IPD30N06S4L23ATMA2

IPD30N06S4L23ATMA2
Mfr. #:
IPD30N06S4L23ATMA2
製造商:
Infineon Technologies
描述:
MOSFET N-CH 60V 30A TO252-3
生命週期:
製造商新產品
數據表:
IPD30N06S4L23ATMA2 數據表
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ECAD Model:
產品屬性
屬性值
Tags
IPD30N06S4, IPD30N06S, IPD30N06, IPD30N0, IPD30N, IPD30, IPD3, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH 60V 30A Automotive 3-Pin(2+Tab) TO-252 T/R
***ical
Trans MOSFET N-CH 60V 30A Automotive 3-Pin(2+Tab) DPAK T/R
***et
Trans MOSFET N-CH 60V 30A 3-Pin(2+Tab) TO-252 T/R
***Components
MOSFET N-Ch 60V 30A OptiMOS-T2 TO-252
***et Europe
MOSFET N-CH 60V 30A TO252-3
***ronik
N-CH 60V 30A 23mOhm TO252
***ark
Mosfet, Aec-Q101, N-Ch, 60V, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.018Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, AEC-Q101, N-CH, 60V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:38W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS T2 Series; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, AEC-Q101, CA-N, 60V, TO-252; Polarità Transistor:Canale N; Corrente Continua di Drain Id:30A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.018ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.7V; Dissipazione di Potenza Pd:38W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS T2 Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Summary of Features: N-channel - Enhancement mode; AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
型號 製造商 描述 庫存 價格
IPD30N06S4L23ATMA2
DISTI # V72:2272_06391013
Infineon Technologies AGTrans MOSFET N-CH 60V 30A Automotive 3-Pin(2+Tab) DPAK T/R2400
  • 1000:$0.2891
  • 500:$0.3376
  • 250:$0.3570
  • 100:$0.3730
  • 25:$0.5306
  • 10:$0.6486
  • 1:$0.7719
IPD30N06S4L23ATMA2
DISTI # V36:1790_06391013
Infineon Technologies AGTrans MOSFET N-CH 60V 30A Automotive 3-Pin(2+Tab) DPAK T/R0
    IPD30N06S4L23ATMA2
    DISTI # IPD30N06S4L23ATMA2CT-ND
    Infineon Technologies AGMOSFET N-CH 60V 30A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    3084In Stock
    • 1000:$0.3321
    • 500:$0.4151
    • 100:$0.5251
    • 10:$0.6850
    • 1:$0.7800
    IPD30N06S4L23ATMA2
    DISTI # IPD30N06S4L23ATMA2DKR-ND
    Infineon Technologies AGMOSFET N-CH 60V 30A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    3084In Stock
    • 1000:$0.3321
    • 500:$0.4151
    • 100:$0.5251
    • 10:$0.6850
    • 1:$0.7800
    IPD30N06S4L23ATMA2
    DISTI # IPD30N06S4L23ATMA2TR-ND
    Infineon Technologies AGMOSFET N-CH 60V 30A TO252-3
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)
    2500In Stock
    • 12500:$0.2687
    • 5000:$0.2720
    • 2500:$0.2922
    IPD30N06S4L23ATMA2
    DISTI # 31675415
    Infineon Technologies AGTrans MOSFET N-CH 60V 30A Automotive 3-Pin(2+Tab) DPAK T/R2400
    • 1000:$0.2891
    • 500:$0.3376
    • 250:$0.3570
    • 100:$0.3730
    • 25:$0.5306
    • 24:$0.6486
    IPD30N06S4L23ATMA2
    DISTI # IPD30N06S4L23ATMA2
    Infineon Technologies AGTrans MOSFET N-CH 60V 30A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD30N06S4L23ATMA2)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel
    Americas - 0
    • 25000:$0.2429
    • 15000:$0.2479
    • 10000:$0.2559
    • 5000:$0.2659
    • 2500:$0.2759
    IPD30N06S4L23ATMA2
    DISTI # 49AC0292
    Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 60V, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.018ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,Power RoHS Compliant: Yes1579
    • 1000:$0.3110
    • 500:$0.3370
    • 250:$0.3620
    • 100:$0.3880
    • 50:$0.4590
    • 25:$0.5300
    • 10:$0.6010
    • 1:$0.7170
    IPD30N06S4L23ATMA2
    DISTI # 726-IPD30N06S4L23ATM
    Infineon Technologies AGMOSFET MOSFET
    RoHS: Compliant
    4173
    • 1:$0.7100
    • 10:$0.5950
    • 100:$0.3840
    • 1000:$0.3080
    • 2500:$0.2600
    • 10000:$0.2500
    • 25000:$0.2400
    IPD30N06S4L-23
    DISTI # 726-IPD30N06S4L-23
    Infineon Technologies AGMOSFET N-Ch 60V 30A DPAK-2 OptiMOS-T2
    RoHS: Compliant
    0
      IPD30N06S4L23ATMA2
      DISTI # 2839460
      Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 60V, TO-2521578
      • 500:£0.2370
      • 250:£0.2690
      • 100:£0.3020
      • 25:£0.4860
      • 5:£0.5270
      IPD30N06S4L23ATMA2
      DISTI # 2839460
      Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 60V, TO-252
      RoHS: Compliant
      1574
      • 5000:$0.4280
      • 1000:$0.4520
      • 500:$0.4770
      • 250:$0.5520
      • 100:$0.6540
      • 25:$0.8010
      • 5:$0.9190
      圖片 型號 描述
      IPD30N06S4L23ATMA2

