APT8024B2FLLG

Mfr. #:: APT8024B2FLLG
製造商:: Microchip Technology Inc
描述:: MOSFET Power FREDFET - MOS7
生命週期:: 製造商新產品
數據表:: APT8024B2FLLG 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

產品屬性
屬性值

Tags: APT8024B, APT8024, APT802, APT80, APT8, APT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

APT8024B2FLLG 描述

***et: Trans MOSFET N-CH 800V 31A 3-Pin(3+Tab) T-MAX

***hardson RFPD: POWER FREDFET TRANSISTOR

***ure Electronics: Single N-Channel 600 V 220 mOhms Flange Mount Power Mosfet - TO-247AC

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 27A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

***nell: MOSFET, N, 600V, 27A, TO-247AC; Transistor Polarity: N Channel; Continuous Drain Current Id: 27A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.22ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power

***ure Electronics: Single N-Channel 600 V 250 mOhms Flange Mount Power Mosfet - TO-247AC

***et: Trans MOSFET N-CH 600V 26A 3-Pin(3+Tab) TO-247AC

***ark: Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:26A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:470W; No. of Pins:3Pins RoHS Compliant: No

*** Electronics: Trans MOSFET N-CH 600V 27A 3-Pin(3+Tab) TO-247AC

***et: MOSFET N-CHANNEL 600V

***or: MOSFET N-CH 600V 27A TO247-3

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:600V; Continuous Drain Current, Id:27A; On Resistance, Rds(on):220mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247AC ;RoHS Compliant: No

***emi: N-Channel Power MOSFET, SUPERFET® II, FAST, 600 V, 37 A, 104 mΩ, TO-247

***r Electronics: Power Field-Effect Transistor, 37A I(D), 600V, 0.104ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizingcharge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency.

***emi: N-Channel Power MOSFET, SUPERFET® II, FRFET®, 650 V, 35 A, 110 mΩ, TO-247

*** Stop Electro: Power Field-Effect Transistor, 35A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB

***el Electronic: Aluminum Electrolytic Capacitors 47μF Radial, Can - SMD ±20% Tape & Reel (TR) HB 0.228 5.80mm Surface Mount Automotive 65mA Cap Aluminum Lytic 47uF 25V 20% (6.3 X 5.8mm) SMD 65mA 2000h 105C T/R

***rchild Semiconductor: SuperFET®II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizingcharge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailoredto minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently,SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET®MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.

***emi: N-Channel Power MOSFET, SUPERFET® II, FAST, 600V, 28A, 130mΩ, TO-247

***r Electronics: Power Field-Effect Transistor, 28A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency.

Market price

型號	製造商	描述	庫存	價格
APT8024B2FLLG DISTI # 494-APT8024B2FLLG	Microchip Technology Inc	MOSFET Power FREDFET - MOS7	0

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