AS4C64M4SA-7TIN

AS4C64M4SA-7TIN
Mfr. #:
AS4C64M4SA-7TIN
製造商:
Alliance Memory
描述:
DRAM 256Mb, 3.3V, 166Mhz 64M x 4 SDRAM
生命週期:
製造商新產品
數據表:
AS4C64M4SA-7TIN 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
AS4C64M4SA-7TIN 更多信息
產品屬性
屬性值
製造商:
聯盟記憶
產品分類:
動態隨機存取存儲器
RoHS:
Y
系列:
AS4C64M4SA
打包:
托盤
品牌:
聯盟記憶
濕氣敏感:
是的
產品類別:
動態隨機存取存儲器
出廠包裝數量:
108
子類別:
內存和數據存儲
Tags
AS4C64M4SA-7, AS4C64M4, AS4C6, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    A***i
    A***i
    IE

    colour coding don't match the one on the box, different number of colour strips, except that all ok

    2019-09-06
    S***v
    S***v
    RU

    The goods have not arrived. Probably blame the post of russia. there is no local post office. Quality cannot be assessed. Disappointment.

    2019-09-22
    V***d
    V***d
    RU

    Works

    2019-09-07
***metry Electronics
SDRAM 256MB 166MHz 3.3V 64M x 4 54pin TSOP II
***i-Key
54PIN TSOP II
AS4C Series SDRAM
Alliance Memory AS4C Series SDRAM is high-speed CMOS synchronous DRAM containing 64, 128, or 256Mbits. They are internally configured as 4 Banks of 1M, 2M, or 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented, accesses start at selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.Learn More
圖片 型號 描述
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OMO.#: OMO-AS4C64M16D2A-25BCN

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Mfr.#: AS4C64M8D2-25BIN

OMO.#: OMO-AS4C64M8D2-25BIN

DRAM 512M, 1.8V, 400Mhz 64M x 8 DDR2
AS4C64M16MD1-6BINTR

Mfr.#: AS4C64M16MD1-6BINTR

OMO.#: OMO-AS4C64M16MD1-6BINTR-ALLIANCE-MEMORY

DRAM 1G 1.8V 166Mhz 64M x 16 Mobile DDR
AS4C64M16D3L-12BCNTR

Mfr.#: AS4C64M16D3L-12BCNTR

OMO.#: OMO-AS4C64M16D3L-12BCNTR-ALLIANCE-MEMORY

IC DRAM 1G PARALLEL 96FBGA
AS4C64M8S-7TCN

Mfr.#: AS4C64M8S-7TCN

OMO.#: OMO-AS4C64M8S-7TCN-ALLIANCE-MEMORY

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AS4C64M8D1-5BIN

Mfr.#: AS4C64M8D1-5BIN

OMO.#: OMO-AS4C64M8D1-5BIN-ALLIANCE-MEMORY

DRAM 512M, 2.5V, 200Mhz 64M x 8 DDR1
AS4C64M16D3B-12BCNTR

Mfr.#: AS4C64M16D3B-12BCNTR

OMO.#: OMO-AS4C64M16D3B-12BCNTR-ALLIANCE-MEMORY

IC DRAM 1G PARALLEL 96FBGA
AS4C64M16D3LA-12BIN

Mfr.#: AS4C64M16D3LA-12BIN

OMO.#: OMO-AS4C64M16D3LA-12BIN-ALLIANCE-MEMORY

IC DRAM 1G PARALLEL 96FBGA
AS4C64M16MD1-5BCN

Mfr.#: AS4C64M16MD1-5BCN

OMO.#: OMO-AS4C64M16MD1-5BCN-ALLIANCE-MEMORY

IC DRAM 1G PARALLEL 60FBGA
AS4C64M8D3L-12BIN

Mfr.#: AS4C64M8D3L-12BIN

OMO.#: OMO-AS4C64M8D3L-12BIN-ALLIANCE-MEMORY

IC DRAM 512M PARALLEL 78FBGA
可用性
庫存:
Available
訂購:
3000
輸入數量:
AS4C64M4SA-7TIN的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$4.37
US$4.37
10
US$3.96
US$39.60
25
US$3.87
US$96.75
50
US$3.85
US$192.50
100
US$3.45
US$345.00
250
US$3.44
US$860.00
500
US$3.31
US$1 655.00
1000
US$3.01
US$3 010.00
2000
US$2.87
US$5 740.00
由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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