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FCD380N60E

FCD380N60E
Mfr. #:
FCD380N60E
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET 600V N-Channel MOSFET
生命週期:
製造商新產品
數據表:
FCD380N60E 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
TO-252-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
650 V
Id - 連續漏極電流：
10.2 A
Rds On - 漏源電阻：
380 mOhms
Vgs th - 柵源閾值電壓：
3.5 V
Vgs - 柵源電壓：
30 V
Qg - 門電荷：
34 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
106 W
配置：
單身的
商品名：
超級場效應晶體管 II
打包：
捲軸
高度：
2.39 mm
長度：
6.73 mm
產品：
MOSFET
系列：
FCD380N60E
晶體管類型：
1 N-Channel
寬度：
6.22 mm
品牌：
安森美半導體/飛兆半導體
正向跨導 - 最小值：
10 S
秋季時間：
10 ns
產品類別：
MOSFET
上升時間：
9 ns
出廠包裝數量：
2500
子類別：
MOSFET
典型關斷延遲時間：
64 ns
典型的開啟延遲時間：
17 ns
單位重量：
0.009184 oz
Tags
FCD3, FCD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 10.2 A, 380 mΩ, DPAK
***ure Electronics
N-Channel 600 V 380 mO Surface Mount SuperFET II Easy Drive Mosfet -TO-252
***p One Stop Global
Trans MOSFET N-CH 600V 10.2A 3-Pin(2+Tab) TO-252 T/R
***ark
SuperFET2 380mohm, TO252 - TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
***et Europe
Trans MOSFET N-CH 600V 10.2A 3-Pin DPAK T/R
***Components
MOSFET N-Ch SuperFET II 600V 10.2A DPAK
***ical
Trans MOSFET N-CH 600V 10.2A T/R
***i-Key
MOSFET N CH 600V 10.2A DPAK
***et
SUPERFET2 380MOHM, TO252
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 10.2A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:10.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.32ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:106W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:SuperFET II Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)
***nell
MOSFET, CA-N, 600V 10,2A, TO-252-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:10.2A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.32ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:106W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:SuperFET II Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
型號 製造商 描述 庫存 價格
FCD380N60E
DISTI # V72:2272_06337701		ON SemiconductorTrans MOSFET N-CH 600V 10.2A 3-Pin(2+Tab) DPAK T/R2500
  • 1000:$0.8777
  • 500:$1.0141
  • 250:$1.1024
  • 100:$1.2248
  • 25:$1.5097
  • 10:$1.5301
  • 1:$1.9742
FCD380N60E
DISTI # V36:1790_06337701		ON SemiconductorTrans MOSFET N-CH 600V 10.2A 3-Pin(2+Tab) DPAK T/R0
  • 2500:$0.8567
FCD380N60E
DISTI # FCD380N60ECT-ND		ON SemiconductorMOSFET N CH 600V 10.2A DPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3735In Stock
  • 1000:$0.9660
  • 500:$1.1659
  • 100:$1.4190
  • 10:$1.7650
  • 1:$1.9700
FCD380N60E
DISTI # FCD380N60EDKR-ND		ON SemiconductorMOSFET N CH 600V 10.2A DPAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3735In Stock
  • 1000:$0.9660
  • 500:$1.1659
  • 100:$1.4190
  • 10:$1.7650
  • 1:$1.9700
FCD380N60E
DISTI # FCD380N60ETR-ND		ON SemiconductorMOSFET N CH 600V 10.2A DPAK
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 5000:$0.8408
  • 2500:$0.8732
FCD380N60E
DISTI # 32702549		ON SemiconductorTrans MOSFET N-CH 600V 10.2A 3-Pin(2+Tab) DPAK T/R2500
  • 9:$1.9742
FCD380N60E
DISTI # 32711099		ON SemiconductorTrans MOSFET N-CH 600V 10.2A 3-Pin(2+Tab) DPAK T/R2500
  • 2500:$0.8219
FCD380N60E
DISTI # FCD380N60E		ON SemiconductorTrans MOSFET N-CH 600V 10.2A 3-Pin DPAK T/R (Alt: FCD380N60E)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.7139
  • 15000:€0.7649
  • 10000:€0.8239
  • 5000:€0.8919
  • 2500:€1.0709
FCD380N60E
DISTI # FCD380N60E		ON SemiconductorTrans MOSFET N-CH 600V 10.2A 3-Pin DPAK T/R - Tape and Reel (Alt: FCD380N60E)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.7599
  • 15000:$0.7789
  • 10000:$0.7889
  • 5000:$0.7999
  • 2500:$0.8049
FCD380N60E
DISTI # FCD380N60E		ON SemiconductorTrans MOSFET N-CH 600V 10.2A 3-Pin DPAK T/R (Alt: FCD380N60E)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
  • 125000:$1.0098
  • 62500:$1.0267
  • 25000:$1.0621
  • 12500:$1.1000
  • 7500:$1.1407
  • 5000:$1.1846
  • 2500:$1.2320
FCD380N60E
DISTI # 46AC0750		ON SemiconductorMOSFET, N-CH, 600V, 10.2A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:10.2A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.32ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes2057
  • 1000:$1.0500
  • 500:$1.2400
  • 250:$1.3200
  • 100:$1.3900
  • 50:$1.4900
  • 25:$1.6000
  • 10:$1.7000
  • 1:$1.9800
FCD380N60E
DISTI # 63W2839		ON SemiconductorSF2 600V 380MOHM E DPAK / REEL0
  • 25000:$0.6730
  • 10000:$0.6930
  • 2500:$0.7190
  • 1:$0.7250
FCD380N60E
DISTI # 512-FCD380N60E		ON SemiconductorMOSFET 600V N-Channel MOSFET
RoHS: Compliant		2416
  • 1:$1.8100
  • 10:$1.5400
  • 100:$1.2300
  • 500:$1.0700
  • 1000:$0.8930
  • 2500:$0.8800
FCD380N60EFairchild Semiconductor Corporation 828
    FCD380N60EFairchild Semiconductor CorporationPower Field-Effect Transistor, 10.2A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    RoHS: Compliant    		1998
      FCD380N60E
      DISTI # 2825202      		ON SemiconductorMOSFET, N-CH, 600V, 10.2A, TO-252-3
      RoHS: Compliant      		2057
      • 5000:$1.1700
      • 1000:$1.2100
      • 500:$1.3100
      • 250:$1.5900
      • 100:$1.9400
      • 25:$2.8400
      • 5:$3.3100
      FCD380N60E
      DISTI # 2825202      		ON SemiconductorMOSFET, N-CH, 600V, 10.2A, TO-252-34577
      • 500:£0.8240
      • 250:£0.8840
      • 100:£0.9440
      • 10:£1.2200
      • 1:£1.5900
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      INA226AQDGSRQ1

      Mfr.#: INA226AQDGSRQ1

      OMO.#: OMO-INA226AQDGSRQ1-TEXAS-INSTRUMENTS

      		 Current & Power Monitors & Regulators Hi-Side Msmt Bi-Dir Current/Pwr Mon
      DP83TC811SWRNDRQ1

      Mfr.#: DP83TC811SWRNDRQ1

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      NTB082N65S3F

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      		 SUPERFET3 650V D2PAK PKG
      可用性
      庫存:
      Available
      訂購:
      1985
      輸入數量:
      FCD380N60E的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格（美元）
      數量
      單價
      小計金額
      1
      US$1.81
      US$1.81
      10
      US$1.54
      US$15.40
      100
      US$1.23
      US$123.00
      500
      US$1.07
      US$535.00
      1000
      US$0.89
      US$893.00
      由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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