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IRF630NPBF

IRF630NPBF
Mfr. #:
IRF630NPBF
製造商:
Infineon Technologies
描述:
MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC
生命週期:
製造商新產品
數據表:
IRF630NPBF 數據表
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HTML Datasheet:
IRF630NPBF DatasheetIRF630NPBF Datasheet (P4-P6)IRF630NPBF Datasheet (P7-P9)IRF630NPBF Datasheet (P10-P11)
ECAD Model:
更多信息:
IRF630NPBF 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-220-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
200 V
Id - 連續漏極電流：
9.3 A
Rds On - 漏源電阻：
300 mOhms
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
23.3 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 175 C
Pd - 功耗：
82 W
配置：
單身的
頻道模式：
增強
打包：
管子
高度：
15.65 mm
長度：
10 mm
晶體管類型：
1 N-Channel
寬度：
4.4 mm
品牌：
英飛凌科技
正向跨導 - 最小值：
4.9 S
秋季時間：
15 ns
產品類別：
MOSFET
上升時間：
14 ns
出廠包裝數量：
1000
子類別：
MOSFET
典型關斷延遲時間：
27 ns
典型的開啟延遲時間：
7.9 ns
第 # 部分別名：
SP001564792
單位重量：
0.211644 oz
Tags
IRF630NP, IRF630N, IRF630, IRF63, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.3Ohm;ID 9.3A;TO-220AB;PD 82W;VGS +/-20V
***itex
Transistor: N-MOSFET; unipolar; 200V; 9A; 0.4ohm; 0.57W; -55+150 deg.C; THT; TO220
***ical
Trans MOSFET N-CH Si 200V 9.3A Automotive 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
Single N-Channel 200 V 0.3 Ohm 35 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 36 W
***roFlash
Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, 200V, 9.5A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:200V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:82W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:9.3A; Junction to Case Thermal Resistance A:1.83°C/W; Package / Case:TO-220AB; Power Dissipation Pd:82W; Power Dissipation Pd:82W; Pulse Current Idm:37A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
200-250V HEXFET® Power MOSFETs
Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More
型號 製造商 描述 庫存 價格
IRF630NPBF
DISTI # V36:1790_13890561		Infineon Technologies AGTrans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		2946
  • 1000:$0.3602
  • 500:$0.4242
  • 100:$0.4979
  • 10:$0.6250
  • 1:$0.7082
IRF630NPBF
DISTI # V99:2348_13890561		Infineon Technologies AGTrans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		707
  • 1000:$0.3602
  • 500:$0.4242
  • 100:$0.4979
  • 10:$0.6250
  • 1:$0.7082
IRF630NPBF
DISTI # IRF630NPBF-ND		Infineon Technologies AGMOSFET N-CH 200V 9.3A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		639In Stock
  • 1000:$0.4125
  • 500:$0.5225
  • 100:$0.6738
  • 10:$0.8530
  • 1:$0.9600
IRF630NPBF
DISTI # 21061767		Infineon Technologies AGTrans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		11530
  • 1000:$0.3004
  • 500:$0.3445
  • 100:$0.3877
IRF630NPBF
DISTI # 27128682		Infineon Technologies AGTrans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		2946
  • 1000:$0.3602
  • 500:$0.4242
  • 100:$0.4979
  • 25:$0.6250
IRF630NPBF
DISTI # 30349950		Infineon Technologies AGTrans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		707
  • 500:$0.4242
  • 100:$0.4979
  • 23:$0.6250
IRF630NPBF
DISTI # IRF630NPBF		Infineon Technologies AGTrans MOSFET N-CH 200V 9.3A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF630NPBF)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 1317
  • 1:$0.4849
  • 10:$0.4569
  • 25:$0.4559
  • 50:$0.4539
  • 100:$0.4039
  • 500:$0.3589
  • 1000:$0.3129
IRF630NPBF
DISTI # IRF630NPBF		Infineon Technologies AGTrans MOSFET N-CH 200V 9.3A 3-Pin(3+Tab) TO-220AB (Alt: IRF630NPBF)
RoHS: Compliant
Min Qty: 1000		Asia - 0
    IRF630NPBF
    DISTI # SP001564792    		Infineon Technologies AGTrans MOSFET N-CH 200V 9.3A 3-Pin(3+Tab) TO-220AB (Alt: SP001564792)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 1:€0.4839
    • 10:€0.4519
    • 25:€0.4509
    • 50:€0.4499
    • 100:€0.3989
    • 500:€0.3479
    • 1000:€0.3159
    IRF630NPBF
    DISTI # 63J7338    		Infineon Technologies AGN CHANNEL MOSFET, 200V, 9.3A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:9.3A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.3ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes355
    • 1:$1.0000
    • 10:$0.8600
    • 100:$0.6750
    • 500:$0.6040
    • 1000:$0.4900
    • 2500:$0.4420
    • 10000:$0.4270
    IRF630NPBF.
