DMN53D0LDW-13

Mfr. #:: DMN53D0LDW-13
製造商:: Diodes Incorporated
描述:: MOSFET N-CHANNEL MOSFET
生命週期:: 製造商新產品
數據表:: DMN53D0LDW-13 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:
更多信息:: DMN53D0LDW-13 更多信息

產品屬性
屬性值

製造商: 二極管公司

產品分類: FET - 陣列

系列: DMN53

打包: 捲帶 (TR) 替代包裝

單位重量: 0.000212 oz

安裝方式: 貼片/貼片

包裝盒: 6-TSSOP, SC-88, SOT-363

技術: 矽

工作溫度: -55°C ~ 150°C (TJ)

安裝型: 表面貼裝

通道數: 2 Channel

供應商-設備-包: SOT-363

配置: 雙重的

FET型: 2 N-Channel (Dual)

最大功率: 310mW

晶體管型: 2 N-Channel

漏源電壓 Vdss: 50V

輸入電容-Ciss-Vds: 46pF @ 25V

FET-Feature: 邏輯電平門

Current-Continuous-Drain-Id-25°C: 360mA

Rds-On-Max-Id-Vgs: 1.6 Ohm @ 500mA, 10V

Vgs-th-Max-Id: 1.5V @ 250μA

柵極電荷-Qg-Vgs: 0.6nC @ 4.5V

鈀功耗: 310 mW

最高工作溫度: + 150 C

最低工作溫度: - 55 C

秋季時間: 11 ns

上升時間: 2.5 ns

VGS-柵極-源極-電壓: 20 V

Id 連續漏極電流: 360 mA

Vds-漏-源-擊穿電壓: 50 V

VGS-th-Gate-Source-Threshold-Voltage: 1.5 V

Rds-On-Drain-Source-Resistance: 4.5 Ohms

晶體管極性: N通道

典型關斷延遲時間: 19 ns

典型開啟延遲時間: 2.7 ns

Qg-門電荷: 0.6 nC

通道模式: 增強

Tags: DMN53D0L, DMN53, DMN5, DMN

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

DMN53D0LDW-13 描述

***et: Transistor MOSFET Array Dual N-CH 50V 360mA 6-Pin SOT-363 T/R

***ical: Trans MOSFET N-CH 50V 0.36A Automotive 6-Pin SOT-363 T/R

***des Inc SCT: N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS

DMN53D0LDW-13 更多信息

DMN53xx N-Channel Enhancement Mode MOSFETs: Diodes Incorporated DMN53xx N-Channel Enhancement Mode MOSFETs are designed to minimize the on-state resistance RDS(ON) while maintaining superior switching performance. ESD protected to 2KV, these new generation MOSFETs feature low on-resistance, very low gate threshold voltage, low input capacitance, fast switching speeds, and low input/output leakage. Qualified to AEC-Q101 Standards for High Reliability, DMN53xx N-Channel Enhancement Mode MOSFETs are ideal for high-efficiency power management applications.

Diodes Inc. DMNxx MOSFETs: Diodes Inc. DMNxx MOSFETs are N-channel devices ideally suited for meeting the requirements of a variety of power management applications. DMNxx MOSFETs offer a variety of package options and a wide range of drain-source voltage values.

Market price

型號	製造商	描述	庫存	價格
DMN53D0LDW-13 DISTI # DMN53D0LDW-13DICT-ND	Diodes Incorporated	MOSFET 2N-CH 50V 0.36A SOT363 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	9990In Stock	1000:$0.0832 500:$0.1223 100:$0.2284 10:$0.4080 1:$0.4500
DMN53D0LDW-13 DISTI # DMN53D0LDW-13DIDKR-ND	Diodes Incorporated	MOSFET 2N-CH 50V 0.36A SOT363 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	9990In Stock	1000:$0.0832 500:$0.1223 100:$0.2284 10:$0.4080 1:$0.4500
DMN53D0LDW-13 DISTI # DMN53D0LDW-13DITR-ND	Diodes Incorporated	MOSFET 2N-CH 50V 0.36A SOT363 RoHS: Compliant Min Qty: 10000 Container: Tape & Reel (TR)	On Order	10000:$0.0539
DMN53D0LDW-13 DISTI # DMN53D0LDW-13	Diodes Incorporated	2N7002 FAMILY SOT363 T&R 10K - Tape and Reel (Alt: DMN53D0LDW-13) RoHS: Not Compliant Min Qty: 10000 Container: Reel	Americas - 0	10000:$0.0369 20000:$0.0352 40000:$0.0335 60000:$0.0320 100000:$0.0313
DMN53D0LDW-7 DISTI # 621-DMN53D0LDW-7	Diodes Incorporated	MOSFET N-Ch 50Vds 20Vgs FET Enh Mode 46pF 1.5Vgs RoHS: Compliant	28616	1:$0.3900 10:$0.2590 100:$0.1080 1000:$0.0740 3000:$0.0580
DMN53D0LDW-13 DISTI # 621-DMN53D0LDW-13	Diodes Incorporated	MOSFET N-CHANNEL MOSFET RoHS: Compliant	0	10000:$0.0490

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