IPW60R125P6XKSA1

IPW60R125P6XKSA1
Mfr. #:
IPW60R125P6XKSA1
製造商:
Infineon Technologies
描述:
MOSFET HIGH POWER PRICE/PERFORM
生命週期:
製造商新產品
數據表:
IPW60R125P6XKSA1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
IPW60R125P6XKSA1 更多信息
產品屬性
屬性值
製造商:
英飛凌
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
通孔
包裝/案例:
TO-247-3
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
600 V
Id - 連續漏極電流:
30 A
Rds On - 漏源電阻:
113 mOhms
Vgs th - 柵源閾值電壓:
3.5 V
Vgs - 柵源電壓:
20 V
Qg - 門電荷:
56 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
Pd - 功耗:
219 W
配置:
單身的
頻道模式:
增強
商品名:
酷摩
打包:
管子
高度:
21.1 mm
長度:
16.13 mm
系列:
CoolMOS P6
晶體管類型:
1 N-Channel
寬度:
5.21 mm
品牌:
英飛凌科技
秋季時間:
5 ns
產品類別:
MOSFET
上升時間:
9 ns
出廠包裝數量:
240
子類別:
MOSFET
典型關斷延遲時間:
44 ns
典型的開啟延遲時間:
14 ns
第 # 部分別名:
IPW60R125P6 SP001114656
單位重量:
1.340411 oz
Tags
IPW60R125P, IPW60R125, IPW60R12, IPW60R1, IPW60, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 125 mOhm 56 nC CoolMOS™ Power Mosfet - TO-247-3
***et
Transistor MOSFET N-Channel 600V 30A 3-Pin TO-247 Tube
***ark
Mosfet, N-Ch, 600V, 30A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.113Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes
***ineon SCT
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO247-3, RoHS
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
***ure Electronics
Single N-Channel 600 V 99 mOhm 70 nC CoolMOS™ Power Mosfet - TO-247-3
***ark
Mosfet, N-Ch, 600V, 37.9A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:37.9A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.089Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ineon SCT
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO247-3, RoHS
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
***icroelectronics
N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in TO-247 package
***ure Electronics
N-Channel 600 V 93 mOhm Flange Mount MDmesh DM2 Power Mosfet - TO-247
***ark
Mosfet, N-Ch, 600V, 34A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:34A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.085Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes
***icroelectronics
N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in TO-247 package
***ure Electronics
N-Channel 600 V 110 mOhm Flange Mount Mdmesh DM2 Power Mosfet - TO-247
***ark
Mosfet, N-Ch, 600V, 28A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.094Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes
***emi
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 29 A, 125 mΩ, TO-247
*** Electronics
FAIRCHILD SEMICONDUCTOR FCH125N60E MOSFET Transistor, N Channel, 29 A, 600 V, 0.102 ohm, 10 V, 3.5 VNew
***nell
MOSFET, N-CH, 600V, 29A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 29A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.102ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V;
***r Electronics
Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***el Electronic
Aluminum Electrolytic Capacitors 100μF Radial, Can - SMD ±20% Tape & Reel (TR) TG 0.402 10.20mm Surface Mount Automotive 150mA CAP ALUM 100UF 20% 63V SMD
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET II MOSFET series. Noted by the “E” part number suffix, this family helps manage EMI issues and allows for easier designimplementation. For faster switching in applications where switching losses must be at an absolute minimum, please consider the SuperFET II MOSFET series.
***ical
Trans MOSFET N-CH 650V 38A 3-Pin(3+Tab) TO-247 Tube
***ark
Mosfet, N-Ch, 650V, 38A, To-247-3; Transistor Polarity:n Channel; Continuous Drain Current Id:38A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.089Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon SCT
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO247-3, RoHS
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
***icroelectronics
N-channel 650 V, 0.087 Ohm typ., 32 A MDmesh M2 Power MOSFET in TO-220 package
***r Electronics
Power Field-Effect Transistor, 32A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***nell
MOSFET, N-CH, 650V, 32A, 250W, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 32A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.087ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
型號 製造商 描述 庫存 價格
IPW60R125P6XKSA1
DISTI # V99:2348_06377537
Infineon Technologies AGTrans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
20
  • 1200:$2.2870
  • 720:$2.7130
  • 240:$3.1780
  • 10:$3.6610
  • 1:$4.7300
IPW60R125P6XKSA1
DISTI # IPW60R125P6XKSA1-ND
Infineon Technologies AGMOSFET N-CH 600V TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube
80In Stock
  • 2640:$2.3980
  • 720:$2.9930
  • 240:$3.5159
  • 25:$4.0568
  • 10:$4.2910
  • 1:$4.7800
IPW60R125P6XKSA1
DISTI # 32892551
Infineon Technologies AGTrans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
240
  • 5000:$2.0691
  • 2500:$2.1582
  • 1000:$2.2671
  • 500:$2.6928
  • 250:$2.9997
  • 100:$3.1581
  • 10:$3.6432
IPW60R125P6XKSA1
DISTI # 26197262
Infineon Technologies AGTrans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
20
  • 1200:$2.4585
  • 720:$2.9165
  • 240:$3.4163
  • 10:$3.9356
  • 3:$4.6225
IPW60R125P6XKSA1
DISTI # IPW60R125P6XKSA1
Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Rail/Tube (Alt: IPW60R125P6XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
  • 2400:$1.9900
  • 960:$2.0900
  • 1440:$2.0900
  • 480:$2.1900
  • 240:$2.2900
IPW60R125P6XKSA1
DISTI # IPW60R125P6XKSA1
Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Bulk (Alt: IPW60R125P6XKSA1)
RoHS: Compliant
Min Qty: 167
Container: Bulk
Americas - 0
  • 835:$1.8900
  • 1670:$1.8900
  • 334:$1.9900
  • 501:$1.9900
  • 167:$2.0900
IPW60R125P6XKSA1
DISTI # IPW60R125P6
Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: IPW60R125P6)
RoHS: Compliant
Min Qty: 240
Asia - 0
    IPW60R125P6XKSA1
    DISTI # SP001114656
    Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: SP001114656)
    RoHS: Compliant
    Min Qty: 1
    Europe - 0
    • 1000:€1.7900
    • 500:€1.8900
    • 50:€1.9900
    • 100:€1.9900
    • 25:€2.0900
    • 10:€2.1900
    • 1:€2.3900
    IPW60R125P6XKSA1
    DISTI # 12AC9736
    Infineon Technologies AGMOSFET, N-CH, 600V, 30A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.113ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes469
    • 500:$2.7500
    • 250:$3.0600
    • 100:$3.2200
    • 50:$3.3900
    • 25:$3.5500
    • 10:$3.7200
    • 1:$4.3700
    IPW60R125P6
    DISTI # 726-IPW60R125P6
    Infineon Technologies AGMOSFET HIGH POWER PRICE/PERFORM
    RoHS: Compliant
    117
    • 1:$4.3300
    • 10:$3.6800
    • 100:$3.1900
    • 250:$3.0300
    • 500:$2.7200
    IPW60R125P6XKSA1
    DISTI # 726-IPW60R125P6XKSA1
    Infineon Technologies AGMOSFET HIGH POWER PRICE/PERFORM
    RoHS: Compliant
    242
    • 1:$4.3300
    • 10:$3.6800
    • 100:$3.1900
    • 250:$3.0300
    • 500:$2.7200
    • 1000:$2.2900
    • 2500:$2.1800
    IPW60R125P6XKSA1Infineon Technologies AGInfineon CoolMOS™ N-Channel Power MOSFETIPW60R125P6 - TO247
    RoHS: Not Compliant
    200
    • 1000:$1.9700
    • 500:$2.0800
    • 100:$2.1600
    • 25:$2.2600
    • 1:$2.4300
    IPW60R125P6XKSA1
    DISTI # IPW60R125P6XKSA1
    Infineon Technologies AGTransistor: N-MOSFET,unipolar,600V,30A,219W,PG-TO247-3171
    • 1:$4.5600
    • 3:$3.9300
    • 10:$3.1500
    • 30:$2.7300
    IPW60R125P6XKSA1
    DISTI # 2709928
    Infineon Technologies AGMOSFET, N-CH, 600V, 30A, TO-247
    RoHS: Compliant
    469
    • 1200:$3.8300
    • 720:$4.5400
    • 240:$5.6000
    • 10:$6.8400
    • 1:$7.6500
    IPW60R125P6XKSA1
    DISTI # 2709928
    Infineon Technologies AGMOSFET, N-CH, 600V, 30A, TO-247471
    • 500:£2.1200
    • 250:£2.3700
    • 100:£2.4900
    • 10:£2.8600
    • 1:£3.7600
    圖片 型號 描述
    AT24C32E-SSHM-T

