IRL2505PBF

Mfr. #:: IRL2505PBF
製造商:: Infineon Technologies
描述:: Darlington Transistors MOSFET MOSFT 55V 104A 8mOhm 86.7nC LogLvAB
生命週期:: 製造商新產品
數據表:: IRL2505PBF 數據表
交貨:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: IRL2505PBF Datasheet IRL2505PBF Datasheet (P4-P6)IRL2505PBF Datasheet (P7-P9)
ECAD Model:

產品屬性
屬性值

製造商: 紅外線

產品分類: FET - 單

打包: 管子

單位重量: 0.211644 oz

安裝方式: 通孔

包裝盒: TO-220-3

技術: 矽

通道數: 1 Channel

晶體管型: 1 N-Channel

鈀功耗: 200 W

VGS-柵極-源極-電壓: 16 V

Id 連續漏極電流: 104 A

Vds-漏-源-擊穿電壓: 55 V

Rds-On-Drain-Source-Resistance: 8 mOhms

晶體管極性: N通道

Qg-門電荷: 86.7 nC

Tags: IRL25, IRL2, IRL

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRL2505PBF 描述

***(Formerly Allied Electronics): MOSFET, 55V, 104A, 8 mOhm, 86.7 nC Qg, Logic Level, TO-220AB

***ure Electronics: Single N-Channel 55 V 0.008 Ohm 130 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***Yang: Trans MOSFET N-CH 55V 104A 3-Pin(3+Tab) TO-220AB - Rail/Tube

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 200 W

***ment14 APAC: MOSFET, N, 55V, 104A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:104A; Drain Source Voltage Vds:55V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:104A; Junction to Case Thermal Resistance A:0.75°C/W; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:360A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V; Voltage Vgs th Min:1V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.01Ohm;ID 89A;TO-220AB;PD 170W;VGS +/-16V

***fin: Transistor NPN Field Effect IRL3705/IRL3705N INTERNATIONAL RECTIFIER Ampere=89 V=55 TO220

***ure Electronics: Single N-Channel 55 V 0.012 Ohm 98 nC HEXFET® Power Mosfet - TO-220-3

***klin Elektronik: INFINEON THT MOSFET NFET 55V 89A 10mΩ 150°C TO-220 IRL3705NPBF

***eco: MOSFET, 55V, 77A, 10 MOHM, 65.3 NC QG, LOGIC LEVEL, TO

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 89A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:89A; On Resistance, Rds(on):10mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N LOGIC TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:77A; Drain Source Voltage Vds:55V; On Resistance Rds(on):10mohm; Power Dissipation Pd:130W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:89A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:130W; Power Dissipation Pd:130W; Pulse Current Idm:310A; Voltage Vgs th Max:2.5V

***ineon SCT: Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS

***Yang: Trans MOSFET N-CH 55V 110A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube

***roFlash: Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***ark: MOSFET, N-CH, 55V, 75A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.008ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:200W ;RoHS Compliant: Yes

***ineon: Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Brushed Motor Drive; Brushless Motor Drive

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 0.0065Ohm;ID 130A;TO-220AB;PD 200W;VGS +/-16

***ure Electronics: Single N-Channel 40 V 0.0065 Ohm 100 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***et: Trans MOSFET N-CH 40V 130A 3-Pin(3+Tab) TO-220AB

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:130A; On Resistance Rds(On):0.0065Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Product Range:-Rohs Compliant: Yes

***ment14 APAC: MOSFET, N, 40V, 130A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Drain Source Voltage Vds:40V; On Resistance Rds(on):6.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:130A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:520A; Termination Type:Through Hole; Voltage Vds Typ:40V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 130 / Drain-Source Voltage (Vds) V = 40 / ON Resistance (Rds(on)) mOhm = 6.5 / Gate-Source Voltage V = 16 / Fall Time ns = 14 / Rise Time ns = 210 / Turn-OFF Delay Time ns = 25 / Turn-ON Delay Time ns = 16 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 200

***ical: Trans MOSFET N-CH 55V 75A Automotive 3-Pin(3+Tab) TO-220AB Rail

***el Electronic: Processor Supervisor 3.08V 1.2V to 4.9V 3-Pin SC-70 T/R

*** Services: CoC and 2-years warranty / RFQ for pricing

***peria: N-channel TrenchMOS logic level FET

***et: Trans MOSFET N-CH 55V 100A 3-Pin(3+Tab) TO-220AB

***ponent Stockers USA: 100 A 55 V 0.008 ohm N-CHANNEL Si POWER MOSFET TO-220AB

***nell: MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.008ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 175W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Current Id Max: 100A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Through Hole; Voltage Vds Typ: 55V; Voltage Vgs Max: 4V; Voltage Vgs Rds on Measurement: 10V

***emi: 60 V, 120 A, 6 mOhm Single N-Channel Power MOSFET, TO-220

***Yang: Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube

***r Electronics: Power Field-Effect Transistor, 120A I(D), 60V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: MOSFET; Transistor Type:MOSFET; Continuous Drain Current, Id:130A; Drain Source Voltage, Vds:60V; On Resistance, Rds(on):5mohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3.1V; Power Dissipation, Pd:214W ;RoHS Compliant: Yes

