FDB7045L

Mfr. #:: FDB7045L
製造商:: Rochester Electronics, LLC
描述:: N-CHANNEL LOGIC LEVEL POWERTRENCH&#174, MOSFET - Bulk (Alt: FDB7045L)
生命週期:: 製造商新產品
數據表:: FDB7045L 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

產品屬性
屬性值

Tags: FDB7045L, FDB7045, FDB704, FDB70, FDB7, FDB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDB7045L 描述

*** Source Electronics: N-Channel Logic Level PowerTrench MOSFET / Trans MOSFET N-CH 30V 100A 3-Pin(2+Tab) TO-263AB

***S: French Electronic Distributor since 1988

***ark: MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:100A; On-Resistance, Rds(on):4.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-263; Drain-Source Breakdown Voltage:-55V RoHS Compliant: Yes

***ineon SCT: 40V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS

***ure Electronics: Single N-Channel 40 V 3.3 mOhm 62 nC HEXFET® Power Mosfet - TO-220-3

***p One Stop: Trans MOSFET N-CH Si 40V 123A 3-Pin(3+Tab) TO-220AB Tube

*** Stop Electro: Power Field-Effect Transistor, 120A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N-CH, 40V, 118A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:99W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-220AB; No. of Pins:3; MSL:(Not Applicable); SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C

***ineon: Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: AC-DC; Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull

*** Source Electronics: Trans MOSFET N-CH Si 40V 19A 7-Pin Direct-FET MX T/R / MOSFET N-CH 40V 19A DIRECTFET

***ure Electronics: Single N-Channel 40 V 5 mOhm 29 nC HEXFET® Power Mosfet - DirectFET®

***nell: MOSFET, N-CH, 40V, 106A, DIRECTFET MX-7; Transistor Polarity: N Channel; Continuous Drain Current Id: 106A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0037ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 89W; Transistor Case Style: DirectFET MX; No. of Pins: 7Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:15A; Package/Case:DirectFET MX; Power Dissipation, Pd:89W; Continuous Drain Current - 25 Deg C:19A; Drain Source On Resistance @ 10V:5mohm ;RoHS Compliant: Yes

***ernational Rectifier: A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 106 amperes optimized with low on resistance for applications such as active ORing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number

***(Formerly Allied Electronics): NTD5802NT4G N-channel MOSFET Transistor; 100 A; 40 V; 3-Pin DPAK

***emi: Single N-Channel Power MOSFET 40V, 101A, 4.4mΩ

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:101A; On Resistance Rds(On):0.0044Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V Rohs Compliant: Yes

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a DirectFET ME Package, MG-WDSON-8, RoHS

***ure Electronics: Single N-Channel 60 V 2.9 mOhm 120 nC HEXFET® Power Mosfet - DirectFET®

***ment14 APAC: MOSFET, N-CH, 60V, 114A, DIRECTFET ME; Transistor Polarity:N Channel; Continuous Drain Current Id:114A; Source Voltage Vds:60V; On Resistance

***ineon: Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability

***nell: MOSFET, N-CH, 60V, 114A, DIRECTFET ME; Transistor Polarity: N Channel; Continuous Drain Current Id: 114A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0029ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V; Power Dissipation Pd: 96W; Transistor Case Style: DirectFET ME; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: StrongIRFET, DirectFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***emi: PowerTrench® MOSFET, N-Channel, 30V, 116A, 5.1mΩ

***ark: TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,18A I(D),TO-252AA

***r Electronics: Power Field-Effect Transistor, 35A I(D), 30V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

*** Source Electronics: MOSFET N-CH 30V 28A POWER56 / Trans MOSFET N-CH Si 30V 28A 8-Pin PQFN EP T/R

***emi: N-Channel PowerTrench® MOSFET 30V, 160A, 2.0mΩ

***r Electronics: Power Field-Effect Transistor, 28A I(D), 30V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***el Electronic: Embedded - Microcontrollers 3 (168 Hours) 64-LQFP 48 10K x 8 Internal DMA, LVD, POR, PWM, WDT Surface Mount Tray 32-Bit MCU 32-Bit RX23T RX CISC 128KB Flash 3.3V/5V 64-Pin LFQFP Tray

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

Market price

型號	製造商	描述	庫存	價格
FDB7045L DISTI # FDB7045L	ON Semiconductor	N-CHANNEL LOGIC LEVEL POWERTRENCH&#174,MOSFET - Bulk (Alt: FDB7045L) RoHS: Compliant Min Qty: 90 Container: Bulk	Americas - 0	900:$3.3900 270:$3.4900 450:$3.4900 90:$3.5900 180:$3.5900
FDB7045L DISTI # 512-FDB7045L	ON Semiconductor	MOSFET N-Ch PowerTrench Logic Level RoHS: Compliant	0
FDB7045L	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 75A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	123658	1000:$3.6800 500:$3.8800 100:$4.0400 25:$4.2100 1:$4.5300
FDB7045L	Fairchild Semiconductor Corporation		2261	3:$2.1000 11:$1.5750 33:$1.3125 116:$0.7875 382:$0.7350 1022:$0.6930
FDB7045L	Fairchild Semiconductor Corporation		399
FDB7045L	Fairchild Semiconductor Corporation	MOSFET Transistor, N-Channel, TO-263AB	7	3:$1.8500 1:$2.2200
FDB7045L	Freescale Semiconductor	MOSFET Transistor, N-Channel, TO-263AB	324	307:$0.9100 144:$0.9800 1:$2.8000
FDB7045L	Fairchild Semiconductor Corporation	MOSFET Transistor, N-Channel, TO-263AB	80	47:$0.9750 14:$1.6250 1:$2.6000

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