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QPD1010

QPD1010
Mfr. #:
QPD1010
製造商:
Qorvo
描述:
RF JFET Transistors DC-4GHz 10W 28-50V SSG 25dB PAE 70% GaN
生命週期:
製造商新產品
數據表:
QPD1010 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
QPD1010 更多信息
產品屬性
屬性值
製造商：
科沃
產品分類：
射頻 JFET 晶體管
RoHS：
Y
晶體管類型：
HEMT
技術：
氮化鎵碳化矽
獲得：
24.7 dB
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
50 V
Vgs - 柵源擊穿電壓：
145 V
Id - 連續漏極電流：
400 mA
輸出功率：
11 W
最低工作溫度：
- 40 C
最高工作溫度：
+ 85 C
Pd - 功耗：
13.5 W
安裝方式：
貼片/貼片
包裝/案例：
QFN-16
打包：
胡扯
配置：
單身的
工作頻率：
4 GHz
工作溫度範圍：
- 40 C to + 85 C
系列：
QPD
品牌：
科沃
開發套件：
QPD1010-EVB1
濕氣敏感：
是的
產品類別：
射頻 JFET 晶體管
出廠包裝數量：
50
子類別：
晶體管
Vgs th - 柵源閾值電壓：
- 2.8 V
第 # 部分別名：
1132873
單位重量：
0.081130 oz
Tags
QPD101, QPD10, QPD1, QPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC - 4.0 GHz, 10 W, 50 V, 3 x 3 mm, GaN
QPD1009 & QPD1010 GaN RF Transistors
Qorvo QPD1009 & QPD1010 GaN RF Transistors are discrete GaN on SiC HEMTs which operate from DC to 4GHz and constructed with Qorvo's proven QGaN25HV process. This process features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization potentially lowers system cost in terms of fewer amplifier line-ups and lower thermal management costs.
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
GaN Transistor Solutions for Sub 6GHz 5G
Qorvo GaN Transistor Solutions for Sub 6GHz 5G are a broad portfolio of gallium nitride (GaN) discrete transistor products. The devices have varying levels of power, voltage, and frequency ratings in die-level and packaged solutions. These products provide high GaN performance plus the convenience of industry-standard packaging. This speeds design, manufacturing, and is backed by industry-leading reliability.
型號 製造商 描述 庫存 價格
QPD1010
DISTI # 772-QPD1010		QorvoRF JFET Transistors DC-4GHz 10W 28-50V SSG 25dB PAE 70% GaN
RoHS: Compliant		40
  • 1:$20.5500
  • 25:$17.7700
  • 100:$15.3700
  • 250:$14.3000
  • 500:$13.3000
QPD1010-EVB1
DISTI # 772-QPD1010-EVB1		QorvoRF Development Tools DC-4GHz 10W 28-50V Eval Board
RoHS: Compliant		3
  • 1:$875.0000
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 RF Development Tools OBSTACLE DETECTION SENSOR USING 1642
QPD1010-EVB1

Mfr.#: QPD1010-EVB1

OMO.#: OMO-QPD1010-EVB1-1152

 RF Development Tools DC-4GHz 10W 28-50V Eval Board
可用性
庫存:
25
訂購:
2008
輸入數量:
QPD1010的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$20.55
US$20.55
25
US$17.77
US$444.25
100
US$15.37
US$1 537.00
250
US$14.30
US$3 575.00
500
US$13.30
US$6 650.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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