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SISH434DN-T1-GE3

SISH434DN-T1-GE3
Mfr. #:
SISH434DN-T1-GE3
製造商:
Vishay / Siliconix
描述:
MOSFET 40V Vds; +/-20V Vgs PowerPAK 1212-8SH
生命週期:
製造商新產品
數據表:
SISH434DN-T1-GE3 數據表
交貨:
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支付:
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HTML Datasheet:
SISH434DN-T1-GE3 DatasheetSISH434DN-T1-GE3 Datasheet (P4-P6)SISH434DN-T1-GE3 Datasheet (P7-P8)
ECAD Model:
更多信息:
SISH434DN-T1-GE3 更多信息
產品屬性
屬性值
製造商：
威世
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
PowerPAK1212-8
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
40 V
Id - 連續漏極電流：
35 A
Rds On - 漏源電阻：
7.6 mOhms
Vgs th - 柵源閾值電壓：
1.2 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
40 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
52 W
配置：
單身的
頻道模式：
增強
商品名：
TrenchFET、PowerPAK
打包：
捲軸
系列：
情報局
晶體管類型：
1 N-Channel
品牌：
威世 / Siliconix
正向跨導 - 最小值：
60 S
秋季時間：
12 ns
產品類別：
MOSFET
上升時間：
15 ns
出廠包裝數量：
3000
子類別：
MOSFET
典型關斷延遲時間：
25 ns
典型的開啟延遲時間：
20 ns
Tags
SISH4, SISH, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
型號 製造商 描述 庫存 價格
SISH434DN-T1-GE3
DISTI # V99:2348_22587813		Vishay IntertechnologiesN-Chanel 40 V (D-S) MOSFET PowerPAK 1212-8SH 300M sh ch , 7.6 m @ 10V m @ 7.5V 9.2 m @ 4.5V5730
  • 1000:$0.5981
  • 500:$0.7357
  • 100:$0.9514
  • 10:$1.2002
  • 1:$1.4873
SISH434DN-T1-GE3
DISTI # SISH434DN-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CHAN 40V PPAK 1212-8SH
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5864In Stock
  • 1000:$0.5483
  • 500:$0.6945
  • 100:$0.8408
  • 10:$1.0780
  • 1:$1.2100
SISH434DN-T1-GE3
DISTI # SISH434DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CHAN 40V PPAK 1212-8SH
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5864In Stock
  • 1000:$0.5483
  • 500:$0.6945
  • 100:$0.8408
  • 10:$1.0780
  • 1:$1.2100
SISH434DN-T1-GE3
DISTI # SISH434DN-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CHAN 40V PPAK 1212-8SH
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 6000:$0.4732
  • 3000:$0.4969
SISH434DN-T1-GE3
DISTI # 31018373		Vishay IntertechnologiesN-Chanel 40 V (D-S) MOSFET PowerPAK 1212-8SH 300M sh ch , 7.6 m @ 10V m @ 7.5V 9.2 m @ 4.5V5730
  • 1000:$0.6430
  • 500:$0.7909
  • 100:$1.0228
  • 14:$1.2861
SISH434DN-T1-GE3
DISTI # SISH434DN-T1-GE3		Vishay IntertechnologiesN-CHANNEL 40-V (D-S) MOSFET - Tape and Reel (Alt: SISH434DN-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$0.4329
  • 30000:$0.4449
  • 18000:$0.4569
  • 12000:$0.4769
  • 6000:$0.4909
SISH434DN-T1-GE3
DISTI # 99AC9584		Vishay IntertechnologiesMOSFET, N-CH, 35A, 40V, POWERPAK 1212,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0063ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power RoHS Compliant: Yes50
  • 500:$0.7680
  • 250:$0.8790
  • 100:$0.9900
  • 50:$1.0800
  • 25:$1.1600
  • 10:$1.2500
  • 1:$1.4100
SISH434DN-T1-GE3
DISTI # 81AC3496		Vishay IntertechnologiesN-CHANNEL 40-V (D-S) MOSFET0
  • 10000:$0.4300
  • 6000:$0.4400
  • 4000:$0.4570
  • 2000:$0.5070
  • 1000:$0.5580
  • 1:$0.5820
SISH434DN-T1-GE3
DISTI # 78-SISH434DN-T1-GE3		Vishay IntertechnologiesMOSFET 40V Vds,+/-20V Vgs PowerPAK 1212-8SH
RoHS: Compliant		5976
  • 1:$1.1800
  • 10:$0.9730
  • 100:$0.7460
  • 500:$0.6420
  • 1000:$0.5060
  • 3000:$0.4730
  • 6000:$0.4490
  • 9000:$0.4320
SISH434DN-T1-GE3
DISTI # 3019132		Vishay IntertechnologiesMOSFET, N-CH, 35A, 40V, POWERPAK 1212
RoHS: Compliant		50
  • 5000:$0.6420
  • 1000:$0.6570
  • 500:$0.8110
  • 250:$0.8890
  • 100:$0.9660
  • 25:$1.2500
  • 5:$1.3700
SISH434DN-T1-GE3
DISTI # 3019132		Vishay IntertechnologiesMOSFET, N-CH, 35A, 40V, POWERPAK 121250
  • 500:£0.5570
  • 250:£0.6350
  • 100:£0.7130
  • 25:£0.8950
  • 5:£0.9890
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可用性
庫存:
Available
訂購:
1988
輸入數量:
SISH434DN-T1-GE3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$1.18
US$1.18
10
US$0.97
US$9.73
100
US$0.75
US$74.60
500
US$0.64
US$321.00
1000
US$0.51
US$506.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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