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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| FS100R12PT4BOSA1 DISTI # V36:1790_18205062 | Infineon Technologies AG | IGBT Power Module RoHS: Compliant | 0 | |
| FS100R12PT4BOSA1 DISTI # FS100R12PT4BOSA1-ND | Infineon Technologies AG | IGBT MODULE VCES 600V 100A RoHS: Not compliant Min Qty: 6 Container: Bulk | Temporarily Out of Stock |
|
| FS100R12PT4 DISTI # SP000485594 | Infineon Technologies AG | Trans IGBT Module N-CH 1.2KV 135A 19-Pin (Alt: SP000485594) RoHS: Compliant Min Qty: 1 | Europe - 3 |
|
| FS100R12PT4BOSA1 DISTI # FS100R12PT4BOSA1 | Infineon Technologies AG | MEDIUM POWER ECONO - Trays (Alt: FS100R12PT4BOSA1) RoHS: Compliant Min Qty: 6 Container: Tray | Americas - 18 |
|
| FS100R12PT4 DISTI # FS100R12PT4 | Infineon Technologies AG | Trans IGBT Module N-CH 1.2KV 135A 19-Pin - Bulk (Alt: FS100R12PT4) RoHS: Not Compliant Min Qty: 3 Container: Bulk | Americas - 0 |
|
| FS100R12PT4 DISTI # SP000485594 | Infineon Technologies AG | Trans IGBT Module N-CH 1.2KV 135A 19-Pin (Alt: SP000485594) RoHS: Compliant Min Qty: 1 | Europe - 0 |
|
| FS100R12PT4BOSA1 DISTI # FS100R12PT4BOSA1 | Infineon Technologies AG | MEDIUM POWER ECONO - Bulk (Alt: FS100R12PT4BOSA1) RoHS: Compliant Min Qty: 3 Container: Bulk | Americas - 0 |
|
| FS100R12PT4 DISTI # 84R7213 | Infineon Technologies AG | IGBT Module,Transistor Polarity:N Channel,DC Collector Current:100A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:500W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:20Pins,Product Range:- RoHS Compliant: Yes | 0 | |
| FS100R12PT4 DISTI # 726-FS100R12PT4 | Infineon Technologies AG | IGBT Modules 3 PHASE POWER BRIDGE RoHS: Compliant | 4 |
|
| FS100R12PT4 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 135A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant | 1611 |
|
| FS100R12PT4BOSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 135A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant | 1 |
|
| 圖片 | 型號 | 描述 |
|---|---|---|
|
Mfr.#: FS100R12KT4G_B11 OMO.#: OMO-FS100R12KT4G-B11 |
IGBT Modules N-CH 1.2KV 100A |
|
Mfr.#: FS100R12KT4PB11BPSA1 OMO.#: OMO-FS100R12KT4PB11BPSA1 |
IGBT Modules LOW POWER ECONO |
|
|
Mfr.#: FS100R17N3E4B11BOSA1 |
IGBT MODULE VCES 600V 100A |
|
|
Mfr.#: FS100R06KE3BOSA1 |
IGBT MODULE VCES 600V 100A |
|
|
Mfr.#: FS100R12KE3G OMO.#: OMO-FS100R12KE3G-1190 |
全新原裝 |
|
|
Mfr.#: FS100R12KS4BOSA1 |
IGBT MODULE VCES 600V 100A |
|
|
Mfr.#: FS100R12PT4BOSA1 |
IGBT MODULE VCES 600V 100A |
|
|
Mfr.#: FS100R12PT4 OMO.#: OMO-FS100R12PT4-125 |
IGBT Modules 3 PHASE POWER BRIDGE |
|
|
Mfr.#: FS100R12KE3 OMO.#: OMO-FS100R12KE3-125 |
IGBT Modules 1200V 100A 3-PHASE |
|
|
Mfr.#: FS100R12N2T4B11BOSA1 |
LOW POWER ECONO |