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IPB120N04S4-01

IPB120N04S4-01
Mfr. #:
IPB120N04S4-01
製造商:
Infineon Technologies
描述:
RF Bipolar Transistors MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T2
生命週期:
製造商新產品
數據表:
IPB120N04S4-01 數據表
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更多信息:
IPB120N04S4-01 更多信息
產品屬性
屬性值
製造商
英飛凌
產品分類
FET - 單
系列
OptiMOS-T2
打包
捲軸
部分別名
IPB120N04S401ATMA1 IPB120N04S401XT SP000705700
單位重量
0.139332 oz
安裝方式
貼片/貼片
商品名
優化MOS
包裝盒
TO-252-3
技術
矽
通道數
1 Channel
配置
單身的
晶體管型
1 N-Channel
鈀功耗
300 W
最高工作溫度
+ 175 C
最低工作溫度
- 55 C
VGS-柵極-源極-電壓
20 V
Id 連續漏極電流
120 A
Vds-漏-源-擊穿電壓
40 V
Rds-On-Drain-Source-Resistance
2 mOhms
晶體管極性
N通道
通道模式
增強
Tags
IPB120N04S4-0, IPB120N04S4, IPB120N04, IPB120N0, IPB120N, IPB120, IPB12, IPB1, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Automotive COOLiRFET™ Power MOSFETs
Infineon Automotive COOLiRFET™ Power MOSFETs are specifically designed for Automotive applications. These HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These new devices offer low conduction losses and robust avalanche performance to deliver higher efficiency, power density and reliability. With this performance, many applications using these new COOLiRFET™ devices run significantly cooler than with state-of-the-art MOSFETs. These features combine to make this design an extremely efficient and reliable device for use in automotive applications and wide variety of other applications.
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
20V to 40V N-Channel Automotive MOSFETs
Infineon Technologies 20V to 40V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs address broad range of applications, including EPS motor control, 3-phase and H-bridge motors, HVAC fan control, and electric pumps in combination with PWM control.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
型號 製造商 描述 庫存 價格
IPB120N04S401ATMA1
DISTI # V72:2272_06383031		Infineon Technologies AGTrans MOSFET N-CH 40V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1106
  • 100:$1.8005
  • 25:$2.1404
  • 10:$2.1652
  • 1:$2.3561
IPB120N04S401ATMA1
DISTI # IPB120N04S401ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 40V 120A TO263-3-2
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1054In Stock
  • 500:$1.6195
  • 100:$2.0822
  • 10:$2.5910
  • 1:$2.8700
IPB120N04S401ATMA1
DISTI # IPB120N04S401ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 40V 120A TO263-3-2
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1054In Stock
  • 500:$1.6195
  • 100:$2.0822
  • 10:$2.5910
  • 1:$2.8700
IPB120N04S401ATMA1
DISTI # IPB120N04S401ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 40V 120A TO263-3-2
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		1000In Stock
  • 1000:$1.3028
IPB120N04S401ATMA1
DISTI # 26195102		Infineon Technologies AGTrans MOSFET N-CH 40V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1106
  • 100:$1.8005
  • 25:$2.1404
  • 10:$2.1652
  • 7:$2.3561
IPB120N04S401ATMA1
DISTI # IPB120N04S401ATMA1		Infineon Technologies AGTrans MOSFET N-CH 40V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB120N04S401ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$1.1759
  • 2000:$1.1339
  • 4000:$1.0929
  • 6000:$1.0559
  • 10000:$1.0369
IPB120N04S401ATMA1
DISTI # SP000705700		Infineon Technologies AGTrans MOSFET N-CH 40V 120A 3-Pin TO-263 T/R (Alt: SP000705700)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 1000:€1.3249
  • 2000:€1.1039
  • 4000:€1.0189
  • 6000:€0.9469
  • 10000:€0.8829
IPB120N04S401ATMA1
DISTI # 34AC1654		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 40V, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.00135ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power , RoHS Compliant: Yes263
  • 1:$3.0000
  • 10:$2.7100
  • 25:$2.5300
  • 50:$2.3500
  • 100:$2.1800
  • 250:$1.9300
  • 500:$1.6900
IPB120N04S401ATMA1Infineon Technologies AGPower Field-Effect Transistor, 120A I(D), 40V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant		46451
  • 1000:$1.1000
  • 500:$1.1600
  • 100:$1.2100
  • 25:$1.2600
  • 1:$1.3600
IPB120N04S4-01
DISTI # 726-IPB120N04S4-01		Infineon Technologies AGMOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T2
RoHS: Compliant		2372
  • 1:$2.4100
  • 10:$2.0500
  • 100:$1.6400
  • 500:$1.4300
  • 1000:$1.1900
IPB120N04S401ATMA1
DISTI # 2781067		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 40V, TO-263
RoHS: Compliant		263
  • 1:$2.4100
  • 10:$2.2500
  • 100:$1.9900
  • 250:$1.8800
  • 500:$1.7800
  • 1000:$1.7000
IPB120N04S401ATMA1
DISTI # 2781067		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 40V, TO-263
RoHS: Compliant		331
  • 1:£2.4700
  • 10:£1.9800
  • 100:£1.6000
  • 250:£1.4200
  • 500:£1.2400
IPB120N04S401ATMA1
DISTI # C1S322000652291		Infineon Technologies AGMOSFETs
RoHS: Compliant		106
  • 100:$1.8005
  • 25:$2.1404
  • 10:$2.1652
圖片 型號 描述
IPB120N04S404ATMA1

Mfr.#: IPB120N04S404ATMA1

OMO.#: OMO-IPB120N04S404ATMA1

 MOSFET N-CHANNEL_30/40V
IPB120N04S401ATMA1

Mfr.#: IPB120N04S401ATMA1

OMO.#: OMO-IPB120N04S401ATMA1

 MOSFET N-CHANNEL_30/40V
IPB120N06NGINTR-ND

Mfr.#: IPB120N06NGINTR-ND

OMO.#: OMO-IPB120N06NGINTR-ND-1190

 全新原裝
IPB120N06S402ATMA1

Mfr.#: IPB120N06S402ATMA1

OMO.#: OMO-IPB120N06S402ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 60V 120A TO263-3
IPB120N06S403ATMA1

Mfr.#: IPB120N06S403ATMA1

OMO.#: OMO-IPB120N06S403ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 60V 120A TO263-3
IPB120N06S4H1ATMA1

Mfr.#: IPB120N06S4H1ATMA1

OMO.#: OMO-IPB120N06S4H1ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 60V 120A TO263-3
IPB120N10S4-03

Mfr.#: IPB120N10S4-03

OMO.#: OMO-IPB120N10S4-03-1190

 - Bulk (Alt: IPB120N10S4-03)
IPB120N08S404ATMA1

Mfr.#: IPB120N08S404ATMA1

OMO.#: OMO-IPB120N08S404ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CHANNEL 75/80V
IPB120N06S4H1ATMA2

Mfr.#: IPB120N06S4H1ATMA2

OMO.#: OMO-IPB120N06S4H1ATMA2-INFINEON-TECHNOLOGIES

 RF Bipolar Transistors MOSFET N-Ch 60V 120A D2PAK-2
IPB120N04S4-02

Mfr.#: IPB120N04S4-02

OMO.#: OMO-IPB120N04S4-02-317

 RF Bipolar Transistors MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T2
可用性
庫存:
Available
訂購:
5500
輸入數量:
IPB120N04S4-01的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$1.60
US$1.60
10
US$1.52
US$15.25
100
US$1.44
US$144.45
500
US$1.36
US$682.15
1000
US$1.28
US$1 284.00
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