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SIA417DJ-T1-GE3

SIA417DJ-T1-GE3
Mfr. #:
SIA417DJ-T1-GE3
製造商:
Vishay / Siliconix
描述:
MOSFET RECOMMENDED ALT 78-SIA427ADJ-T1-GE3
生命週期:
製造商新產品
數據表:
SIA417DJ-T1-GE3 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIA417DJ-T1-GE3 DatasheetSIA417DJ-T1-GE3 Datasheet (P4-P6)SIA417DJ-T1-GE3 Datasheet (P7)
ECAD Model:
產品屬性
屬性值
製造商：
威世
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
PowerPAK-SC70-6
商品名：
溝槽場效應晶體管
打包：
捲軸
高度：
0.75 mm
長度：
2.05 mm
系列：
新航
寬度：
2.05 mm
品牌：
威世 / Siliconix
產品類別：
MOSFET
出廠包裝數量：
3000
子類別：
MOSFET
第 # 部分別名：
SIA417DJ-GE3
單位重量：
0.070548 oz
Tags
SIA417, SIA41, SIA4, SIA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET P-CH 8V 12A 6-Pin PowerPAK SC-70 T/R
***nell
P CHANNEL MOSFET, -8V, 12A, SC-70
***i-Key
MOSFET P-CH 8V 12A SC70-6
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:-12000mA; Drain Source Voltage, Vds:-8V; On Resistance, Rds(on):0.095ohm; Rds(on) Test Voltage, Vgs:5V; Threshold Voltage, Vgs Typ:-1V; Power Dissipation, Pd:3.5W ;RoHS Compliant: Yes
***ment14 APAC
P CHANNEL MOSFET, -8V, 12A, SC-70; Trans; P CHANNEL MOSFET, -8V, 12A, SC-70; Transistor Polarity:P Channel; Continuous Drain Current Id:-12A; Drain Source Voltage Vds:-8V; On Resistance Rds(on):95mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:-1V; No. of Pins:6
型號 製造商 描述 庫存 價格
SIA417DJ-T1-GE3
DISTI # SIA417DJ-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 8V 12A SC70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    SIA417DJ-T1-GE3
    DISTI # SIA417DJ-T1-GE3CT-ND    		Vishay SiliconixMOSFET P-CH 8V 12A SC70-6
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      SIA417DJ-T1-GE3
      DISTI # SIA417DJ-T1-GE3DKR-ND      		Vishay SiliconixMOSFET P-CH 8V 12A SC70-6
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        SIA417DJ-T1-GE3
        DISTI # 781-SIA417DJ-T1-GE3        		Vishay IntertechnologiesMOSFET 8.0V 12A 19W 23mohm @ 4.5V
        RoHS: Compliant        		0
          SIA417DJ-T1-GE3Vishay SiliconixPOWER FIELD-EFFECT TRANSISTOR, 12A I(D), 8V, 0.023OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET2895
          • 2561:$0.2750
          • 572:$0.3125
          • 1:$1.0000
          圖片 型號 描述
          SIA417DJ-T1-GE3

          Mfr.#: SIA417DJ-T1-GE3

          OMO.#: OMO-SIA417DJ-T1-GE3

          		 MOSFET RECOMMENDED ALT 78-SIA427ADJ-T1-GE3
          SIA417DJ-T1-GE3

          Mfr.#: SIA417DJ-T1-GE3

          OMO.#: OMO-SIA417DJ-T1-GE3-VISHAY

          		 IGBT Transistors MOSFET 8.0V 12A 19W 23mohm @ 4.5V
          SIA417DJ-T1

          Mfr.#: SIA417DJ-T1

          OMO.#: OMO-SIA417DJ-T1-1190

          		 全新原裝
          SIA417DJ-T1-E3

          Mfr.#: SIA417DJ-T1-E3

          OMO.#: OMO-SIA417DJ-T1-E3-1190

          		 MOSFET RECOMMENDED ALT 78-SIA427ADJ-T1-GE3
          可用性
          庫存:
          Available
          訂購:
          3500
          輸入數量:
          SIA417DJ-T1-GE3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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