IRG4PC50KDPBF

Mfr. #:: IRG4PC50KDPBF
製造商:: Infineon Technologies
描述:: IGBT Transistors 600V ULTRAFAST 8-25 KHZ COPACK IGBT
生命週期:: 製造商新產品
數據表:: IRG4PC50KDPBF 數據表
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產品屬性
屬性值

製造商：: 英飛凌

產品分類：: IGBT晶體管

RoHS：: Y

技術：: 矽

包裝/案例：: TO-247-3

安裝方式：: 通孔

配置：: 單身的

集電極-發射極電壓 VCEO 最大值：: 600 V

集電極-發射極飽和電壓：: 2.2 V

最大柵極發射極電壓：: 20 V

25 C 時的連續集電極電流：: 52 A

Pd - 功耗：: 104 W

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

打包：: 管子

連續集電極電流 Ic 最大值：: 52 A

高度：: 20.3 mm

長度：: 15.9 mm

寬度：: 5.3 mm

品牌：: 英飛凌科技

產品類別：: IGBT晶體管

出廠包裝數量：: 400

子類別：: IGBT

第 # 部分別名：: SP001540572

單位重量：: 1.340411 oz

Tags: IRG4PC50KD, IRG4PC50K, IRG4PC5, IRG4PC, IRG4P, IRG4, IRG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRG4PC50KDPBF 描述

***p One Stop Global: Trans IGBT Chip N-CH 600V 52A 200000mW 3-Pin(3+Tab) TO-247AC Tube

***ure Electronics: IRG4PC50KDPbF Series 600 V 30 A N-Channel UltraFast IGBT - TO-247AC

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.84 V Current release time: 95 ns Power dissipation: 200 W

***ment14 APAC: IGBT, 600V, 52A, TO-247AC; Transistor Type:IGBT; DC Collector Current:52A; Collector Emitter Voltage Vces:1.84V; Power Dissipation Pd:104W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:52A; Current Temperature:25°C; Device Marking:IRG4PC50KDPBF; Fall Time Max:140ns; Fall Time tf:140ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:104W; Power Dissipation Pd:104W; Pulsed Current Icm:104A; Rise Time:49ns; Short Circuit Withstand Time Min:10µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***p One Stop Global: Trans IGBT Chip N-CH 600V 55A 200000mW 3-Pin(3+Tab) TO-247AC Tube

***(Formerly Allied Electronics): 600V ULTRAFAST 8-60 KHZ COPACK IGBT IN A TO-247AC PACKAGE | Infineon IRG4PC50UDPBF

***hine Compare: Igbt 600V 55A 200W TO247AC Igbt 600V 55A 200W TO247AC Igbt 600V 55A 200W TO247AC

*** Electronics: IR - IR IRG4PC50UD IGBT DEVICE IGBT W/DIODE 600V 55A TO-247AC

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.65 V Current release time: 74 ns Power dissipation: 200 W

***ment14 APAC: IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:55A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:55A; Current Temperature:25°C; Fall Time Max:110ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:220A; Rise Time:25ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***ineon SCT: 600V UltraFast 8-60 kHz Copack IGBT in a TO-247AC package, TO247COPAK-3, RoHS

***et: Trans IGBT Chip N-CH 600V 55A 3-Pin(3+Tab) TO-247AC

***icontronic: Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AD

***ineon: Target Applications: Pump; Solar; UPS; Welding

*** Electronic Components: IGBT Transistors 600V UltraFast 8-60kHz

***i-Key Marketplace: IRG4PC50 - DISCRETE IGBT WITH AN

***ment14 APAC: IGBT, 600V, 55A, TO-247AC; Transistor Type:IGBT; DC Collector Current:55A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:55A; Current Temperature:25°C; Device Marking:IRG4PC50UD; Fall Time Max:110ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:220A; Rise Time:25ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***p One Stop Global: Trans IGBT Chip N-CH 600V 55A 200000mW 3-Pin(3+Tab) TO-247AC Tube

***eco: Transistor IGBT Chip N Channel 600 Volt 55 Amp 3-Pin 3+ Tab TO-247AA

***ineon SCT: 600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.3 V Current release time: 62 ns Power dissipation: 200 W

***ark: IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:55A; Collector Emitter Saturation Voltage, Vce(sat):2.3V; Power Dissipation, Pd:200W; Package/Case:TO-247AC ;RoHS Compliant: Yes

***nell: IGBT, TO-247; Collector Emitter Saturation Voltage Vce(on): 2.3V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; MSL: -; SVHC: No SVHC (27-Jun-2018); Cur

***ment14 APAC: IGBT, 600V, 55A, TO-247AC; Transistor Type:IGBT; DC Collector Current:55A; Collector Emitter Voltage Vces:2.3V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:55A; Current Temperature:25°C; Device Marking:IRG4PC50W; Fall Time Max:120ns; Fall Time tf:120ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:220A; Rise Time:33ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***icroelectronics: Trench gate field-stop IGBT, HB series 600 V, 30 A high speed

***ical: Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(3+Tab) TO-247 Tube

***nell: IGBT, SINGLE, 600V, 60A, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 600V; Power Dissipation Pd: 260W; Collector Emitter Voltage V(br)ceo: 1.55V; Transistor Case Style: TO-247; No. of Pins

