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IPL65R1K5C6SATMA1

IPL65R1K5C6SATMA1
Mfr. #:
IPL65R1K5C6SATMA1
製造商:
Infineon Technologies
描述:
MOSFET N-Ch 650V 3A ThinPAK 5x6
生命週期:
製造商新產品
數據表:
IPL65R1K5C6SATMA1 數據表
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更多信息:
IPL65R1K5C6SATMA1 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
ThinPAK-56-8
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
650 V
Id - 連續漏極電流：
3 A
Rds On - 漏源電阻：
1.5 Ohms
Vgs th - 柵源閾值電壓：
3 V
Vgs - 柵源電壓：
30 V
Qg - 門電荷：
11 nC
最低工作溫度：
- 40 C
最高工作溫度：
+ 150 C
Pd - 功耗：
26.6 W
配置：
單身的
商品名：
酷摩
打包：
捲軸
高度：
1.1 mm
長度：
6 mm
系列：
CoolMOS C6
晶體管類型：
1 N-Channel
寬度：
5 mm
品牌：
英飛凌科技
秋季時間：
18.2 ns
產品類別：
MOSFET
上升時間：
5.9 ns
出廠包裝數量：
5000
子類別：
MOSFET
典型關斷延遲時間：
33 ns
典型的開啟延遲時間：
7.7 ns
第 # 部分別名：
IPL65R1K5C6S SP001163086
單位重量：
0.002677 oz
Tags
IPL65R1K, IPL65R1, IPL65R, IPL65, IPL6, IPL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 3A 8-Pin Thin-PAK EP T/R
***ineon SCT
The new CoolMOS™ ThinPAK 5x6 is a leadless SMD package especially designed for high voltage MOSFETs, PG-TSON-8, RoHS
***et
MOS Power Transistors HV (>= 200V)
***ineon
The new CoolMOS ThinPAK 5x6 is a leadless SMD package especially designed for high voltage MOSFETs. This new package has a very small footprint of 5x6mm 2 and a very low profile with only 1mm height. | Summary of Features: Small footprint (5x6mm); Low profile (1mm); Low parasitic inductance; RoHS compliant; Halogen free mold compound | Benefits: Reduced board space consumption; Increased power density; Short commutation loop; Easy to use products; Environmentally friendly | Target Applications: Adapter; Consumer; Lighting
*** Electronics
Transistor: N-MOSFET; unipolar; 650V; 2.8A; 28.4W; PG-TO252-3
***ineon SCT
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
***ure Electronics
Single N-Channel 500 V 1.4 Ohm 8.2 nC OptiMOS™ Power Mosfet - DPAK
*** Stop Electro
Power Field-Effect Transistor, 4.8A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***nell
MOSFET, N-CH, 500V, 3.1A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.1A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 1.26ohm; Rds(on) Test Voltage Vgs: 13V; Threshold Voltage Vgs: 3V; P
***ineon SCT
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards, PG-TO252-3, RoHS
***ineon
500V CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. | Summary of Features: Reduced energy stored in output capacitance (E oss); High body diode ruggedness; Reduced reverse recovery charge (Q rr ); Reduced gate charge (Q g ) | Benefits: Easy control of switching behavior; Better light load efficiency compared to previous CoolMOS generations; Cost attractive alternative compared to standard MOSFETs; Outstanding quality and reliability of CoolMOS technology | Target Applications: Consumer; Lighting; PC silverbox
***ical
Trans MOSFET N-CH 600V 3A 8-Pin Thin-PAK EP T/R
***ark
Mosfet, N-Ch, 600V, 3A, Smd; Transistor Polarity:n Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:600V; On Resistance Rds(On):1.35Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes
***ineon
The new CoolMOS ThinPAK 5x6 is a leadless SMD package especially designed for high voltage MOSFETs. This new package has a very small footprint of 5x6mm 2 and a very low profile with only 1mm height. | Summary of Features: Small footprint (5x6mm); Low profile (1mm); Low parasitic inductance; RoHS compliant; Halogen free mold compound | Benefits: Reduced board space consumption; Increased power density; Short commutation loop; Easy to use products; Environmentally friendly | Target Applications: Adapter; Consumer; Lighting
***emi
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 3.9 A, 1.2 Ω, DPAK
***ure Electronics
N-Channel 600 V 3.9 A 1.2 Ohm Surface Mount SuperFET® Mosfet - TO-252-3
***ment14 APAC
MOSFET, N, 600V, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:50W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-252; Current Id Max:3.9A; On State Resistance Max:1.2ohm; Package / Case:DPAK; Power Dissipation Pd:50W; Power Dissipation Pd:50W; Pulse Current Idm:11.7A; Termination Type:SMD; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***icroelectronics
N-channel 600 V, 1.3 Ohm typ., 3.5 A MDmesh M2 Power MOSFET in DPAK package
***ure Electronics
N-Channel 600 V 3.5 A 1.4 Ohm Surface Mount MDmesh II Plus Mosfet - DPAK
***r Electronics
Power Field-Effect Transistor, 3.5A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***et Europe
Trans MOSFET N-CH 700V 3.9A 3-Pin TO-252 T/R
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 700V VDS, 30±V VGS,
*** Stop Electro
Power Field-Effect Transistor, 3.9A I(D), 700V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
型號 製造商 描述 庫存 價格
IPL65R1K5C6SATMA1
DISTI # V72:2272_06384406		Infineon Technologies AGTrans MOSFET N-CH 650V 3A 8-Pin Thin-PAK EP T/R
RoHS: Compliant		0
    IPL65R1K5C6SATMA1
    DISTI # V36:1790_06384406    		Infineon Technologies AGTrans MOSFET N-CH 650V 3A 8-Pin Thin-PAK EP T/R
    RoHS: Compliant    		0
    • 5000000:$0.4071
    • 2500000:$0.4074
    • 500000:$0.4279
    • 50000:$0.4632
    • 5000:$0.4691
    IPL65R1K5C6SATMA1
    DISTI # IPL65R1K5C6SATMA1-ND    		Infineon Technologies AGMOSFET N-CH 8TSON
    RoHS: Compliant
    Min Qty: 5000
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 5000:$0.4691
    IPL65R1K5C6SATMA1
    DISTI # IPL65R1K5C6SATMA1    		Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Tape and Reel (Alt: IPL65R1K5C6SATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel    		Americas - 0
    • 50000:$0.4259
    • 30000:$0.4339
    • 20000:$0.4489
    • 10000:$0.4659
    • 5000:$0.4839
    IPL65R1K5C6SATMA1
    DISTI # SP001163086    		Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: SP001163086)
    RoHS: Compliant
    Min Qty: 5000    		Europe - 0
    • 50000:€0.3989
    • 30000:€0.4299
    • 20000:€0.4659
    • 10000:€0.5079
    • 5000:€0.6209
    IPL65R1K5C6SATMA1
    DISTI # 726-IPL65R1K5C6SATMA    		Infineon Technologies AGMOSFET N-Ch 650V 3A ThinPAK 5x6
    RoHS: Compliant    		5113
    • 1:$1.1000
    • 10:$0.9410
    • 100:$0.7230
    • 500:$0.6390
    • 1000:$0.5040
    • 5000:$0.4470
    • 10000:$0.4300
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    可用性
    庫存:
    Available
    訂購:
    1988
    輸入數量:
    IPL65R1K5C6SATMA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$1.10
    US$1.10
    10
    US$0.94
    US$9.41
    100
    US$0.72
    US$72.30
    500
    US$0.64
    US$319.50
    1000
    US$0.50
    US$504.00
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