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FDMS037N08B

FDMS037N08B
Mfr. #:
FDMS037N08B
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET PT7 75V 3.7mohm PQFN56
生命週期:
製造商新產品
數據表:
FDMS037N08B 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
Power-56-8
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
75 V
Id - 連續漏極電流：
100 A
Rds On - 漏源電阻：
3.7 mOhms
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
商品名：
動力戰壕
打包：
捲軸
高度：
1.1 mm
長度：
6 mm
系列：
FDMS037N08B
寬度：
5 mm
品牌：
安森美半導體/飛兆半導體
產品類別：
MOSFET
出廠包裝數量：
3000
子類別：
MOSFET
單位重量：
0.002402 oz
Tags
FDMS03, FDMS0, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 75 V 3.7 mOhm 100 nC 104.2 W PowerTrench SMT Mosfet POWER 56-8
***emi
N-Channel PowerTrench® MOSFET 75V, 100A, 3.7mΩ
***r Electronics
Small Signal Field-Effect Transistor, 19.9A I(D), 75V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET, N-CH, 75V, 100A, 104.2W, POWER56; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.00301ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 104.2W; Transistor Case Style: Power 56; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a DirectFET ME Package, MG-WDSON-8, RoHS
***ure Electronics
Single N-Channel 60 V 2.9 mOhm 120 nC HEXFET® Power Mosfet - DirectFET®
***ment14 APAC
MOSFET, N-CH, 60V, 114A, DIRECTFET ME; Transistor Polarity:N Channel; Continuous Drain Current Id:114A; Source Voltage Vds:60V; On Resistance
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
***nell
MOSFET, N-CH, 60V, 114A, DIRECTFET ME; Transistor Polarity: N Channel; Continuous Drain Current Id: 114A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0029ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V; Power Dissipation Pd: 96W; Transistor Case Style: DirectFET ME; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: StrongIRFET, DirectFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ure Electronics
Single N-Channel 75 V 4.1 mOhm 120 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ical
Trans MOSFET N-CH Si 75V 170A 3-Pin(2+Tab) D2PAK Tube
***(Formerly Allied Electronics)
MOSFET, N Ch., 75V, 170A, 4.1 MOHM, 120NC QG, D2-PAK, Pb-Free
***nell
MOSFET, N, 75V, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 170A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissip
***(Formerly Allied Electronics)
Transistor MOSFET N-ch 75V 120A D2PAK
***ical
Trans MOSFET N-CH Si 75V 170A Automotive 3-Pin(2+Tab) D2PAK T/R
***ernational Rectifier
Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon SCT
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area, D2PAK-3, RoHS
***nell
MOSFET, N-CH, 75V, 170A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0033ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:300W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
***ineon
Benefits: Advanced Process Technology; Ultra Low On-Resistance; 175C Operating Temperature; Fast Switching; Repetitive Avalanche Allowed up to Tjmax; Lead-Free, RoHS Compliant; Automotive Qualified
***icroelectronics
N-channel 80 V, 3 mOhm typ., 130 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package
***ical
Trans MOSFET N-CH 80V 120A 8-Pin Power Flat T/R
***(Formerly Allied Electronics)
MOSFET N-Ch 80V 26A STripFET PowerFLAT8
***et Japan
Trans MOSFET N-CH 80V 123A PowerFlat T/R
*** Electronic Components
MOSFET N-CH 80V 4 mOhm 24A STripFET VII
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 130A I(D), 80V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***icroelectronics SCT