Market price

型號	製造商	描述	庫存	價格
IRL2505PBF DISTI # 30312906	Infineon Technologies AG	Trans MOSFET N-CH 55V 104A 3-Pin(3+Tab) TO-220AB Tube	3821	500:$0.8208 100:$0.9072 15:$0.9696
IRL2505PBF DISTI # 30606032	Infineon Technologies AG	Trans MOSFET N-CH 55V 104A 3-Pin(3+Tab) TO-220AB Tube	1000	200:$2.0910 100:$2.1165 50:$2.1675 10:$2.6520 7:$3.7230
IRL2505PBF DISTI # IRL2505PBF-ND	Infineon Technologies AG	MOSFET N-CH 55V 104A TO-220AB RoHS: Compliant Min Qty: 1 Container: Tube	1078In Stock	1000:$1.2063 500:$1.4559 100:$1.8718 10:$2.3290 1:$2.5800
IRL2505PBF DISTI # C1S322000635966	Infineon Technologies AG	Trans MOSFET N-CH 55V 104A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	1000	500:$1.4400 200:$1.6400 100:$1.6600 50:$1.7000 10:$2.0800 1:$2.9200
IRL2505PBF DISTI # C1S322000501289	Infineon Technologies AG	Trans MOSFET N-CH 55V 104A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	3821	2000:$0.8530 1000:$0.9200 500:$1.2000 100:$1.3000 25:$1.5900 5:$1.9600
IRL2505PBF DISTI # IRL2505PBF	Infineon Technologies AG	Trans MOSFET N-CH 55V 104A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRL2505PBF) RoHS: Compliant Min Qty: 1 Container: Tube	Americas - 11278	1:$1.3469 10:$1.2209 25:$1.2179 50:$1.2149 100:$1.0289 500:$0.8979 1000:$0.8679
IRL2505PBF DISTI # SP001567114	Infineon Technologies AG	Trans MOSFET N-CH 55V 104A 3-Pin(3+Tab) TO-220AB (Alt: SP001567114) RoHS: Compliant Min Qty: 1	Europe - 6150	1:€1.3599 10:€1.2329 25:€1.2299 50:€1.2269 100:€1.0389 500:€0.9069 1000:€0.8759
IRL2505PBF DISTI # IRL2505PBF	Infineon Technologies AG	Trans MOSFET N-CH 55V 104A 3-Pin(3+Tab) TO-220AB (Alt: IRL2505PBF) RoHS: Compliant Min Qty: 1000	Asia - 0
IRL2505PBF. DISTI # 26AC0700	Infineon Technologies AG	Transistor Polarity:N Channel,Continuous Drain Current Id:104A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.008ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:200W,No. of Pins:3Pins RoHS Compliant: Yes	0	1:$2.2300 10:$1.9000 100:$1.5200 500:$1.3300 1000:$1.1000
IRL2505PBF DISTI # 70017478	Infineon Technologies AG	MOSFET,Power,N-Ch,VDSS 55V,RDS(ON) 0.008Ohm,ID 104A,TO-220AB,PD 200W,VGS +/-16V RoHS: Compliant	0	1:$2.3460 10:$2.0700 100:$1.8050 500:$1.5640 1000:$1.3800
IRL2505PBF	International Rectifier	RoHS: Not Compliant	100	1000:$0.8500 500:$0.9000 100:$0.9400 25:$0.9800 1:$1.0500
IRL2505PBF DISTI # 942-IRL2505PBF	Infineon Technologies AG	MOSFET MOSFT 55V 104A 8mOhm 86.7nC LogLvAB RoHS: Compliant	612	1:$2.2300 10:$1.9000 100:$1.5200 500:$1.3300 1000:$1.1000
IRL2505PBF DISTI # 5431544	Infineon Technologies AG	MOSFET N-CH 55V 104A LOGICFET TO220AB, EA	276	1:£2.6700 10:£1.5200 25:£1.4000
IRL2505PBF DISTI # 5431544P	Infineon Technologies AG	MOSFET N-CH 55V 104A LOGICFET TO220AB, TU	250	10:£1.5200 25:£1.4000
IRL2505PBF DISTI # IRL2505PBF	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,55V,104A,200W,TO220AB	283	1:$1.7800 3:$1.6600 10:$1.3300 50:$1.1300
IRL2505PBF DISTI # IRL2505PBF	Infineon Technologies AG	N-LogL 55V 104A 200W 0,008R TO220AB RoHS: Compliant	320	10:€1.0600 50:€0.7560 200:€0.6560 500:€0.6315
IRL2505PBF DISTI # TMOS1129	Infineon Technologies AG	N-CHANNEL 55V 104A 8mOhm HEXFET RoHS: Compliant	Stock DE - 2000Stock US - 0	50:$1.1800 150:$1.1062 250:$1.0392 550:$0.9386 1000:$0.9051
IRL2505PBF DISTI # 8650918	Infineon Technologies AG	MOSFET, N, 55V, 104A, TO-220 RoHS: Compliant	0	5:£1.5500 25:£1.1600 100:£1.0700 250:£0.9870 500:£0.8710
IRL2505PBF DISTI # 8650918	Infineon Technologies AG	MOSFET, N, 55V, 104A, TO-220 RoHS: Compliant	0	1:$3.5300 10:$3.0100 100:$2.4100 500:$2.1000 1000:$1.7500

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