IPSA70R600P7SAKMA1

IPSA70R600P7SAKMA1
Mfr. #:
IPSA70R600P7SAKMA1
製造商:
Infineon Technologies
描述:
MOSFET CONSUMER
生命週期:
製造商新產品
數據表:
IPSA70R600P7SAKMA1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商:
英飛凌
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
通孔
包裝/案例:
PG-TO-251-3
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
700 V
Id - 連續漏極電流:
8.5 A
Rds On - 漏源電阻:
490 mOhms
Vgs th - 柵源閾值電壓:
2.5 V
Vgs - 柵源電壓:
16 V
Qg - 門電荷:
10.5 nC
最低工作溫度:
- 40 C
最高工作溫度:
+ 150 C
Pd - 功耗:
43.1 W
配置:
單身的
頻道模式:
增強
打包:
管子
晶體管類型:
1 N-Channel
品牌:
英飛凌科技
秋季時間:
23 ns
產品類別:
MOSFET
上升時間:
5.5 ns
出廠包裝數量:
1500
子類別:
MOSFET
典型關斷延遲時間:
63 ns
典型的開啟延遲時間:
14 ns
第 # 部分別名:
IPSA70R600P7S SP001664806
Tags
IPSA70R6, IPSA7, IPSA, IPS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 700V 8.5A 3-Pin(3+Tab) TO-251 Tube
***ark
Mosfet, N-Ch, 700V, 8.5A, To-251; Transistor Polarity:n Channel; Continuous Drain Current Id:8.5A; Drain Source Voltage Vds:700V; On Resistance Rds(On):0.49Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
Summary of Features: Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off; Highly performant technology Low switching losses (E oss) Highly efficient Excellent thermal behavior; Allowing high speed switching; Integrated protection Zener diode; Optimized V (GS)th of 3V with very narrow tolerance of 0.5V; Finely graduated portfolio | Benefits: Cost competitive technology; Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology; Further efficiency gain at higher switching speed; Supporting less magnetic size with lower BOM costs; High ESD ruggedness up to HBM Class 2 level; Easy to drive and design-in; Enabler for smaller form factors and high power density designs; Excellent choice in selecting the best fitting product | Target Applications: Charger; Adapter; TV; Lighting; Audio; Aux power
型號 製造商 描述 庫存 價格
IPSA70R600P7SAKMA1
DISTI # IPSA70R600P7SAKMA1-ND
Infineon Technologies AGMOSFET COOLMOS 700V TO251-3
RoHS: Compliant
Min Qty: 1
Container: Tube
1835In Stock
  • 6000:$0.3050
  • 3000:$0.3276
  • 1500:$0.3615
  • 100:$0.5717
  • 25:$0.7004
  • 10:$0.7460
  • 1:$0.8500
IPSA70R600P7SAKMA1
DISTI # IPSA70R600P7SAKMA1
Infineon Technologies AGCONSUMER - Rail/Tube (Alt: IPSA70R600P7SAKMA1)
RoHS: Compliant
Min Qty: 1500
Container: Tube
Americas - 3000
  • 15000:$0.2649
  • 7500:$0.2719
  • 4500:$0.2789
  • 3000:$0.2859
  • 1500:$0.2939
IPSA70R600P7SAKMA1
DISTI # IPSA70R600P7SAKMA1
Infineon Technologies AGCONSUMER - Bulk (Alt: IPSA70R600P7SAKMA1)
Min Qty: 1250
Container: Bulk
Americas - 0
    IPSA70R600P7SAKMA1
    DISTI # 49AC8010
    Infineon Technologies AGMOSFET, N-CH, 700V, 8.5A, TO-251,Transistor Polarity:N Channel,Continuous Drain Current Id:8.5A,Drain Source Voltage Vds:700V,On Resistance Rds(on):0.49ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes480
    • 1000:$0.3480
    • 500:$0.3920
    • 100:$0.4350
    • 10:$0.6750
    • 1:$0.8080
    IPSA70R600P7SAKMA1
    DISTI # 726-IPSA70R600P7SAKM
    Infineon Technologies AGMOSFET CONSUMER
    RoHS: Compliant
    1987
    • 1:$0.8000
    • 10:$0.6680
    • 100:$0.4310
    • 1000:$0.3450
    IPSA70R600P7SAKMA1Infineon Technologies AG 
    RoHS: Not Compliant
    1500
    • 1000:$0.2600
    • 500:$0.2800
    • 100:$0.2900
    • 25:$0.3000
    • 1:$0.3200
    IPSA70R600P7SAKMA1
    DISTI # 2843153
    Infineon Technologies AGMOSFET, N-CH, 700V, 8.5A, TO-251
    RoHS: Compliant
    480
    • 6000:$0.4600
    • 3000:$0.4940
    • 1500:$0.5450
    • 100:$0.8620
    • 25:$1.0600
    • 5:$1.1300
    IPSA70R600P7SAKMA1
    DISTI # 2843153
    Infineon Technologies AGMOSFET, N-CH, 700V, 8.5A, TO-251480
    • 500:£0.2850
    • 250:£0.3070
    • 100:£0.3290
    • 10:£0.5590
    • 1:£0.6990
    圖片 型號 描述
    MJD31CT4G

    Mfr.#: MJD31CT4G

    OMO.#: OMO-MJD31CT4G

    Bipolar Transistors - BJT 3A 100V 15W NPN
    STGD4M65DF2

    Mfr.#: STGD4M65DF2

    OMO.#: OMO-STGD4M65DF2

    IGBT Transistors PTD HIGH VOLTAGE
    STGF4M65DF2

    Mfr.#: STGF4M65DF2

    OMO.#: OMO-STGF4M65DF2

    IGBT Transistors PTD HIGH VOLTAGE
    STGD4M65DF2

    Mfr.#: STGD4M65DF2

    OMO.#: OMO-STGD4M65DF2-STMICROELECTRONICS

    TRENCH GATE FIELD-STOP IGBT, M S
    STGF4M65DF2

    Mfr.#: STGF4M65DF2

    OMO.#: OMO-STGF4M65DF2-STMICROELECTRONICS

    TRENCH GATE FIELD-STOP IGBT, M S
    MJD31CT4G

    Mfr.#: MJD31CT4G

    OMO.#: OMO-MJD31CT4G-ON-SEMICONDUCTOR

    Bipolar Transistors - BJT 3A 100V 15W NPN
    可用性
    庫存:
    Available
    訂購:
    1984
    輸入數量:
    IPSA70R600P7SAKMA1的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格(美元)
    數量
    單價
    小計金額
    1
    US$0.80
    US$0.80
    10
    US$0.67
    US$6.68
    100
    US$0.43
    US$43.10
    1000
    US$0.34
    US$345.00
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