    Mfr.#: AT24C32E-SSHM-T

    OMO.#: OMO-AT24C32E-SSHM-T

    EEPROM 1.7-3.6V, 1MHz Ind Tmp 8-SOIC-N
    FSBB20CH60C

    Mfr.#: FSBB20CH60C

    OMO.#: OMO-FSBB20CH60C

    Motor / Motion / Ignition Controllers & Drivers 600V 20A SPM
    BC817-40Q-7-F

    Mfr.#: BC817-40Q-7-F

    OMO.#: OMO-BC817-40Q-7-F

    Bipolar Transistors - BJT SS Low Sat Transistor
    BAW56LT1G

    Mfr.#: BAW56LT1G

    OMO.#: OMO-BAW56LT1G

    Diodes - General Purpose, Power, Switching 70V 200mA
    SG3525AN

    Mfr.#: SG3525AN

    OMO.#: OMO-SG3525AN

    Switching Controllers Voltage Mode w/Sync
    MBR0520L

    Mfr.#: MBR0520L

    OMO.#: OMO-MBR0520L

    Schottky Diodes & Rectifiers Schottky Power Rect .5a
    LTST-C194TBKT

    Mfr.#: LTST-C194TBKT

    OMO.#: OMO-LTST-C194TBKT

    Standard LEDs - SMD Blue 470nm 28mcd 20mA
    AT24C32E-SSHM-T

    Mfr.#: AT24C32E-SSHM-T

    OMO.#: OMO-AT24C32E-SSHM-T-MICROCHIP-TECHNOLOGY

    EEPROM 1.7-3.6V, 1MHz Ind Tmp 8-SOIC-N
    LTST-C194TBKT

    Mfr.#: LTST-C194TBKT

    OMO.#: OMO-LTST-C194TBKT-LITE-ON

    Standard LEDs - SMD Blue 470nm 28mcd 20mA
    FSBB20CH60C

    Mfr.#: FSBB20CH60C

    OMO.#: OMO-FSBB20CH60C-ON-SEMICONDUCTOR

    MODULE SPM 600V 20A SPMCC
    可用性
    庫存:
    242
    訂購:
    2225
    輸入數量:
    IPW60R125P6XKSA1的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格(美元)
    數量
    單價
    小計金額
    1
    US$4.33
    US$4.33
    10
    US$3.68
    US$36.80
    100
    US$3.19
    US$319.00
    250
    US$3.03
    US$757.50
    500
    US$2.72
    US$1 360.00
    1000
    US$2.29
    US$2 290.00
    2500
    US$2.18
    US$5 450.00
    5000
    US$2.09
    US$10 450.00
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