IS29GL256-70DLET-TR

Mfr. #:: IS29GL256-70DLET-TR
製造商:: ISSI
描述:: NOR Flash 256M 2.7-3.6V 70ns Parallel NOR I-Temp
生命週期:: 製造商新產品
數據表:: IS29GL256-70DLET-TR 數據表
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更多信息:: IS29GL256-70DLET-TR 更多信息

產品屬性
屬性值

製造商：: 國際空間站

產品分類：: NOR閃存

RoHS：: Y

安裝方式：: 貼片/貼片

包裝/案例：: BGA-64

系列：: IS29GL256

內存大小：: 256 Mbit

最大時鐘頻率：: 33 MHz

接口類型：: 平行線

組織：: 32 M x 8, 16 M x 16

計時類型：: 異步

數據總線寬度：: 8 bit, 16 bit

電源電壓 - 最小值：: 3 V

電源電壓 - 最大值：: 3.6 V

電源電流 - 最大值：: 45 mA

最低工作溫度：: - 40 C

最高工作溫度：: + 105 C

打包：: 捲軸

速度：: 70 ns

品牌：: 國際空間站

濕氣敏感：: 是的

產品類別：: NOR閃存

出廠包裝數量：: 2500

子類別：: 內存和數據存儲

Tags: IS29GL256-70D, IS29GL256-7, IS29GL2, IS29G, IS29, IS2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IS29GL256-70DLET-TR 更多信息

IS29GL256 Parallel Flash Memory Devices: ISSI IS29GL256 Parallel Flash Memory Devices offer a fast page access time of 20ns with a corresponding random access time as fast as 70ns. These memory devices feature a write buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation. The IS29GL256 devices thus offer faster effective programming time than standard programming algorithms. These memory devices are ideal for embedded applications that require higher density, better performance, and low power consumption.

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