FF200R33KF2C

Mfr. #:: FF200R33KF2C
製造商:: Infineon Technologies
描述:: IGBT Modules 3300V 200A DUAL
生命週期:: 製造商新產品
數據表:: FF200R33KF2C 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:
更多信息:: FF200R33KF2C 更多信息

產品屬性
屬性值

製造商：: 英飛凌

產品分類：: IGBT 模塊

RoHS：: N

產品：: IGBT 矽模塊

配置：: 十六進制

集電極-發射極電壓 VCEO 最大值：: 1200 V

集電極-發射極飽和電壓：: 2.15 V

25 C 時的連續集電極電流：: 140 A

柵極-發射極漏電流：: 400 nA

Pd - 功耗：: 480 W

包裝/案例：: EconoPACK 3B

最低工作溫度：: - 40 C

最高工作溫度：: + 125 C

打包：: 托盤

高度：: 17 mm

長度：: 122 mm

寬度：: 62 mm

品牌：: 英飛凌科技

安裝方式：: 底盤安裝

最大柵極發射極電壓：: 20 V

產品類別：: IGBT 模塊

出廠包裝數量：: 10

子類別：: IGBT

商品名：: 戰壕

第 # 部分別名：: FS100R12KE3BOSA1 SP000100416

單位重量：: 10.582189 oz

Tags: FF200R33KF2C, FF200R3, FF200R, FF200, FF20, FF2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FF200R33KF2C 更多信息

FF200R33KF2C IGBT2 IGBT Module: Infineon Technologies FF200R33KF2C IGBT Module offers a collector-emitter voltage of 3300V and a DC-collector current of 330A at 25ºC. The Infineon Technologies FF200R33KF2C IGBT2 Inverter's total power dissipation is 2.20kW and the gate-emitter peak voltage is +/-20V. The inverter is ideal for traction and industry applications.

Market price

型號	製造商	描述	庫存	價格
FF200R33KF2CNOSA1 DISTI # FF200R33KF2CNOSA1-ND	Infineon Technologies AG	IGBT MODULE VCES 1200V 200A RoHS: Not compliant Min Qty: 4 Container: Bulk	Temporarily Out of Stock	4:$791.5000
FF200R33KF2C DISTI # FF200R33KF2C	Infineon Technologies AG	Trans IGBT Module N-CH 3.3KV 330A 8-pin IHV73-3 (Alt: FF200R33KF2C) RoHS: Not Compliant Min Qty: 4	Asia - 0
FF200R33KF2CNOSA1 DISTI # FF200R33KF2CNOSA1	Infineon Technologies AG	TRACTION - Trays (Alt: FF200R33KF2CNOSA1) RoHS: Not Compliant Min Qty: 4 Container: Tray	Americas - 0	4:$866.6900 8:$835.3900 16:$805.1900 24:$778.0900 40:$764.2900
FF200R33KF2CNOSA1 DISTI # 13AC8642	Infineon Technologies AG	IGBT, MODULE, N-CH, 3.3KV, 330A,Transistor Polarity:N Channel,DC Collector Current:330A,Collector Emitter Saturation Voltage Vce(on):3.4V,Power Dissipation Pd:2.2kW,Collector Emitter Voltage V(br)ceo:3.3kV,No. of Pins:- RoHS Compliant: No	0
FF200R33KF2CNOSA1	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 330A I(C), 3300V V(BR)CES, N-Channel RoHS: Not Compliant	2	1000:$824.4700 500:$867.8700 100:$903.5300 25:$942.2600 1:$1,014.7400
FF200R33KF2C DISTI # 641-FF200R33KF2	Infineon Technologies AG	IGBT Modules 3300V 200A DUAL RoHS: Not compliant	0	1:$751.9200 5:$739.9000
FF200R33KF2CNOSA1 DISTI # 2726126	Infineon Technologies AG	IGBT, MODULE, N-CH, 3.3KV, 330A RoHS: Not Compliant	0	1:$1,478.7000 5:$1,425.8900
FF200R33KF2CNOSA1 DISTI # 2726126	Infineon Technologies AG	IGBT, MODULE, N-CH, 3.3KV, 330A RoHS: Not Compliant	0	1:£619.0000 5:£607.0000

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