OMO ElectronicOMO Electronic
Expand menu
0 購物車

IPD180N10N

IPD180N10N
Mfr. #:
IPD180N10N
製造商:
Infineon Technologies
描述:
生命週期:
製造商新產品
數據表:
IPD180N10N 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商
英飛凌科技
產品分類
FET - 單
系列
優化MOS
打包
Digi-ReelR 替代包裝
部分別名
IPD180N10N3GBTMA1 IPD180N10N3GXT SP000482438
單位重量
0.139332 oz
安裝方式
貼片/貼片
包裝盒
TO-252-3, DPak (2 Leads + Tab), SC-63
技術
矽
工作溫度
-55°C ~ 175°C (TJ)
安裝型
表面貼裝
通道數
1 Channel
供應商-設備-包
PG-TO252-3
配置
單身的
FET型
MOSFET N 溝道，金屬氧化物
最大功率
71W
晶體管型
1 N-Channel
漏源電壓 Vdss
100V
輸入電容-Ciss-Vds
1800pF @ 50V
FET-Feature
標準
Current-Continuous-Drain-Id-25°C
43A (Tc)
Rds-On-Max-Id-Vgs
18 mOhm @ 33A, 10V
Vgs-th-Max-Id
3.5V @ 33μA
柵極電荷-Qg-Vgs
25nC @ 10V
鈀功耗
71 W
最高工作溫度
+ 175 C
最低工作溫度
- 55 C
秋季時間
5 ns
上升時間
12 ns
VGS-柵極-源極-電壓
20 V
Id 連續漏極電流
43 A
Vds-漏-源-擊穿電壓
100 V
Rds-On-Drain-Source-Resistance
18 mOhms
晶體管極性
N通道
典型關斷延遲時間
19 ns
典型開啟延遲時間
12 ns
通道模式
增強
Tags
IPD18, IPD1, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
型號 製造商 描述 庫存 價格
IPD180N10N3GATMA1
DISTI # V72:2272_09156944		Infineon Technologies AGMV POWER MOS1850
  • 1000:$0.4258
  • 500:$0.5137
  • 250:$0.5657
  • 100:$0.5675
  • 25:$0.6906
  • 10:$0.6937
  • 1:$0.7809
IPD180N10N3GATMA1
DISTI # IPD180N10N3GATMA1TR-ND		Infineon Technologies AGMV POWER MOS
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 2500:$0.4813
IPD180N10N3GBTMA1
DISTI # IPD180N10N3GBTMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 43A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    IPD180N10N3GBTMA1
    DISTI # IPD180N10N3GBTMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 100V 43A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IPD180N10N3GBTMA1
      DISTI # IPD180N10N3GBTMA1DKR-ND      		Infineon Technologies AGMOSFET N-CH 100V 43A TO252-3
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IPD180N10N3GATMA1
        DISTI # IPD180N10N3GATMA1CT-ND        		Infineon Technologies AGMV POWER MOS
        RoHS: Compliant
        Min Qty: 1
        Container: Cut Tape (CT)        		Temporarily Out of Stock
        • 1000:$0.5311
        • 500:$0.6727
        • 100:$0.8675
        • 10:$1.0980
        • 1:$1.2400
        IPD180N10N3GATMA1
        DISTI # IPD180N10N3GATMA1DKR-ND        		Infineon Technologies AGMV POWER MOS
        RoHS: Compliant
        Min Qty: 1
        Container: Digi-Reel®        		Temporarily Out of Stock
        • 1000:$0.5311
        • 500:$0.6727
        • 100:$0.8675
        • 10:$1.0980
        • 1:$1.2400
        IPD180N10N3GATMA1
        DISTI # 26196098        		Infineon Technologies AGMV POWER MOS1850
        • 21:$0.7816
        IPD180N10N3 G
        DISTI # IPD180N10N3 G        		Infineon Technologies AGTrans MOSFET N-CH 100V 43A 3-Pin TO-252 T/R (Alt: IPD180N10N3 G)
        RoHS: Compliant
        Min Qty: 2500
        Container: Tape and Reel        		Asia - 12500
        • 2500:$0.4992
        • 5000:$0.4787
        • 7500:$0.4722
        • 12500:$0.4538
        • 25000:$0.4480
        • 62500:$0.4368
        • 125000:$0.4261
        IPD180N10N3GATMA1
        DISTI # IPD180N10N3GATMA1        		Infineon Technologies AGMV POWER MOS - Tape and Reel (Alt: IPD180N10N3GATMA1)
        RoHS: Compliant
        Min Qty: 2500
        Container: Reel        		Americas - 0
        • 2500:$0.3599
        • 5000:$0.3469
        • 10000:$0.3339
        • 15000:$0.3229
        • 25000:$0.3169
        IPD180N10N3GBTMA1
        DISTI # IPD180N10N3GBTMA1        		Infineon Technologies AGTrans MOSFET N-CH 100V 43A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD180N10N3GBTMA1)
        RoHS: Compliant
        Min Qty: 2500
        Container: Reel        		Americas - 0
        • 2500:$0.3599
        • 5000:$0.3469
        • 10000:$0.3339
        • 15000:$0.3229
        • 25000:$0.3169
        IPD180N10N3GATMA1
        DISTI # 47Y8049        		Infineon Technologies AGMOSFET Transistor, N Channel, 43 A, 100 V, 0.0147 ohm, 10 V, 2.7 V , RoHS Compliant: Yes0
          IPD180N10N3GATMA1
          DISTI # 726-IPD180N10N3GATMA          		Infineon Technologies AGMOSFET MV POWER MOS
          RoHS: Compliant          		251
          • 1:$1.0300
          • 10:$0.8750
          • 100:$0.6720
          • 500:$0.5940
          • 1000:$0.4690
          • 2500:$0.4160
          IPD180N10N3GBTMA1
          DISTI # 726-IPD180N10N3GBTMA          		Infineon Technologies AGMOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
          RoHS: Compliant          		0
          • 1:$1.0300
          • 10:$0.8750
          • 100:$0.6720
          • 500:$0.5940
          • 1000:$0.4690
          • 2500:$0.4160
          • 10000:$0.4010
          IPD180N10N3 G
          DISTI # 726-IPD180N10N3G          		Infineon Technologies AGMOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
          RoHS: Compliant          		0
          • 1:$1.0300
          • 10:$0.8750
          • 100:$0.6720
          • 500:$0.5940
          • 1000:$0.4690
          • 2500:$0.4160
          • 10000:$0.4010
          IPD180N10N3GInfineon Technologies AGPower Field-Effect Transistor, 43A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
          RoHS: Compliant          		116
          • 1000:$0.4600
          • 500:$0.4800
          • 100:$0.5000
          • 25:$0.5200
          • 1:$0.5600
          IPD180N10N3GBTMA1Infineon Technologies AGPower Field-Effect Transistor, 43A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
          RoHS: Compliant          		166
          • 1000:$0.4400
          • 500:$0.4600
          • 100:$0.4800
          • 25:$0.5000
          • 1:$0.5400
          IPD180N10N3GInfineon Technologies AGINSTOCK622
            IPD180N10N3GATMA1
            DISTI # 2443433            		Infineon Technologies AGMOSFET, N CH, 100V, 43A, TO-252-3
            RoHS: Compliant            		0
            • 1:$1.6300
            • 10:$1.3900
            • 100:$1.0700
            • 500:$0.9400
            • 1000:$0.7430
            • 2500:$0.6670
            IPD180N10N3GBTMA1
            DISTI # 2617464            		Infineon Technologies AGMOSFET, N-CH, 100V, 43A, TO-252-3
            RoHS: Compliant            		0
            • 1:$1.4900
            • 10:$1.2300
            • 100:$0.9930
            • 250:$0.8880
            • 500:$0.7870
            • 1000:$0.7320
            圖片 型號 描述
            IPD180N10N3GATMA1

