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FDMS3500

FDMS3500
Mfr. #:
FDMS3500
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET 75V N-Channel PowerTrench
生命週期:
製造商新產品
數據表:
FDMS3500 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
FDMS3500 更多信息
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
Power-56-8
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
75 V
Id - 連續漏極電流：
9.2 A
Rds On - 漏源電阻：
14.5 mOhms
Vgs - 柵源電壓：
20 V
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
2.5 W
配置：
單身的
頻道模式：
增強
商品名：
動力戰壕
打包：
捲軸
高度：
1.1 mm
長度：
6 mm
系列：
FDMS3500
晶體管類型：
1 N-Channel
寬度：
5 mm
品牌：
安森美半導體/飛兆半導體
秋季時間：
6 ns
產品類別：
MOSFET
上升時間：
9 ns
出廠包裝數量：
3000
子類別：
MOSFET
典型關斷延遲時間：
48 ns
典型的開啟延遲時間：
16 ns
單位重量：
0.002402 oz
Tags
FDMS35, FDMS3, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel PowerTrench® MOSFET 75V, 49A, 14.5mΩ
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
***nell
MOSFET,N CH,75V,9.2A,POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0111ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:96W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; SVHC:No SVHC (19-Dec-2011)
***ure Electronics
Single N-Channel 80 V 13.4 mOhm 27 nC HEXFET® Power Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET N-CH 80V 10A 8-Pin SOIC T/R / MOSFET N-CH 80V 10A 8-SOIC
***ineon SCT
80V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package, SO8, RoHS
***nell
MOSFET, N-CH, 80V, 10A, SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.9V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***(Formerly Allied Electronics)
Transistor, MOSFET, N-channel normal level, 80V, 11A, 12.3 mOhm, TDSON8 | Infineon BSC123N08NS3 G
***ure Electronics
Single N-Channel 80 V 24 mOhm 25 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N CH, 55A, 80V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:80V; On Resistance Rds(on):10.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:66W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:55A; Power Dissipation Pd:66W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 55 / Drain-Source Voltage (Vds) V = 80 / ON Resistance (Rds(on)) mOhm = 12.3 / Gate-Source Voltage V = 20 / Fall Time ns = 4 / Rise Time ns = 18 / Turn-OFF Delay Time ns = 19 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SuperSO8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 66
***ineon
OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control
***emi
N-Channel PowerTrench® MOSFET, 60V, 10A, 14mΩ
***ure Electronics
N-Channel 60 V 14 mOhm SMT PowerTrench Mosfet SOIC-8
***Yang
Trans MOSFET N-CH 60V 10A 8-Pin SOIC N T/R - Tape and Reel
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:10A; On Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
***emi
N-Channel UltraFET Trench® MOSFET 60V, 22A, 11.5mΩ
***rchild Semiconductor
UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.
***ment14 APAC
MOSFET, N, SMD, MLP; Transistor Polarity:N Channel; Continuous Drain Current Id:10.6A; Drain Source Voltage Vds:60V; On Resistance Rds(on):11.5mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:3.2V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:10.6A; Package / Case:Power 56; Power Dissipation Pd:2.5W; Pulse Current Idm:60A; SMD Marking:FDMS5672; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:3.2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
***(Formerly Allied Electronics)
MOSFET, N Ch., 80V, 10A, 13.4 MOHM, 27 NC QG, SO-8, Pb-Free
***ernational Rectifier
80V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package
***p One Stop Global
Trans MOSFET N-CH 80V 10A 8-Pin SOIC Tube
***ment14 APAC
MOSFET, N, 80V, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:80V; On Resistance Rds(on):13.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.9V; Power Dissipation Pd:79mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Base Number:7854; Current Id Max:10A; Output Current Max:2.5A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:79mW; Pulse Current Idm:79A; Termination Type:SMD; Voltage Vds Typ:80V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ure Electronics
Single N-Channel 80 V 15 mOhm 35 nC HEXFET® Power Mosfet - SOIC-8
*** Source Electronics
MOSFET N-CH 80V 9.3A 8-SOIC / Trans MOSFET N-CH 80V 9.3A 8-Pin SOIC T/R
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 1206 1500pF 630volts U2J +/-5%
*** Stop Electro
Power Field-Effect Transistor, 9.3A I(D), 80V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: Load Switch High Side
***nell
MOSFET, N, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 9.3A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.015ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
型號 製造商 描述 庫存 價格
FDMS3500
DISTI # FDMS3500CT-ND		ON SemiconductorMOSFET N-CH 75V 9.2A POWER56
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5995In Stock
  • 1000:$0.9432
  • 500:$1.1302
  • 100:$1.4418
  • 10:$1.7850
  • 1:$1.9700
FDMS3500
DISTI # FDMS3500DKR-ND		ON SemiconductorMOSFET N-CH 75V 9.2A POWER56
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5995In Stock
  • 1000:$0.9432
  • 500:$1.1302
  • 100:$1.4418
  • 10:$1.7850
  • 1:$1.9700
FDMS3500
DISTI # FDMS3500TR-ND		ON SemiconductorMOSFET N-CH 75V 9.2A POWER56
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 3000:$0.8552
FDMS3500
DISTI # FDMS3500		ON SemiconductorTrans MOSFET N-CH 75V 9.2A 8-Pin Power 56 T/R (Alt: FDMS3500)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€1.0619
  • 6000:€0.8689
  • 12000:€0.7969
  • 18000:€0.7349
  • 30000:€0.6829
FDMS3500
DISTI # FDMS3500		ON SemiconductorTrans MOSFET N-CH 75V 9.2A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS3500)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.7179
  • 6000:$0.7139
  • 12000:$0.7049
  • 18000:$0.6959
  • 30000:$0.6789
FDMS3500
DISTI # 512-FDMS3500		ON SemiconductorMOSFET 75V N-Channel PowerTrench
RoHS: Compliant		4065
  • 1:$1.6200
  • 10:$1.3800
  • 100:$1.1000
  • 500:$0.9630
  • 1000:$0.7980
FDMS3500Fairchild Semiconductor CorporationPower Field-Effect Transistor, 9.2A I(D), 75V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		10516
  • 1000:$0.8000
  • 500:$0.8500
  • 100:$0.8800
  • 25:$0.9200
  • 1:$0.9900
FDMS3500Fairchild Semiconductor Corporation 3519
    圖片 型號 描述
    SMBJ30A-TR

