IRF6616TR1PBF

Mfr. #:: IRF6616TR1PBF
製造商:: Infineon / IR
描述:: MOSFET MOSFT 40V 106A 5.0mOhm 29nC Qg
生命週期:: 製造商新產品
數據表:: IRF6616TR1PBF 數據表
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HTML Datasheet:: IRF6616TR1PBF Datasheet IRF6616TR1PBF Datasheet (P4-P6)IRF6616TR1PBF Datasheet (P7-P9)IRF6616TR1PBF Datasheet (P10)
ECAD Model:

產品屬性
屬性值

製造商：: 英飛凌

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: DirectFET-MX

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 40 V

Id - 連續漏極電流：: 19 A

Rds On - 漏源電阻：: 6.2 mOhms

Vgs - 柵源電壓：: 20 V

Qg - 門電荷：: 29 nC

Pd - 功耗：: 89 W

配置：: 單身的

打包：: 捲軸

高度：: 0.7 mm

長度：: 6.35 mm

晶體管類型：: 1 N-Channel

寬度：: 5.05 mm

品牌：: 英飛凌/紅外

濕氣敏感：: 是的

產品類別：: MOSFET

出廠包裝數量：: 1000

子類別：: MOSFET

第 # 部分別名：: SP001526896

Tags: IRF6616T, IRF6616, IRF661, IRF66, IRF6, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF6616TR1PBF 描述

***ied Electronics & Automation: MOSFET, N-Ch, VDSS 40V, RDS(ON) 3.7 mOhm, ID 19A, DirectFET

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:15A; On Resistance, Rds(on):6.2mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:DirectFET MX ;RoHS Compliant: Yes

***ernational Rectifier: A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 106 amperes optimized with low on resistance for applications such as active ORing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number

***ment14 APAC: MOSFET, N, DIRECTFET, 40V, MX; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:40V; On Resistance Rds(on):3.7mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.8mW; Transistor Case Style:MX; No. of Pins:5; SVHC:No SVHC (20-Jun-2011); Base Number:6616; Current Id Max:15A; Package / Case:MX; Power Dissipation Pd:2.8mW; Pulse Current Idm:150A; SMD Marking:2.8; Termination Type:SMD; Voltage Vds:40V; Voltage Vds Typ:40V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.25V; Voltage Vgs th Min:1.35V

Market price

型號	製造商	描述	庫存	價格
IRF6616TR1PBF DISTI # IRF6616TR1PBFTR-ND	Infineon Technologies AG	MOSFET N-CH 40V 19A DIRECTFET RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
IRF6616TR1PBF DISTI # IRF6616TR1PBFCT-ND	Infineon Technologies AG	MOSFET N-CH 40V 19A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IRF6616TR1PBF DISTI # IRF6616TR1PBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 40V 19A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IRF6616TR1PBF DISTI # 70018826	Infineon Technologies AG	MOSFET,N-Ch,VDSS 40V,RDS(ON) 3.7 mOhm,ID 19A,DirectFET RoHS: Compliant	0	1000:$1.8400 2000:$1.6700
IRF6616TR1PBF	International Rectifier	* FREE SHIPPING ORDERS OVER $100 *	640	515:$3.5340 230:$3.8874 1:$7.0680
IRF6616TR1PBF DISTI # 1436913	Infineon Technologies AG	RoHS: Compliant	0	1000:$2.5200 500:$2.7100 250:$3.0600 100:$3.4200 10:$4.2300 1:$5.1400

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