GS-065-008-1-L

GS-065-008-1-L
Mfr. #:
GS-065-008-1-L
製造商:
GaN Systems
描述:
MOSFET 650V, 8 A, E-Mode GaN, Engineer Samples
生命週期:
製造商新產品
數據表:
GS-065-008-1-L 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
GS-065-008-1-L 更多信息
產品屬性
屬性值
製造商:
氮化鎵系統
產品分類:
MOSFET
RoHS:
Y
技術:
氮化鎵矽
安裝方式:
貼片/貼片
包裝/案例:
PDFN-6
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
650 V
Id - 連續漏極電流:
8 A
Rds On - 漏源電阻:
541 mOhms
Vgs th - 柵源閾值電壓:
1.4 V
Vgs - 柵源電壓:
- 10 V to 7 V
Qg - 門電荷:
1.5 nC
最低工作溫度:
- 40 C
最高工作溫度:
+ 150 C
配置:
單身的
頻道模式:
增強
打包:
捲軸
系列:
GS-065
晶體管類型:
1 N-Channel
品牌:
氮化鎵系統
濕氣敏感:
是的
產品類別:
MOSFET
出廠包裝數量:
250
子類別:
MOSFET
第 # 部分別名:
GS-065-008-1-L-E01-MR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
GS-065-0xx 650V Enhancement Mode GaN Transistors
GaN Systems GS-065-0xx 650V Enhancement Mode GaN Transistors allow for high current, high voltage breakdown, and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield.  The GS-065-004-1-L is a bottom-side cooled transistor in a 5×6mm PDFN package that offers low junction-to-case thermal resistance. These features combine to provide very high-efficiency power switching.
圖片 型號 描述
LMG1205YFXR

Mfr.#: LMG1205YFXR

OMO.#: OMO-LMG1205YFXR

Gate Drivers 5A 100V HALF-BRIDGE GATE DRIVER FOR ENH
GS66502B-E01-MR

Mfr.#: GS66502B-E01-MR

OMO.#: OMO-GS66502B-E01-MR

MOSFET 650V Enhancement Mode Transistor
GS66506T-E01-MR

Mfr.#: GS66506T-E01-MR

OMO.#: OMO-GS66506T-E01-MR

MOSFET 650V 22A E-Mode GaN
GS66504B-E01-MR

Mfr.#: GS66504B-E01-MR

OMO.#: OMO-GS66504B-E01-MR

MOSFET 650V 15A E-Mode GaN
SN74LVC1G08DCKR

Mfr.#: SN74LVC1G08DCKR

OMO.#: OMO-SN74LVC1G08DCKR

Logic Gates Single 2-Input Pos
NC7SZ00P5X

Mfr.#: NC7SZ00P5X

OMO.#: OMO-NC7SZ00P5X

Logic Gates UHS 2-Inp NAND Gate
DSC1001DI2-006.7800

Mfr.#: DSC1001DI2-006.7800

OMO.#: OMO-DSC1001DI2-006-7800-MICROCHIP-TECHNOLOGY

Oscillator MEMS 6.78MHz ±25ppm (Stability) 15pF CMOS 55% 1.8V/2.5V/3.3V Automotive 4-Pin QFN SMD Tube
SN74LVC1G08DCKR

Mfr.#: SN74LVC1G08DCKR

OMO.#: OMO-SN74LVC1G08DCKR-TEXAS-INSTRUMENTS

Logic Gates Single 2-Input Pos
GS66502B-E01-MR

Mfr.#: GS66502B-E01-MR

OMO.#: OMO-GS66502B-E01-MR-1190

MOSFET 650V Enhancement Mode Transisto
GS66506T-E01-MR

Mfr.#: GS66506T-E01-MR

OMO.#: OMO-GS66506T-E01-MR-1190

MOSFET 650V 22A E-Mode GaN
可用性
庫存:
506
訂購:
2489
輸入數量:
GS-065-008-1-L的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$5.79
US$5.79
10
US$4.65
US$46.50
100
US$4.24
US$424.00
由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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