FDFMA3N109

Mfr. #:: FDFMA3N109
製造商:: ON Semiconductor
描述:: MOSFET N-CH 30V 2.9A MICRO2X2
生命週期:: 製造商新產品
數據表:: FDFMA3N109 數據表
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ECAD Model:

產品屬性
屬性值

製造商: 仙童半導體

產品分類: FET - 單

系列: 動力戰壕

打包: Digi-ReelR 替代包裝

單位重量: 0.002116 oz

安裝方式: 貼片/貼片

包裝盒: 6-WDFN Exposed Pad

技術: 矽

工作溫度: -55°C ~ 150°C (TJ)

安裝型: 表面貼裝

通道數: 1 Channel

供應商-設備-包: 6-MicroFET (2x2)

配置: 單用肖特基二極管

FET型: MOSFET N 溝道，金屬氧化物

最大功率: 650mW

晶體管型: 1 N-Channel

漏源電壓 Vdss: 30V

輸入電容-Ciss-Vds: 220pF @ 15V

FET-Feature: 二極管（隔離）

Current-Continuous-Drain-Id-25°C: 2.9A (Tc)

Rds-On-Max-Id-Vgs: 123 mOhm @ 2.9A, 4.5V

Vgs-th-Max-Id: 1.5V @ 250μA

柵極電荷-Qg-Vgs: 3nC @ 4.5V

鈀功耗: 1.5 W

最高工作溫度: + 150 C

最低工作溫度: - 55 C

秋季時間: 8 ns

上升時間: 8 ns

VGS-柵極-源極-電壓: 12 V

Id 連續漏極電流: 2.9 A

Vds-漏-源-擊穿電壓: 30 V

Rds-On-Drain-Source-Resistance: 123 mOhms

晶體管極性: N通道

典型關斷延遲時間: 12 ns

典型開啟延遲時間: 6 ns

通道模式: 增強

Tags: FDFMA3, FDFMA, FDFM, FDF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDFMA3N109 描述

***Semiconductor: Integrated N-Channel PowerTrench®MOSFET and Schottky Diode 30 V, 2.9 A, 123 mΩ

***ment14 APAC: MOSFET, N, MLP6; Transistor Polarity:N Channel; Continuous Drain Current Id:2.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):123mohm; Rds(on) Test Voltage Vgs:1V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:1.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.9A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:MLP-6; Power Dissipation Pd:1.5W; Power Dissipation Pd:1.5W; Pulse Current Idm:10A; SMD Marking:109; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:4.5V

***rchild Semiconductor: This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It features a MOSFET with low input capacitance, total gate charge and onstate resistance, and an independently connected schottky diode with low forward voltage and reverse leakage current to maximize boost efficiency. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.