    DISTI # 26AC0605    		Infineon Technologies AGN CHANNEL MOSFET, 200V, 9.3A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:9.3A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.3ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes0
    • 1:$1.0200
    • 10:$0.8770
    • 100:$0.6890
    • 500:$0.6040
    • 1000:$0.4900
    • 2500:$0.4420
    • 10000:$0.4270
    IRF630NPBF
    DISTI # 70017265    		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 200V,RDS(ON) 0.3Ohm,ID 9.3A,TO-220AB,PD 82W,VGS +/-20V
    RoHS: Compliant    		194
    • 1:$0.8450
    • 10:$0.7450
    • 100:$0.6500
    • 500:$0.5630
    • 1000:$0.4970
    IRF630NPBF
    DISTI # 942-IRF630NPBF    		Infineon Technologies AGMOSFET MOSFT 200V 9.5A 300mOhm 23.3nC
    RoHS: Compliant    		6088
    • 1:$0.8300
    • 10:$0.7000
    • 100:$0.5380
    • 500:$0.4760
    • 1000:$0.3750
    • 2000:$0.3330
    IRF630NPBFInfineon Technologies AGPower Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant    		45
    • 1000:$0.2900
    • 500:$0.3100
    • 100:$0.3200
    • 25:$0.3300
    • 1:$0.3600
    IRF630NPBFInfineon Technologies AGSingle N-Channel 200 V 0.3 Ohm 35 nC HEXFET Power Mosfet - TO-220-3
    RoHS: Compliant    		10757Tube
    • 30:$0.3850
    • 300:$0.3450
    • 1750:$0.2950
    IRF630NPBF
    DISTI # 5430068    		Infineon Technologies AGMOSFET N-CHANNEL 200V 9.3A TO220AB, EA4885
    • 1:£2.0000
    • 20:£0.4300
    • 25:£0.4000
    IRF630NPBF
    DISTI # 9195025    		Infineon Technologies AGMOSFET N-CHANNEL 200V 9.3A TO220AB, TU450
    • 50:£0.4440
    • 250:£0.3770
    • 1000:£0.2970
    • 2500:£0.2640
    IRF630NPBFInternational Rectifier9.3A, 200V, 0.3OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220AB29
    • 28:$0.5000
    • 6:$0.7500
    • 1:$1.0000
    IRF630NPBF
    DISTI # IRF630NPBF    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,200V,9.5A,82W,TO220AB807
    • 1:$0.7900
    • 3:$0.5240
    • 10:$0.4217
    • 100:$0.3603
    IRF630NPBF
    DISTI # IRF630NPBF    		Infineon Technologies AGN-Ch 200V 9,3A 82W 0,3R TO220AB
    RoHS: Compliant    		3000
    • 10:€0.5880
    • 50:€0.3480
    • 200:€0.2880
    • 500:€0.2775
    IRF630NPBFInfineon Technologies AGINSTOCK1748
      IRF630NPBF
      DISTI # XSLY00000000764      		INFINEON/IRTO-220AB
      RoHS: Compliant      		14076
      • 2350:$0.3029
      • 14076:$0.2827
      IRF630NPBF
      DISTI # XSFP00000008771      		Infineon Technologies AGPower Field-Effect Transistor, 13AI(D),30V,0.011ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET,MS-012AA
      RoHS: Compliant      		8518
      • 300:$0.5133
      • 8518:$0.4812
      IRF630NPBF
      DISTI # C1S322000599628      		Infineon Technologies AGTrans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube
      RoHS: Compliant      		3033
      • 1000:$0.3602
      • 500:$0.4242
      • 100:$0.4979
      • 10:$0.6250
      IRF630NPBF
      DISTI # C1S327400157735      		Infineon Technologies AGTrans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube
      RoHS: Compliant      		3950
      • 100:$0.6930
      • 50:$0.7940
      • 10:$1.1800
      • 5:$1.3800
      IRF630NPBF
      DISTI # C1S322000481417      		Infineon Technologies AGTrans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube
      RoHS: Compliant      		11530
      • 1000:$0.4610
      • 500:$0.5020
      • 100:$0.6110
      • 50:$0.6850
      • 25:$0.7540
      • 5:$1.8800
      IRF630NPBF
      DISTI # 8648344      		Infineon Technologies AGMOSFET, N, 200V, 9.5A, TO-220
      RoHS: Compliant      		2509
      • 5:£0.4390
      • 25:£0.4080
      • 100:£0.3970
      • 250:£0.3850
      • 500:£0.3270
      IRF630NPBFInfineon Technologies AG200V,300m,9.3A,N-Channel Power MOSFET800
      • 1:$0.5800
      • 100:$0.4900
      • 500:$0.4300
      • 1000:$0.4200
      IRF630NPBF
      DISTI # 8648344      		Infineon Technologies AGMOSFET, N, 200V, 9.5A, TO-220
      RoHS: Compliant      		2794
      • 1:$1.3800
      • 10:$1.1800
      • 100:$0.8990
      • 500:$0.7950
      • 1000:$0.6270
      • 2000:$0.5570
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      		 全新原裝
      可用性
      庫存:
      Available
      訂購:
      1988
      輸入數量:
      IRF630NPBF的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格（美元）
      數量
      單價
      小計金額
      1
      US$0.82
      US$0.82
      10
      US$0.70
      US$7.00
      100
      US$0.54
      US$53.80
      500
      US$0.48
      US$238.00
      1000
      US$0.38
      US$375.00
      由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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