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FCPF7N60YDTU

FCPF7N60YDTU
Mfr. #:
FCPF7N60YDTU
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET 600V N-Channel SuperFET
生命週期:
製造商新產品
數據表:
FCPF7N60YDTU 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-220-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
600 V
Id - 連續漏極電流：
7 A
Rds On - 漏源電阻：
600 mOhms
Vgs th - 柵源閾值電壓：
5 V
Vgs - 柵源電壓：
30 V
Qg - 門電荷：
30 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
31 W
配置：
單身的
頻道模式：
增強
打包：
管子
高度：
16.3 mm
長度：
10.67 mm
系列：
FCPF7N60
晶體管類型：
1 N-Channel
寬度：
4.7 mm
品牌：
安森美半導體/飛兆半導體
正向跨導 - 最小值：
6 S
秋季時間：
32 ns
產品類別：
MOSFET
上升時間：
55 ns
出廠包裝數量：
800
子類別：
MOSFET
典型關斷延遲時間：
75 ns
典型的開啟延遲時間：
35 ns
單位重量：
0.090478 oz
Tags
FCPF7, FCPF, FCP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 7 A, 600 mΩ, TO-220F
***et
Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220F Rail
***r Electronics
Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***emi
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 7 A, 600 mΩ, TO-220F
***Yang
Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):530mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:31W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:7A; Package / Case:TO-220F; Power Dissipation Pd:31W; Power Dissipation Pd:31W; Pulse Current Idm:30A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***emi
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 6.8 A, 520 mΩ, TO-220F
***Yang
Trans MOSFET N-CH 600V 6.8A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 6.8A I(D), 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET,N CH,600V,6.8A,TO220F; Transistor Polarity:N Channel; Continuous Drain Current Id:6.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.46ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:30.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)
***rchild Semiconductor
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***icroelectronics
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in TO-220FP package
***ure Electronics
N-Channel 600 V 600 mOhm Flange Mount MDmesh II Plus Power Mosfet -TO-220FP
***ical
Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220FP Tube
***ark
MOSFET, N-CH, 600V, 7.5A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:7.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***emi
N-Channel Power MOSFET, SUPERFET® II, FAST, 600 V, 7.4 A, 600 mΩ, TO-220F
***ark
SuperFET2, 600mohm, TO220F, Zener - TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD
*** Stop Electro
Power Field-Effect Transistor, 7.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***Yang
Trans MOSFET N-CH 600V 7.4A 3-Pin TO-220F Tube - Rail/Tube
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***el Electronic
VISHAY SIHF7N60E-E3 MOSFET Transistor, N Channel, 7 A, 600 V, 0.5 ohm, 10 V, 2 V
***ure Electronics
SiHF7N60E Series 600 V 7 A 31 W Through Hole Power Mosfet - TO-220FP
***et
Trans MOSFET N-CH 600V 7A 3-Pin TO-220 Full-Pak
***nell
MOSFET, N-CH, 600V, 7A, TO220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:31W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
***icroelectronics
N-channel 600 V, 0.57 Ohm, 8 A, TO-220FP FDmesh(TM) II Power MOSFET
***et
Trans MOSFET N-CH 600V 8A 3-Pin(3+Tab) TO-220FP Tube
***r Electronics
Power Field-Effect Transistor, 8A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET, N CH, 600V, 8A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
***nell
MOSFET, N CH, 600V, 8A, TO 220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 8A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.57ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 25W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C
型號 製造商 描述 庫存 價格
FCPF7N60YDTU
DISTI # FCPF7N60YDTU-ND		ON SemiconductorMOSFET N-CH 600V 7A TO-220F
RoHS: Compliant
Min Qty: 800
Container: Tube		Temporarily Out of Stock
  • 800:$1.0428
FCPF7N60YDTU
DISTI # FCPF7N60YDTU		ON SemiconductorTrans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube (Alt: FCPF7N60YDTU)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 800:$0.7839
  • 1600:$0.7789
  • 3200:$0.7689
  • 4800:$0.7589
  • 8000:$0.7399
FCPF7N60YDTUFairchild Semiconductor CorporationPower Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		3483
  • 1000:$0.8800
  • 500:$0.9300
  • 100:$0.9700
  • 25:$1.0100
  • 1:$1.0900
FCPF7N60YDTU
DISTI # 512-FCPF7N60YDTU		ON SemiconductorMOSFET 600V N-Channel SuperFET
RoHS: Compliant		147
  • 1:$1.7700
  • 10:$1.5000
  • 100:$1.2000
  • 500:$1.0600
FCPF7N60YDTU
DISTI # 8647938P		ON SemiconductorMOSFET N-CH 600V 7A SUPERFET TO220F, TU650
  • 25:£0.5340
圖片 型號 描述
MKS2B041001C00KSSD

Mfr.#: MKS2B041001C00KSSD

OMO.#: OMO-MKS2B041001C00KSSD-800

 Film Capacitors 1uF 50 Volts 10%
可用性
庫存:
147
訂購:
2130
輸入數量:
FCPF7N60YDTU的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$1.59
US$1.59
10
US$1.35
US$13.50
100
US$1.08
US$108.00
500
US$0.95
US$475.50
1000
US$0.79
US$788.00
2500
US$0.73
US$1 832.50
5000
US$0.71
US$3 530.00
10000
US$0.68
US$6 790.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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