***icroelectronics: Trench gate field-stop IGBT, V series 600 V, 20 A very high speed

***et: Trans IGBT Chip N-CH 600V 40A 3-Pin TO-247 Tube

***r Electronics: Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247

***el Electronic: Cap Ceramic 330pF 50V C0G 5% SMD 0805 125°C Punched Paper T/R

***ure Electronics: IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop

***(Formerly Allied Electronics): IGBT Trench gate,600V 20A/100 deg,TO247

***Yang: TO-247, SINGLE, N-CHANNEL, 600V SMPS IGBT - Bulk

*** Electronic Components: IGBT Transistors Sgl N-Ch 600V SMPS

***nell: IGBT, N, TO-247; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:45A; Voltage, Vce Sat Max:2.5V; Power Dissipation:167W; Case Style:TO-247; Alternate Case Style:SOT-249; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:108A; No. of Pins:3; Pin Format:GCE; Power, Pd:167W; Power, Ptot:167W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:53ns; Time, Rise:10ns; Transistors, No. of:1

Market price

型號	製造商	描述	庫存	價格
IRG4PC50KDPBF DISTI # 30701792	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 52A 3-Pin(3+Tab) TO-247AC Tube RoHS: Compliant	13830	100:$4.4453 25:$4.6973 5:$5.0098
IRG4PC50KDPBF DISTI # 26421367	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 52A 3-Pin(3+Tab) TO-247AC Tube RoHS: Compliant	275	25:$6.1067
IRG4PC50KDPBF DISTI # IRG4PC50KDPBF-ND	Infineon Technologies AG	IGBT 600V 52A 200W TO247AC RoHS: Compliant Min Qty: 1 Container: Tube	2343In Stock	500:$5.7503 100:$6.6036 25:$7.6052 1:$8.8300
IRG4PC50KDPBF DISTI # C1S322000571400	Infineon Technologies AG	IGBT Chip	13830	200:$5.4600 100:$6.6000 50:$7.1300 25:$7.7700 10:$7.9500 1:$11.6000
IRG4PC50KDPBF DISTI # IRG4PC50KDPBF	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 52A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: IRG4PC50KDPBF) RoHS: Compliant Min Qty: 1 Container: Tube	Americas - 2583	1:$6.0900 10:$6.0900 25:$5.3900 50:$5.3900 100:$4.6900 500:$4.5900 1000:$4.5900
IRG4PC50KDPBF DISTI # SP001540572	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 52A 3-Pin(3+Tab) TO-247AC (Alt: SP001540572) RoHS: Compliant Min Qty: 1	Europe - 3550	1:€6.0900 10:€6.0900 25:€4.9900 50:€4.9900 100:€4.1900 500:€3.7900 1000:€3.7900
IRG4PC50KDPBF DISTI # 63J7526	Infineon Technologies AG	SINGLE IGBT, 600V, 52A,DC Collector Current:52A,Collector Emitter Saturation Voltage Vce(on):2.19V,Power Dissipation Pd:200W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- , RoHS Compliant: Yes	141	1:$8.4100 10:$7.6000 25:$7.2500 50:$6.7700 100:$6.2900 250:$6.0100 500:$5.4800
IRG4PC50KDPBF. DISTI # 27AC6934	Infineon Technologies AG	INDUSTRY 59 , ROHS COMPLIANT: YES	0	1:$8.5800 10:$7.7500 25:$7.4000 50:$6.7700 100:$6.2900 250:$6.0100 500:$5.4800
IRG4PC50KDPBF DISTI # 70017074	Infineon Technologies AG	600V Ultrafast 8-25 kHz COPACK IGBT IN A TO-247AC Package RoHS: Compliant	0	4000:$5.9120
IRG4PC50KDPBF	International Rectifier	RoHS: Not Compliant	11250	1000:$4.4700 500:$4.7100 100:$4.9000 25:$5.1100 1:$5.5000
IRG4PC50KDPBF	Infineon Technologies AG	IRG4PC50KDPbF Series 600 V 30 A N-Channel UltraFast IGBT - TO-247AC RoHS: Compliant	450Tube	5:$5.4400 25:$4.6600 100:$4.3600
IRG4PC50KDPBF DISTI # 942-IRG4PC50KDPBF	Infineon Technologies AG	IGBT Transistors 600V ULTRAFAST 8-25 KHZ COPACK IGBT RoHS: Compliant	0
IRG4PC50KDPBF DISTI # 5430282P	Infineon Technologies AG	TRANSISTOR IGBT N-CH 600V 52A TO247AC, TU	339	25:£4.5200 100:£3.9200 250:£3.7500 500:£3.4100
IRG4PC50KDPBF DISTI # 5430282	Infineon Technologies AG	TRANSISTOR IGBT N-CH 600V 52A TO247AC, EA	69	1:£5.6300 25:£4.5200 100:£3.9200 250:£3.7500 500:£3.4100
IRG4PC50KDPBF DISTI # IRG4PC50KDPBF	Infineon Technologies AG	Transistor: IGBT,600V,52A,104W,TO247-3	72	1:$5.5000 3:$4.9600 10:$4.0800 50:$3.6600
IRG4PC50KDPBF DISTI # 8650586	Infineon Technologies AG	IGBT, 600V, 52A, TO-247AC RoHS: Compliant	578	1:£6.3200 10:£4.5600 100:£3.9600 250:£3.7900 500:£3.4500
IRG4PC50KDPBF DISTI # XSFT00000025449	Infineon Technologies AG	IRG4PC50KDPBF SERIES 600 V 30 A N-CHANNEL ULTRAFASTIGBT - TO-247AC RoHS: Compliant	350	50:$7.3800
IRG4PC50KDPBF DISTI # 8650586	Infineon Technologies AG	IGBT, 600V, 52A, TO-247AC RoHS: Compliant	282	1:$13.3100 10:$12.0300 25:$11.4800 100:$9.9600 250:$9.5200 500:$8.6800 1000:$7.7300

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