STL23NM60ND

Mfr. #:: STL23NM60ND
製造商:: STMicroelectronics
描述:: MOSFET N-CH 600V 19.5A POWERFLAT
生命週期:: 製造商新產品
數據表:: STL23NM60ND 數據表
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更多信息:: STL23NM60ND 更多信息 STL23NM60ND Product Details

產品屬性
屬性值

製造商: 英石

產品分類: FET - 單

系列: N 通道 MDmesh

打包: 捲軸

安裝方式: 貼片/貼片

包裝盒: PowerFlat-8

技術: 矽

通道數: 1 Channel

晶體管型: 1 N-Channel

鈀功耗: 3 W

秋季時間: 40 ns

上升時間: 45 ns

VGS-柵極-源極-電壓: 25 V

Id 連續漏極電流: 19.5 A

Vds-漏-源-擊穿電壓: 600 V

VGS-th-Gate-Source-Threshold-Voltage: 4 V

Rds-On-Drain-Source-Resistance: 150 mOhms

晶體管極性: N通道

Qg-門電荷: 70 nC

Tags: STL23NM, STL23, STL2, STL

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STL23NM60ND 描述

***ical: Trans MOSFET N-CH 600V 19.5A 5-Pin Power Flat T/R

***i-Key: MOSFET N-CH 600V 19.5A POWERFLAT

***ark: Mosfet, N Ch, 600V, 19.5A, Powerflat; Transistor Polarity:n Channel; Continuous Drain Current Id:19.5A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.15Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N CH, 600V, 19.5A, POWERFLAT; Transistor Polarity:N Channel; Continuous Drain Current Id:19.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:150W; Transistor Case Style:PowerFLAT; No. of Pins:5Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 3 - 168 hours; SVHC:No SVHC (17-Dec-2015)

***nell: MOSFET, CANALE N, 600V, 19.5A, POWERFLAT; Polarità Transistor:Canale N; Corrente Continua di Drain Id:19.5A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.15ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:150W; Modello Case Transistor:PowerFLAT; No. di Pin:5Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 3 - 168 ore; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (17-Dec-2015)

Market price

型號	製造商	描述	庫存	價格
STL23NM60ND DISTI # 497-11205-2-ND	STMicroelectronics	MOSFET N-CH 600V 19.5A POWERFLAT RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
STL23NM60ND DISTI # 497-11205-1-ND	STMicroelectronics	MOSFET N-CH 600V 19.5A POWERFLAT RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
STL23NM60ND DISTI # 497-11205-6-ND	STMicroelectronics	MOSFET N-CH 600V 19.5A POWERFLAT RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
STL23NM60ND DISTI # 511-STL23NM60ND	STMicroelectronics	MOSFET N-Ch 600V 0.150 Ohm 19.5 A Fdmesh II RoHS: Compliant	0
STL23NM60ND DISTI # 2098279	STMicroelectronics	MOSFET, N CH, 600V, 19.5A, POWERFLAT RoHS: Compliant	0	1:£6.6600 10:£5.2800 100:£4.5800 250:£4.3800 500:£3.9900

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