SI7102DN-T1-GE3

Mfr. #:: SI7102DN-T1-GE3
製造商:: Vishay
描述:: MOSFET N-CH 12V 35A 1212-8
生命週期:: 製造商新產品
數據表:: SI7102DN-T1-GE3 數據表
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ECAD Model:

產品屬性
屬性值

製造商: 威世矽

產品分類: FET - 單

系列: 溝槽FETR

打包: Digi-ReelR 替代包裝

部分別名: SI7102DN-GE3

安裝方式: 貼片/貼片

包裝盒: PowerPAKR 1212-8

技術: 矽

工作溫度: -50°C ~ 150°C (TJ)

安裝型: 表面貼裝

通道數: 1 Channel

供應商-設備-包: PowerPAKR 1212-8

配置: 單身的

FET型: MOSFET N 溝道，金屬氧化物

最大功率: 52W

晶體管型: 1 N-Channel

漏源電壓 Vdss: 12V

輸入電容-Ciss-Vds: 3720pF @ 6V

FET-Feature: 標準

Current-Continuous-Drain-Id-25°C: 35A (Tc)

Rds-On-Max-Id-Vgs: 3.8 mOhm @ 15A, 4.5V

Vgs-th-Max-Id: 1V @ 250μA

柵極電荷-Qg-Vgs: 110nC @ 8V

鈀功耗: 3.8 W

最高工作溫度: + 150 C

最低工作溫度: - 50 C

秋季時間: 12 ns

上升時間: 125 ns

VGS-柵極-源極-電壓: 8 V

Id 連續漏極電流: 25 A

Vds-漏-源-擊穿電壓: 12 V

VGS-th-Gate-Source-Threshold-Voltage: 1 V

Rds-On-Drain-Source-Resistance: 3.8 mOhms

晶體管極性: N通道

典型關斷延遲時間: 53 ns

典型開啟延遲時間: 27 ns

Qg-門電荷: 73 nC

通道模式: 增強

Tags: SI7102, SI710, SI71, SI7

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7102DN-T1-GE3 描述

***ure Electronics: Single N-Channel 12 V 0.0038 O 110 nC SMT Power Mosfet - PowerPAK-1206-8

***ark: Mosfet, N Channel, 12V, 35A, Powerpak 1212-8, Full Reel; Transistor Polarity:n Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:35A; On Resistance Rds(On):0.0031Ohm; Transistor Mounting:surface Mount Rohs Compliant: Yes

***nell: MOSFET, N CH, 12V, 35A, POWERPAK 1212; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:12V; On Resistance Rds(on):0.0031ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:52W; Operating Temperature Min:-50°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:-

Market price

型號	製造商	描述	庫存	價格
SI7102DN-T1-GE3 DISTI # V72:2272_09215602	Vishay Intertechnologies	Trans MOSFET N-CH 12V 25A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	142	100:$1.0144 25:$1.2147 10:$1.2196 1:$1.3855
SI7102DN-T1-GE3 DISTI # SI7102DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 12V 35A 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	6000In Stock	3000:$0.9059
SI7102DN-T1-GE3 DISTI # SI7102DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 12V 35A 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2879In Stock	1000:$1.0021 500:$1.2095 100:$1.5550 10:$1.9350 1:$2.1400
SI7102DN-T1-GE3 DISTI # SI7102DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 12V 35A 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SI7102DN-T1-GE3 DISTI # 29754142	Vishay Intertechnologies	Trans MOSFET N-CH 12V 25A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	3000	3000:$0.9546
SI7102DN-T1-GE3 DISTI # 25789860	Vishay Intertechnologies	Trans MOSFET N-CH 12V 25A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	142	100:$1.0144 25:$1.2147 12:$1.2196
SI7102DN-T1-GE3 DISTI # SI7102DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 12V 25A 8-Pin PowerPAK 1212 T/R (Alt: SI7102DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SI7102DN-T1-GE3 DISTI # SI7102DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 12V 25A 8-Pin PowerPAK 1212 T/R (Alt: SI7102DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€1.5179 6000:€1.0639 12000:€0.8769 18000:€0.7789 30000:€0.7369
SI7102DN-T1-GE3 DISTI # 05W6953	Vishay Intertechnologies	MOSFET, N CHANNEL, 12V, 35A, POWERPAK 1212-8,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:12V,On Resistance Rds(on):3.1mohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:400mV , RoHS Compliant: Yes	0	1:$1.9000 25:$1.5800 50:$1.4000 100:$1.2200 250:$1.1500 500:$1.0700 1000:$1.0200
SI7102DN-T1-GE3. DISTI # 28AC2159	Vishay Intertechnologies	N-CHANNEL 12-V (D-S) MOSFET , ROHS COMPLIANT: YES	0
SI7102DN-T1-GE3 DISTI # 781-SI7102DN-T1-GE3	Vishay Intertechnologies	MOSFET 12V Vds 8V Vgs PowerPAK 1212-8 RoHS: Compliant	2110	1:$1.9000 10:$1.5800 100:$1.2200 500:$1.0700 1000:$1.0200
SI7102DN-T1-GE3	Vishay Intertechnologies	MOSFET 12V Vds 8V Vgs PowerPAK 1212-8 RoHS: Compliant	Americas - 18000
SI7102DN-T1-GE3 DISTI # 2335346	Vishay Intertechnologies	MOSFET, N CH, 12V, 35A, POWERPAK 1212 RoHS: Compliant	287	1:$3.0100 10:$2.5000 100:$1.9400 500:$1.7000 1000:$1.6200 3000:$1.6200
SI7102DN-T1-GE3 DISTI # 2335346	Vishay Intertechnologies	MOSFET, N CH, 12V, 35A, POWERPAK 1212 RoHS: Compliant	297	5:£1.2900 25:£1.1800 100:£0.9090 250:£0.8530 500:£0.7970
SI7102DN-T1-GE3 DISTI # C1S803601025928	Vishay Intertechnologies	Trans MOSFET N-CH 12V 25A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	142	100:$1.0144 25:$1.2147 10:$1.2196

相關產品

圖片	型號	描述
	Mfr.#: SI7102DN-T1-E3 OMO.#: OMO-SI7102DN-T1-E3	MOSFET RECOMMENDED ALT 78-SISH410DN-T1-GE3
	Mfr.#: SI7102DN-T1-GE3 OMO.#: OMO-SI7102DN-T1-GE3	MOSFET RECOMMENDED ALT 78-SISH410DN-T1-GE3
	Mfr.#: SI7102DN OMO.#: OMO-SI7102DN-1190	全新原裝
	Mfr.#: SI7102DN-T1-E3 OMO.#: OMO-SI7102DN-T1-E3-VISHAY	MOSFET N-CH 12V 35A PPAK 1212-8
	Mfr.#: SI7102DN-T1-GE3 OMO.#: OMO-SI7102DN-T1-GE3-VISHAY	MOSFET N-CH 12V 35A 1212-8
	Mfr.#: SI7102DNTE1GE3 OMO.#: OMO-SI7102DNTE1GE3-1190	全新原裝

可用性

庫存:: Available
訂購:: 2500
輸入數量:

SI7102DN-T1-GE3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]

參考價格（美元）

數量
單價
小計金額

1: ~~US$0.83~~; ~~US$0.83~~

10: ~~US$0.79~~; ~~US$7.91~~

100: ~~US$0.75~~; ~~US$74.91~~

500: ~~US$0.71~~; ~~US$353.75~~

1000: ~~US$0.67~~; ~~US$665.90~~

從...開始

SI7102 4
SI710 30
SI71 214
SI7 1547

SI7102DN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes