A3G35H100-04SR3

Mfr. #:: A3G35H100-04SR3
製造商:: NXP Semiconductors
描述:: RF MOSFET Transistors Airfast RF Power GaN Transistor, 3400-3600 MHz, 14 W Avg., 48 V
生命週期:: 製造商新產品
數據表:: A3G35H100-04SR3 數據表
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更多信息:: A3G35H100-04SR3 更多信息 A3G35H100-04SR3 Product Details

產品屬性
屬性值

製造商：: 恩智浦

產品分類：: 射頻 MOSFET 晶體管

RoHS：: Y

晶體管極性：: 雙 N 通道

技術：: 矽

Id - 連續漏極電流：: 8.04 mA

Vds - 漏源擊穿電壓：: 125 V

獲得：: 14 dB

輸出功率：: 14 W

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

安裝方式：: 貼片/貼片

包裝/案例：: NI-780S-4L

打包：: 捲軸

工作頻率：: 3400 MHz to 3600 MHz

類型：: 射頻功率MOSFET

品牌：: 恩智浦半導體

通道數：: 2 Channel

產品類別：: 射頻 MOSFET 晶體管

出廠包裝數量：: 250

子類別：: MOSFET

Vgs - 柵源電壓：: - 8 V

Vgs th - 柵源閾值電壓：: - 2.3 V

第 # 部分別名：: 935368927128

Tags: A3G

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

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Packaging Boxes

A3G35H100-04SR3 更多信息

Airfast® Third-Generation Power Amplifiers: NXP Semiconductors Airfast® Third-Generation Power Amplifiers provide the best in class performance for the critical parameters that include efficiency, gain, RF power, and signal bandwidth. The Airfast third-generation technology reduces the footprint required to deliver specific RF output power. These amplifiers include 28V and 48V LDMOS transistors. The Airfast third-generation amplifiers are designed for the asymmetrical Doherty amplifier architectures. These amplifiers feature high efficiency, reduced solution size, thermal performance, and operate at wideband frequency. The Airfast third-generation amplifiers support all global cellular standards including LTE and NR for 5G. These amplifiers reduce both the size of cellular base stations and the installation costs.

RF Power GaN Portfolio: NXP Semiconductors RF Power Gallium Nitride (GaN) Portfolio provides state of the art linearizability and RF performance that enables 5G deployment. These transistors offer solutions for cellular infrastructure, defense, and industrial markets. The GaN transistors provide wideband performance and high-frequency operation. These transistors feature end-to-end applications, solution support, and high-volume production. The GaN transistors come with advanced GaN on SiC technology that offers high power density. These transistors are designed for cellular base station applications.

Market price

型號	製造商	描述	庫存	價格
A3G35H100-04SR3 DISTI # A3G35H100-04SR3	Avnet, Inc.	Trans RF FET 125VDC 4-Pin NI-780S T/R - Tape and Reel (Alt: A3G35H100-04SR3) RoHS: Compliant Min Qty: 250 Container: Reel	Americas - 0	2500:$46.6900 1500:$47.5900 1000:$49.3900 500:$51.3900 250:$53.4900
A3G35H100-04SR3 DISTI # 58AC6127	NXP Semiconductors	AIRFAST RF POWER GAN TRANSISTOR, 3400-3600 MHZ, 14 W AVG., 48 V TR	0	100:$45.9400 50:$48.8800 25:$49.6200 10:$50.3500 5:$51.8200 1:$53.2900
A3G35H100-04SR3 DISTI # 771-A3G35H100-04SR3	NXP Semiconductors	RF MOSFET Transistors A3G35H100-04S/CFM4F///REEL 13 Q2 NDP RoHS: Compliant	0	250:$49.6200
A3G35H100-04SR3 DISTI # A3G35H100-04SR3	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	0	250:$55.1200