QPD1000

Mfr. #:: QPD1000
製造商:: Qorvo
描述:: RF JFET Transistors 50-1000MHz 15W 28V SSG 19dB GaN
生命週期:: 製造商新產品
數據表:: QPD1000 數據表
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更多信息:: QPD1000 更多信息

產品屬性
屬性值

製造商：: 科沃

產品分類：: 射頻 JFET 晶體管

RoHS：: Y

晶體管類型：: HEMT

技術：: 氮化鎵碳化矽

獲得：: 19 dB

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 28 V

Vgs - 柵源擊穿電壓：: 100 V

Id - 連續漏極電流：: 817 mA

輸出功率：: 24 W

最低工作溫度：: - 40 C

最高工作溫度：: + 85 C

Pd - 功耗：: 28.8 W

安裝方式：: 貼片/貼片

包裝/案例：: QFN-8

打包：: 托盤

配置：: 單身的

工作頻率：: 30 MHz to 1.215 GHz

工作溫度範圍：: - 40 C to + 85 C

系列：: QPD

品牌：: 科沃

開發套件：: QPD1000PCB401, QPD1000PCB402

濕氣敏感：: 是的

產品類別：: 射頻 JFET 晶體管

出廠包裝數量：: 100

子類別：: 晶體管

Vgs th - 柵源閾值電壓：: - 2.8 V

第 # 部分別名：: 1131140

Tags: QPD100, QPD10, QPD1, QPD

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

QPD1000 描述

***W: RF Power Transistor, .03- 1.215 GHz, 15W, 28 V, GaN

QPD1000 更多信息

QPD GaN RF Transistors: Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

Market price

型號	製造商	描述	庫存	價格
QPD1000 DISTI # 772-QPD1000	Qorvo	RF JFET Transistors 50-1000MHz 15W 28V SSG 19dB GaN RoHS: Compliant	524	1:$58.0000 25:$51.0000 100:$45.0000
QPD1000PCB4B01 DISTI # 772-QPD1000EB1	Qorvo	RF Development Tools QPD1000 50-1000MHz Eval Board RoHS: Compliant	3	1:$875.0000
QPD1000PCB4B02 DISTI # 772-QPD1000EB2	Qorvo	RF Development Tools QPD1000 200-1200MHz Eval Board RoHS: Compliant	2	1:$875.0000

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