Market price

型號	製造商	描述	庫存	價格
FDFMA3N109 DISTI # V72:2272_06337763	ON Semiconductor	30V,2.9A ,INTEGRATED, NCH POWE	1923	1000:$0.2692 500:$0.2990 250:$0.3323 100:$0.3693 25:$0.5657 10:$0.5666 1:$0.6695
FDFMA3N109 DISTI # FDFMA3N109FSCT-ND	ON Semiconductor	MOSFET N-CH 30V 2.9A MICRO2X2 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	21130In Stock	1000:$0.3586 500:$0.4482 100:$0.6051 10:$0.7840 1:$0.9000
FDFMA3N109 DISTI # FDFMA3N109FSDKR-ND	ON Semiconductor	MOSFET N-CH 30V 2.9A MICRO2X2 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	21130In Stock	1000:$0.3586 500:$0.4482 100:$0.6051 10:$0.7840 1:$0.9000
FDFMA3N109 DISTI # FDFMA3N109FSTR-ND	ON Semiconductor	MOSFET N-CH 30V 2.9A MICRO2X2 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	21000In Stock	3000:$0.3155
FDFMA3N109 DISTI # 25745010	ON Semiconductor	30V,2.9A ,INTEGRATED, NCH POWE	1923	1000:$0.2692 500:$0.2990 250:$0.3323 100:$0.3693 29:$0.5657
FDFMA3N109 DISTI # FDFMA3N109	ON Semiconductor	Trans MOSFET N-CH 30V 2.9A 6-Pin MicroFET T/R (Alt: FDFMA3N109) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.3319 6000:€0.2719 12000:€0.2489 18000:€0.2299 30000:€0.2129
FDFMA3N109 DISTI # FDFMA3N109	ON Semiconductor	Trans MOSFET N-CH 30V 2.9A 6-Pin MicroFET T/R - Tape and Reel (Alt: FDFMA3N109) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.2359 6000:$0.2339 12000:$0.2309 18000:$0.2279 30000:$0.2219
FDFMA3N109 DISTI # 04M9094	ON Semiconductor	TRANSISTOR ARRAY, FULL REEL,Transistor Polarity:N Channel + Schottky,Continuous Drain Current Id:2.9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.075ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V RoHS Compliant: Yes	0	1:$0.2670 9000:$0.2580 24000:$0.2480
FDFMA3N109	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 2.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	75450	1000:$0.3800 500:$0.4000 100:$0.4200 25:$0.4400 1:$0.4700
FDFMA3N109 DISTI # 512-FDFMA3N109	ON Semiconductor	MOSFET PowerTrench MOSFET and Schottky Diode RoHS: Compliant	5668	1:$0.7400 10:$0.6140 100:$0.3960 1000:$0.3170 3000:$0.2680 9000:$0.2580 24000:$0.2480
FDFMA3N109 DISTI # 1324787RL	ON Semiconductor	MOSFET, N, MLP6 RoHS: Compliant	0	1:$1.1800 10:$0.9720 100:$0.6270 1000:$0.5020 3000:$0.4250 9000:$0.4090 24000:$0.3930 45000:$0.3870
FDFMA3N109 DISTI # 1324787	ON Semiconductor	MOSFET, N, MLP6 RoHS: Compliant	0	1:$1.1800 10:$0.9720 100:$0.6270 1000:$0.5020 3000:$0.4250 9000:$0.4090 24000:$0.3930 45000:$0.3870
FDFMA3N109 DISTI # C1S541901518927	ON Semiconductor	Trans MOSFET N-CH 30V 2.9A 6-Pin MLP EP T/R RoHS: Compliant	1923	250:$0.3323 100:$0.3693 25:$0.5657 10:$0.5666

相關產品

圖片	型號	描述
	Mfr.#: FDFMA2N028Z OMO.#: OMO-FDFMA2N028Z	MOSFET 20V N-Ch PT MFET SCHOTTKY
	Mfr.#: FDFMA2P853 OMO.#: OMO-FDFMA2P853	MOSFET MLP 2X2 DUAL INTEGRATED PCH PO
	Mfr.#: FDFMA2P853T OMO.#: OMO-FDFMA2P853T	MOSFET MOSFET/Schottky -20V Int. PCh PowerTrench
	Mfr.#: FDFMA2P853T OMO.#: OMO-FDFMA2P853T-ON-SEMICONDUCTOR	MOSFET P-CH 20V 3A 6-MICROFET
	Mfr.#: FDFMA2P029 OMO.#: OMO-FDFMA2P029-1190	全新原裝
	Mfr.#: FDFMA2P029Z OMO.#: OMO-FDFMA2P029Z-ON-SEMICONDUCTOR	MOSFET P-CH 20V 3.1A 2X2MLP
	Mfr.#: FDFMA2P853(853N) OMO.#: OMO-FDFMA2P853-853N--1190	全新原裝
	Mfr.#: FDFMA2P853/853F OMO.#: OMO-FDFMA2P853-853F-1190	全新原裝
	Mfr.#: FDFMA3N109 OMO.#: OMO-FDFMA3N109-ON-SEMICONDUCTOR	MOSFET N-CH 30V 2.9A MICRO2X2
	Mfr.#: FDFMA520PZ OMO.#: OMO-FDFMA520PZ-1190	全新原裝

可用性

庫存:: Available
訂購:: 1000
輸入數量:

FDFMA3N109的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]

參考價格（美元）

數量
單價
小計金額

1: ~~US$0.32~~; ~~US$0.32~~

10: ~~US$0.31~~; ~~US$3.06~~

100: ~~US$0.29~~; ~~US$29.03~~

500: ~~US$0.27~~; ~~US$137.05~~

1000: ~~US$0.26~~; ~~US$258.00~~

由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。

從...開始

FDFMA3 3
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FDFMA3N109

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes