IRF7471PBF

Mfr. #:: IRF7471PBF
製造商:: Infineon / IR
描述:: MOSFET 40V 1 N-CH HEXFET 13mOhms 21nC
生命週期:: 製造商新產品
數據表:: IRF7471PBF 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRF7471PBF Datasheet IRF7471PBF Datasheet (P4-P6)IRF7471PBF Datasheet (P7-P8)
ECAD Model:

產品屬性
屬性值

製造商：: 英飛凌

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: SO-8

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 40 V

Id - 連續漏極電流：: 10 A

Rds On - 漏源電阻：: 16 mOhms

Vgs - 柵源電壓：: 20 V

Qg - 門電荷：: 21 nC

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 2.5 W

配置：: 單身的

頻道模式：: 增強

打包：: 管子

高度：: 1.75 mm

長度：: 4.9 mm

晶體管類型：: 1 N-Channel

類型：: 開關管

寬度：: 3.9 mm

品牌：: 英飛凌/紅外

秋季時間：: 4.1 ns

產品類別：: MOSFET

上升時間：: 2.7 ns

出廠包裝數量：: 4085

子類別：: MOSFET

典型關斷延遲時間：: 15 ns

典型的開啟延遲時間：: 12 ns

第 # 部分別名：: SP001563538

單位重量：: 0.019048 oz

Tags: IRF7471, IRF747, IRF74, IRF7, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF7471PBF 描述

***ied Electronics & Automation: MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 13 Milliohms;ID 10A;SO-8;PD 2.5W;VGS +/-20V

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:10A; On Resistance, Rds(on):13mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:40V; On Resistance Rds(on):13mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:10A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Pin Format:1 S; 2 S; 3 S; 4 G; 5 D; 6 D; 7 D; 8 D; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:83A; Row Pitch:6.3mm; SMD Marking:IRF7471PBF; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V

Market price

型號	製造商	描述	庫存	價格
IRF7471PBF DISTI # IRF7471PBF-ND	Infineon Technologies AG	MOSFET N-CH 40V 10A 8-SOIC RoHS: Compliant Min Qty: 4085 Container: Tube	Limited Supply - Call
IRF7471TRPBF DISTI # IRF7471PBFTR-ND	Infineon Technologies AG	MOSFET N-CH 40V 10A 8-SOIC RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	Limited Supply - Call
IRF7471TRPBF DISTI # IRF7471PBFCT-ND	Infineon Technologies AG	MOSFET N-CH 40V 10A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IRF7471TRPBF DISTI # IRF7471PBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 40V 10A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IRF7471PBF DISTI # 70017589	Infineon Technologies AG	MOSFET,Power,N-Ch,VDSS 40V,RDS(ON) 13 Milliohms,ID 10A,SO-8,PD 2.5W,VGS +/-20V RoHS: Compliant	0	1:$1.4500 2:$1.4210 5:$1.3780 10:$1.3200 25:$1.2330
IRF7471PBF DISTI # 1013436	Infineon Technologies AG	MOSFET, N, LOGIC, SO-8 RoHS: Compliant	0	1000:$0.8470 500:$0.9030 250:$0.9590 100:$1.0800 10:$1.4000 1:$2.0300

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