    Mfr.#: SMBJ30A-TR

    OMO.#: OMO-SMBJ30A-TR

    		 TVS Diodes / ESD Suppressors 600W 30V Unidirect
    2N3906TF

    Mfr.#: 2N3906TF

    OMO.#: OMO-2N3906TF

    		 Bipolar Transistors - BJT PNP Transistor General Purpose
    SA11CA

    Mfr.#: SA11CA

    OMO.#: OMO-SA11CA

    		 TVS Diodes / ESD Suppressors SA11CA Bi-Directional
    1N4148TA

    Mfr.#: 1N4148TA

    OMO.#: OMO-1N4148TA

    		 Diodes - General Purpose, Power, Switching Hi Conductance Fast
    LVK12R015DER

    Mfr.#: LVK12R015DER

    OMO.#: OMO-LVK12R015DER

    		 Current Sense Resistors - SMD 1/2W 0.015 Ohm 0.5% 50ppm
    SA11CA

    Mfr.#: SA11CA

    OMO.#: OMO-SA11CA-LITTELFUSE

    		 TVS DIODE 11V 18.2V DO15
    SMBJ30A-TR

    Mfr.#: SMBJ30A-TR

    OMO.#: OMO-SMBJ30A-TR-STMICROELECTRONICS

    		 TVS DIODE 30V 48.4V SMB
    2N3906TF

    Mfr.#: 2N3906TF

    OMO.#: OMO-2N3906TF-ON-SEMICONDUCTOR

    		 Bipolar Transistors - BJT PNP Transistor General Purpose
    1N4148TA

    Mfr.#: 1N4148TA

    OMO.#: OMO-1N4148TA-ON-SEMICONDUCTOR

    		 DIODE GEN PURP 100V 200MA DO35
    可用性
    庫存:
    Available
    訂購:
    1987
    輸入數量:
    FDMS3500的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$1.61
    US$1.61
    10
    US$1.37
    US$13.70
    100
    US$1.10
    US$110.00
    500
    US$0.96
    US$481.50
    1000
    US$0.80
    US$798.00
    由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
    從...開始
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