Power MOSFETs, 80V, 120A, PowerFLAT 5x6, Tape and Reel
***ment14 APAC
MOSFET, N-CH, 80V, 120A, 175DEG C, 135W;
***ronik
N-CH 80V 130A 3,6mOhm PFLAT5x6
***ark
MOSFET, N CH, 80V, 0.0026OHM, 76A, POWER 56-8; Transistor Polarity:N Channel; Co
***emi
N-Channel PowerTrench® MOSFET, Dual CoolTM 56, 80V, 110A, 3.1mΩ
***ure Electronics
Dual N-Channel 80 V 5 mOhm 84 nC 125 W PowerTrench SMT Mosfet - PQFN-8
*** Stop Electro
Power Field-Effect Transistor, 24A I(D), 80V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
***nell
MOSFET, N CH, 80V, 76A, POWER 56-8; Transistor Polarity:N Channel; Continuous Drain Current Id:76A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.3V; Power Dissipation Pd:125W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:-; SVHC:No SVHC (20-Jun-2013)
*** Electronics
In a Pack of 5, N-Channel MOSFET, 100 A, 60 V, 8-Pin Power 56 ON Semiconductor FDMS030N06B
***ure Electronics
Single N-Channel 60 V 3 mOhm 75 nC 2.5 W PowerTrench SMT Mosfet - POWER 56-8
***emi
N-Channel PowerTrench® MOSFET 60V, 100A, 3mΩ
***ment14 APAC
MOSFET, N-CH, 60V, 100A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Source Voltage Vds:60V; On Resistance
***r Electronics
Power Field-Effect Transistor, 22.1A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET, N-CH, 60V, 100A, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.3V; Power Dissipation Pd: 104W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
型號 製造商 描述 庫存 價格
FDMS037N08B
DISTI # V72:2272_06338157		ON SemiconductorTrans MOSFET N-CH Si 75V 19.9A 8-Pin Power 56 T/R4238
  • 3000:$0.9424
  • 1000:$1.0156
  • 500:$1.2344
  • 250:$1.2683
  • 100:$1.4092
  • 25:$1.7563
  • 10:$1.7751
  • 1:$2.0810
FDMS037N08B
DISTI # FDMS037N08BTR-ND		ON SemiconductorMOSFET N-CH 75V 100A 8QFN
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$1.1587
FDMS037N08B
DISTI # FDMS037N08BCT-ND		ON SemiconductorMOSFET N-CH 75V 100A 8QFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.2785
  • 500:$1.5334
  • 100:$1.9583
  • 10:$2.4250
  • 1:$2.6800
FDMS037N08B
DISTI # FDMS037N08BDKR-ND		ON SemiconductorMOSFET N-CH 75V 100A 8QFN
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.2785
  • 500:$1.5334
  • 100:$1.9583
  • 10:$2.4250
  • 1:$2.6800
FDMS037N08B
DISTI # 30331036		ON SemiconductorTrans MOSFET N-CH Si 75V 19.9A 8-Pin Power 56 T/R4238
  • 3000:$0.9424
  • 1000:$1.0156
  • 500:$1.2344
  • 250:$1.2683
  • 100:$1.4092
  • 25:$1.7563
  • 10:$1.7751
  • 7:$2.0810
FDMS037N08B
DISTI # FDMS037N08B		ON SemiconductorTrans MOSFET N-CH 75V 19.9A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS037N08B)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.9799
  • 6000:$0.9739
  • 12000:$0.9609
  • 18000:$0.9489
  • 30000:$0.9249
FDMS037N08B
DISTI # FDMS037N08B		ON SemiconductorTrans MOSFET N-CH 75V 19.9A 8-Pin Power 56 T/R (Alt: FDMS037N08B)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€1.3039
  • 6000:€1.0869
  • 12000:€1.0029
  • 18000:€0.9309
  • 30000:€0.8689
FDMS037N08B
DISTI # 512-FDMS037N08B		ON SemiconductorMOSFET PT7 75V 3.7mohm PQFN56
RoHS: Compliant		726
  • 1:$2.2100
  • 10:$1.8800
  • 100:$1.5000
  • 500:$1.3200
  • 1000:$1.0900
  • 3000:$1.0200
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可用性
庫存:
Available
訂購:
2000
輸入數量:
FDMS037N08B的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$2.20
US$2.20
10
US$1.87
US$18.70
100
US$1.50
US$150.00
500
US$1.31
US$655.00
1000
US$1.08
US$1 080.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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