            Mfr.#: IPD180N10N3GATMA1

            OMO.#: OMO-IPD180N10N3GATMA1

            		 MOSFET MV POWER MOS
            IPD180N10N3GBTMA1

            Mfr.#: IPD180N10N3GBTMA1

            OMO.#: OMO-IPD180N10N3GBTMA1

            		 MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
            IPD180N10N3 G

            Mfr.#: IPD180N10N3 G

            OMO.#: OMO-IPD180N10N3-G

            		 MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
            IPD180N10N3GBTMA1

            Mfr.#: IPD180N10N3GBTMA1

            OMO.#: OMO-IPD180N10N3GBTMA1-INFINEON-TECHNOLOGIES

            		 MOSFET N-CH 100V 43A TO252-3
            IPD180N10N3GATMA1

            Mfr.#: IPD180N10N3GATMA1

            OMO.#: OMO-IPD180N10N3GATMA1-INFINEON-TECHNOLOGIES

            		 MV POWER MOS
            IPD180N10N3GATMA1-CUT TAPE

            Mfr.#: IPD180N10N3GATMA1-CUT TAPE

            OMO.#: OMO-IPD180N10N3GATMA1-CUT-TAPE-1190

            		 全新原裝
            IPD180N10N

            Mfr.#: IPD180N10N

            OMO.#: OMO-IPD180N10N-1190

            		 全新原裝
            IPD180N10N3 G

            Mfr.#: IPD180N10N3 G

            OMO.#: OMO-IPD180N10N3-G-1190

            		 MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
            IPD180N10N3GATMA1 , 2SD2

            Mfr.#: IPD180N10N3GATMA1 , 2SD2

            OMO.#: OMO-IPD180N10N3GATMA1-2SD2-1190

            		 全新原裝
            IPD180N10N3G

            Mfr.#: IPD180N10N3G

            OMO.#: OMO-IPD180N10N3G-124

            		 Darlington Transistors MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3
            可用性
            庫存:
            Available
            訂購:
            4500
            輸入數量:
            IPD180N10N的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
            參考價格（美元）
            數量
            單價
            小計金額
            1
            US$0.00
            US$0.00
            10
            US$0.00
            US$0.00
            100
            US$0.00
            US$0.00
            500
            US$0.00
            US$0.00
            1000
            US$0.00
            US$0.00
            從...開始
            Top