FDFME3N311ZT

FDFME3N311ZT
Mfr. #:
FDFME3N311ZT
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET Int. NCh PowerTrench MOSFET & Sch. Diode
生命週期:
製造商新產品
數據表:
FDFME3N311ZT 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商:
安森美半導體
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
貼片/貼片
包裝/案例:
MicroFET-6
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
30 V
Id - 連續漏極電流:
1.6 A
Rds On - 漏源電阻:
299 mOhms
Vgs - 柵源電壓:
12 V
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
Pd - 功耗:
1.1 W
配置:
單身的
頻道模式:
增強
商品名:
動力戰壕
打包:
捲軸
高度:
0.75 mm
長度:
2 mm
產品:
MOSFET 小信號
系列:
FDFME3N311ZT
晶體管類型:
1 N-Channel
類型:
功率溝槽 MOSFET
寬度:
2 mm
品牌:
安森美半導體/飛兆半導體
正向跨導 - 最小值:
2.8 S
秋季時間:
2.8 ns
產品類別:
MOSFET
上升時間:
16 ns
出廠包裝數量:
5000
子類別:
MOSFET
典型關斷延遲時間:
35 ns
典型的開啟延遲時間:
12 ns
單位重量:
0.000889 oz
Tags
FDFME, FDFM, FDF
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 30 V, 1.8 A, 299 mΩ
***ark
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:1.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.299ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:0.5W ;RoHS Compliant: Yes
***rchild Semiconductor
This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It features a MOSFET with low input capacitance, total gate charge and on-state resistance. An independently connected schottky diode with low forward voltage and reverse leakage current to maximize boost efficiency.The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications.
型號 製造商 描述 庫存 價格
FDFME3N311ZT
DISTI # FDFME3N311ZTTR-ND
ON SemiconductorMOSFET N-CH 30V 1.8A 6MICROFET
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
Limited Supply - Call
  • 5000:$0.2525
FDFME3N311ZT
DISTI # FDFME3N311ZTCT-ND
ON SemiconductorMOSFET N-CH 30V 1.8A 6MICROFET
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    FDFME3N311ZT
    DISTI # FDFME3N311ZTDKR-ND
    ON SemiconductorMOSFET N-CH 30V 1.8A 6MICROFET
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      FDFME3N311ZT
      DISTI # FDFME3N311ZT
      ON SemiconductorTrans MOSFET N-CH 30V 1.8A 6-Pin MicroFET T/R (Alt: FDFME3N311ZT)
      RoHS: Compliant
      Min Qty: 5000
      Container: Tape and Reel
      Europe - 0
      • 5000:€0.4469
      • 10000:€0.3479
      • 20000:€0.2889
      • 30000:€0.2429
      • 50000:€0.2249
      FDFME3N311ZT
      DISTI # 73R3644
      ON SemiconductorMOSFET Transistor,Transistor Polarity:N Channel,Continuous Drain Current Id:1.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.299ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V,Power Dissipation Pd:500mW RoHS Compliant: Yes0
      • 1:$0.6400
      • 25:$0.5270
      • 50:$0.4340
      • 100:$0.3400
      • 250:$0.3170
      • 500:$0.2950
      • 1000:$0.2720
      FDFME3N311ZT
      DISTI # 64R3000
      ON SemiconductorMOSFET Transistor, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:1.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.299ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V,No. of Pins:6Pins RoHS Compliant: Yes0
      • 1:$0.2860
      • 5000:$0.2840
      • 10000:$0.2500
      • 25000:$0.2250
      • 50000:$0.2130
      FDFME3N311ZTFairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 1.6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      RoHS: Compliant
      60662
      • 1000:$0.2500
      • 500:$0.2600
      • 100:$0.2700
      • 25:$0.2900
      • 1:$0.3100
      FDFME3N311ZT
      DISTI # 1813536
      ON SemiconductorMOSFET Transistor
      RoHS: Compliant
      0
      • 5000:£0.2410
      FDFME3N311ZT
      DISTI # 1813536
      ON SemiconductorMOSFET Transistor
      RoHS: Compliant
      0
      • 5000:$0.9780
      圖片 型號 描述
      8P34S1106NLGI

      Mfr.#: 8P34S1106NLGI

      OMO.#: OMO-8P34S1106NLGI

      Clock Drivers & Distribution 1:6 LVDS Output 1.8V Fanout Buffer
      NCP45560IMNTWG-H

      Mfr.#: NCP45560IMNTWG-H

      OMO.#: OMO-NCP45560IMNTWG-H

      Power Switch ICs - Power Distribution NCP45560IMNTWG-H
      LP3965EMP-ADJ/NOPB

      Mfr.#: LP3965EMP-ADJ/NOPB

      OMO.#: OMO-LP3965EMP-ADJ-NOPB

      LDO Voltage Regulators 1.5A FAST ULTRA LDO LINEAR REG
      LP3965EMP-ADJ/NOPB

      Mfr.#: LP3965EMP-ADJ/NOPB

      OMO.#: OMO-LP3965EMP-ADJ-NOPB-TEXAS-INSTRUMENTS

      IC REG LIN POS ADJ 1.5A SOT223-5
      53375-0410

      Mfr.#: 53375-0410

      OMO.#: OMO-53375-0410-410

      Headers & Wire Housings 2.50MM 4P VERT HDR FRCTN POS LOCK
      598-8140-107F

      Mfr.#: 598-8140-107F

      OMO.#: OMO-598-8140-107F-1052

      Standard LEDs - SMD Yellow Water Clr 160mcd 595nm
      NCP45560IMNTWG-H

      Mfr.#: NCP45560IMNTWG-H

      OMO.#: OMO-NCP45560IMNTWG-H-ON-SEMICONDUCTOR

      Power Switch ICs - Power Distribution NCP45560IMNTWG-H
      8P34S1106NLGI

      Mfr.#: 8P34S1106NLGI

      OMO.#: OMO-8P34S1106NLGI-INTEGRATED-DEVICE-TECH

      Clock Drivers & Distribution 1:6 LVDS Output 1.8V Fanout Buffe
      可用性
      庫存:
      776
      訂購:
      2759
      輸入數量:
      FDFME3N311ZT的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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