NDPL070N10BG

Mfr. #:: NDPL070N10BG
製造商:: ON Semiconductor
描述:: MOSFET N-CH 100V 70A TO220-3
生命週期:: 製造商新產品
數據表:: NDPL070N10BG 數據表
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ECAD Model:

產品屬性
屬性值

製造商: 安森美半導體

產品分類: 晶體管 - FET、MOSFET - 單

打包: 管子

單位重量: 0.211644 oz

安裝方式: 通孔

包裝盒: TO-220-3

技術: 矽

通道數: 1 Channel

配置: 單身的

鈀功耗: 72 W

最高工作溫度: + 175 C

最低工作溫度: - 55 C

秋季時間: 40 ns

上升時間: 180 ns

VGS-柵極-源極-電壓: +/- 20 V

Id 連續漏極電流: 70 A

Vds-漏-源-擊穿電壓: 100 V

VGS-th-Gate-Source-Threshold-Voltage: 2 V

Rds-On-Drain-Source-Resistance: 12.8 mOhms

晶體管極性: N通道

典型關斷延遲時間: 55 ns

典型開啟延遲時間: 30 ns

Qg-門電荷: 26 nC

通道模式: 增強

Tags: NDPL, NDP

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NDPL070N10BG 描述

***ark: Mosfet Transistor, N Channel, 70 A, 100 V, 0.009 Ohm, 15 V, 4 V

***emi: Power MOSFET, N-Channel, 100 V, 70 A, 10.8 mΩ

***ical: Trans MOSFET N-CH 100V 70A 3-Pin(3+Tab) TO-220 Tube

***nell: MOSFET, N-CH, 100V, 70A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 70A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.009ohm; Rds(on) Test Voltage Vgs: 15V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 72W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018)

***ure Electronics: Single N-Channel 75 V 8.4 mOhm 73 nC HEXFET® Power Mosfet - TO-220-3

***Yang: Trans MOSFET N-CH 75V 76A 3-Pin TO-220 Tube - Rail/Tube

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:76A; On Resistance Rds(On):0.0084Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V; Msl:- Rohs Compliant: Yes

***ineon: Benefits: Improved gate, avalanche and dynamic dV/dt ruggedness; Fully characterized capacitance and avalanche SOA; Enhanced body diode dV/dt and dI/dt capability; Lead-free, RoHS compliant; StrongIRFET

***et: Trans MOSFET N-CH 100V 60A 3-Pin(3+Tab) TO-220AB

***i-Key: MOSFET N-CH 100V 60A TO220AB

***nell: N CHANNEL MOSFET, 100V, 60A; Transistor; N CHANNEL MOSFET, 100V, 60A; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 18.3mohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; No. of Pins: 3

***peria: PSMN8R5-100XS - N-channel 100V 8.5 mΩ standard level MOSFET in TO220F (SOT186A)

***et: Trans MOSFET N-CH 100V 49A 3-Pin(3+Tab) TO-220F Rail

*** Electronics: MOSFET PSMN8R5-100XS/TO-220F/RAILH

***el Electronic: IC DRVR HALF BRIDGE TRPL 14-SOIC

*** Americas: STANDARD MARKING * HORIZONTAL, RAIL PACK

***ure Electronics: Single N-Channel 75 V 10.6 mOhm 55 nC HEXFET® Power Mosfet - TO-220-3

***p One Stop: Trans MOSFET N-CH 75V 59A 3-Pin(3+Tab) TO-220AB Tube

***trelec: MOSFET Operating temperature: -55...+175 °C Housing type: TO-220AB Polarity: N Power dissipation: 99 W

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 59A I(D), 75V, 0.0106ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N-CH, 75V, 59A, TO-220AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 59A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0106ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V;

***ineon: Benefits: Improved gate, avalanche and dynamic dV/dt ruggedness; Fully characterized capacitance and avalanche SOA; Enhanced body diode dV/dt and dI/dt capability; Lead-free, RoHS compliant; StrongIRFET

***icroelectronics: N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in TO-220FP package

***ure Electronics: N channel 75 V 11 mOhm Flange Mount StripFET II Power Mosfet - TO-220FP

***ical: Trans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220FP Tube

***ponent Stockers USA: 80 A 75 V 0.011 ohm N-CHANNEL Si POWER MOSFET TO-220AB

***nell: MOSFET, N-CH, 75V, 80A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0095ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Pow

***r Electronics: Power Field-Effect Transistor, 80A I(D), 75V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ure Electronics: Single N-Channel 100 V 11.6 mOhm 51 nC OptiMOS Power Mosfet - TO-220-3

***ineon SCT: 100V, N-Ch, 12.1 mΩ max, Automotive MOSFET, TO-220, OptiMOS™-T, PG-TO220-3, RoHS

***ical: Trans MOSFET N-CH 100V 70A Automotive 3-Pin(3+Tab) TO-220 Tube

*** Stop Electro: Power Field-Effect Transistor, 70A I(D), 100V, 0.0116ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); 100% Avalanche tested | Benefits: highest current capability 180A; low switching and conduction power losses for high thermal efficiency; robust packages with superior quality and reliability; optimized total gate charge enables smaller driver output stages | Target Applications: 48V inverter; 48V DC/DC; HID lighting

Market price

型號	製造商	描述	庫存	價格
NDPL070N10BG DISTI # V99:2348_14070697	ON Semiconductor	Trans MOSFET N-CH 100V 70A 3-Pin(3+Tab) TO-220 Tube	890	1:$0.9056
NDPL070N10BG DISTI # NDPL070N10BGOS-ND	ON Semiconductor	MOSFET N-CH 100V 70A TO220-3 RoHS: Compliant Min Qty: 400 Container: Tube	Limited Supply - Call
NDPL070N10BG DISTI # 25887314	ON Semiconductor	Trans MOSFET N-CH 100V 70A 3-Pin(3+Tab) TO-220 Tube	890	12:$0.6475
NDPL070N10BG DISTI # 863-NDPL070N10BG	ON Semiconductor	MOSFET NCH 70A 100V Power M RoHS: Compliant	0
NDPL070N10BG	ON Semiconductor	RoHS: Not Compliant	2236	1000:$0.6100 500:$0.6400 100:$0.6600 25:$0.6900 1:$0.7500
NDPL070N10BG DISTI # 2508374	ON Semiconductor	MOSFET, N-CH, 100V, 70A, TO-220-3 RoHS: Compliant	0	1:$2.1100 10:$1.8100 100:$1.2400 500:$1.0100 1000:$0.8440 2500:$0.7680 10000:$0.7340 25000:$0.7240
NDPL070N10BG DISTI # C1S541901333098	ON Semiconductor	MOSFETs	890	1:$0.8020