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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| FZ1600R17KE3B2NOSA1 DISTI # V36:1790_18208823 | Infineon Technologies AG | IGBT Module | 0 | |
| FZ1600R17KE3B2NOSA1 DISTI # FZ1600R17KE3B2NOSA1-ND | Infineon Technologies AG | IGBT MODULE 1700V 1600A RoHS: Compliant Min Qty: 2 Container: Tray | Limited Supply - Call | |
| FZ1600R17KE3B2NOSA1 DISTI # FZ1600R17KE3B2NOSA1 | Infineon Technologies AG | TRACTION - Trays (Alt: FZ1600R17KE3B2NOSA1) RoHS: Not Compliant Min Qty: 2 Container: Tray | Americas - 0 | |
| FZ1600R17KE3_B2 DISTI # 641-FZ1600R17KE3_B2 | Infineon Technologies AG | IGBT Modules N-CH 1.7KV 2.4KA | 4 |
|
| 1SD536F2-FZ1600R17KE3_B2 DISTI # 869-1SD536F2-FZ16KE3 | Power Integrations | Power Management Modules 1SD536F2 PI Gate Driver ONLY RoHS: Not compliant | 0 |
|
| 1SD536F2-FZ1600R17KE3_B2_Opt1 DISTI # 869-1SD536F2-FZ16O1 | Power Integrations | Power Management Modules 1SD536F2 PI Gate Driver ONLY RoHS: Not compliant | 0 | |
| FZ1600R17KE3_B2-HPFM DISTI # AS0000000000205 | AgileSwitch | Gate Driver for Infineon P# FZ1600R17KE3_B2, 1700V,1600A RoHS: Compliant | 0 in Stock0 on Order |
|
| 1SD536F2-FZ1600R17KE3_B2 DISTI # 1SD536F2-FZKE3B | Power Integrations | PLUG-AND-PLAY IGBT DRIVER RoHS: Not Compliant | 0 |
|
| 圖片 | 型號 | 描述 |
|---|---|---|
|
Mfr.#: FZ1600R17HP4 OMO.#: OMO-FZ1600R17HP4 |
IGBT Modules IGBT 1700V 1600A |
|
|
Mfr.#: FZ1600R17HP4_B21 OMO.#: OMO-FZ1600R17HP4-B21 |
IGBT Modules |
|
|
Mfr.#: FZ1600R17KF6C_B2 OMO.#: OMO-FZ1600R17KF6C-B2-125 |
IGBT Modules N-CH 1.7KV 2.6KA |
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Mfr.#: FZ1600R17KE3 OMO.#: OMO-FZ1600R17KE3-125 |
IGBT Modules N-CH 1.7KV 2.3KA |
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Mfr.#: FZ1600R17HP4 OMO.#: OMO-FZ1600R17HP4-125 |
IGBT Modules IGBT 1700V 1600A |
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|
Mfr.#: FZ1600R17HP4B2BOSA2 |
IGBT MODULE 1700V 1600A |
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|
Mfr.#: FZ1600R17KE3NOSA1 |
Trench and Field Stop IGBT4un |
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Mfr.#: FZ1600R17KF6CB2NOSA1 |
1700V IGBT Module With Low Loss IGBT |
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|
Mfr.#: FZ1600R17HP4-HPFM OMO.#: OMO-FZ1600R17HP4-HPFM-1190 |
Gate Driver for Infineon P# FZ1600R17HP4, 1700V,1600A |
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Mfr.#: FZ1600R12KE3NOSA1 OMO.#: OMO-FZ1600R12KE3NOSA1-1190 |
Insulated Gate Bipolar Transistor, 2300A I(C), 1200V V(BR)CES, N-Channel |