      Mfr.#: IPD30N06S4L23ATMA2

      OMO.#: OMO-IPD30N06S4L23ATMA2

      MOSFET MOSFET
      IPD30N06S2L23ATMA1

      Mfr.#: IPD30N06S2L23ATMA1

      OMO.#: OMO-IPD30N06S2L23ATMA1

      MOSFET N-Ch 55V 30A DPAK-2 OptiMOS
      IPD30N06S2L23ATMA1

      Mfr.#: IPD30N06S2L23ATMA1

      OMO.#: OMO-IPD30N06S2L23ATMA1-INFINEON-TECHNOLOGIES

      MOSFET N-CH 55V 30A TO252-3
      IPD30N06S215ATMA1

      Mfr.#: IPD30N06S215ATMA1

      OMO.#: OMO-IPD30N06S215ATMA1-1190

      MOSFET N-Ch 55V 30A DPAK-2 OptiMOS
      IPD30N06S4L23ATMA1

      Mfr.#: IPD30N06S4L23ATMA1

      OMO.#: OMO-IPD30N06S4L23ATMA1-INFINEON-TECHNOLOGIES

      MOSFET N-CH 60V 30A TO252-3
      IPD30N06S215

      Mfr.#: IPD30N06S215

      OMO.#: OMO-IPD30N06S215-1190

      全新原裝
      IPD30N06S223ATMA2

      Mfr.#: IPD30N06S223ATMA2

      OMO.#: OMO-IPD30N06S223ATMA2-INFINEON-TECHNOLOGIES

      MOSFET N-CH 55V 30A TO252-3
      IPD30N06S2L13ATMA1

      Mfr.#: IPD30N06S2L13ATMA1

      OMO.#: OMO-IPD30N06S2L13ATMA1-1190

      - Bulk (Alt: IPD30N06S2L13ATMA1)
      IPD30N06S3-24

      Mfr.#: IPD30N06S3-24

      OMO.#: OMO-IPD30N06S3-24-1190

      Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) TO-252 - Bulk (Alt: IPD30N06S3-24)
      IPD30N06S3L-20

      Mfr.#: IPD30N06S3L-20

      OMO.#: OMO-IPD30N06S3L-20-1190

      - Bulk (Alt: IPD30N06S3L-20)
      可用性
      庫存:
      Available
      訂購:
      2000
      輸入數量:
      IPD30N06S4L23ATMA2的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格(美元)
      數量
      單價
      小計金額
      1
      US$0.36
      US$0.36
      10
      US$0.34
      US$3.42
      100
      US$0.32
      US$32.40
      500
      US$0.31
      US$153.00
      1000
      US$0.29
      US$288.00
      由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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