S25FL128SAGMFVG01

Mfr. #:: S25FL128SAGMFVG01
製造商:: Cypress Semiconductor
描述:: NOR Flash Nor
生命週期:: 製造商新產品
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更多信息:: S25FL128SAGMFVG01 更多信息 S25FL128SAGMFVG01 Product Details

產品屬性
屬性值

製造商：: 賽普拉斯半導體

產品分類：: NOR閃存

RoHS：: Y

安裝方式：: 貼片/貼片

包裝/案例：: SOIC-16

系列：: S25FL128S

內存大小：: 128 Mbit

最大時鐘頻率：: 133 MHz

接口類型：: SPI

組織：: 16 M x 8

計時類型：: 異步

數據總線寬度：: 8 bit

電源電壓 - 最小值：: 2.7 V

電源電壓 - 最大值：: 3.6 V

電源電流 - 最大值：: 100 mA

最低工作溫度：: - 40 C

最高工作溫度：: + 105 C

打包：: 管子

內存類型：: 也不

速度：: 133 MHz

建築學：: MirrorBit Eclipse

品牌：: 賽普拉斯半導體

濕氣敏感：: 是的

產品類別：: NOR閃存

標準：: 通用閃存接口 (CFI)

出廠包裝數量：: 47

子類別：: 內存和數據存儲

商品名：: 鏡像位

Tags: S25FL128SAGMFVG, S25FL128SAGMFV, S25FL128SAGM, S25FL128SAG, S25FL128SA, S25FL128S, S25FL128, S25FL12, S25FL1, S25FL, S25F, S25

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

S25FL128SAGMFVG01 描述

***ress Semiconductor SCT: Serial NOR Flash Memory, 128 Mbit Density, SOIC-16, RoHS

***ark: TUBE PKGED / 128-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 133-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 64KB, SO3016 IN TUBE PACKING, WITH RESET#

***i-Key: IC FLASH 128MBIT SPI/QUAD 16SOIC

***pmh: IC FLASH 128M SPI 133MHZ 16SOIC

***p One Stop: NOR Flash Serial (SPI, Dual SPI, Quad SPI) 2.5V/3V/3.3V 64M-bit 8M x 8 8ns 8-Pin SOIC

***ment14 APAC: NOR FLASH MEMORY 64MBIT, 133MHZ, SOIC-8; Flash Memory Type:Serial NOR; Size:64Mbit; Configuration:8M x 8bit; IC Interface

***nell: NOR FLASH MEMORY 64MBIT, 133MHZ, SOIC-8; Flash Memory Type: Serial NOR; Memory Size: 64Mbit; Flash Memory Configuration: 8M x 8bit; IC Interface Type: SPI; Memory Case Style: SOIC; No. of Pins: 8Pins; Clock Frequency: 133MHz; Access Time: -; Supply Voltage Min: 2.3V; Supply Voltage Max: 3.6V; Operating Temperature Min: -40°C; Operating Temperature Max: 105°C; Product Range: 3V Serial NOR Flash Memories; RoHS Phthalates Compliant: Yes; MSL: MSL 3 - 168 hours; SVHC: No SVHC (07-Jul-2017)

***ical: NOR Flash Serial (SPI, Dual SPI, Quad SPI) 2.5V/3V/3.3V 128M-bit 16M x 8 8ns 8-Pin SOIC

***-Wing Technology: 3A991.B.1.A Surface Mount Bulk FLASH - NOR ic memory 133MHz 1ms 2.16mm 0.000065A

***nell: NOR FLASH MEMORY 128MBIT, 133MHZ, SOIC-8; Flash Memory Type: Serial NOR; Memory Size: 128Mbit; Flash Memory Configuration: 16M x 8bit; IC Interface Type: SPI; Memory Case Style: SOIC; No. of Pins: 8Pins; Clock Frequency: 133MHz; Access Time: -; Supply Voltage Min: 2.3V; Supply Voltage Max: 3.6V; Operating Temperature Min: -40°C; Operating Temperature Max: 105°C; Product Range: 3V Serial NOR Flash Memories; RoHS Phthalates Compliant: Yes; MSL: MSL 3 - 168 hours; SVHC: No SVHC (07-Jul-2017)

***ical: NOR Flash Serial-SPI 3V/3.3V 256Mbit 256M x 1bit 8ns 16-Pin SOIC W Tube

***ure Electronics: FLASH - NOR Memory IC 256Mb (32M x 8) SPI - Quad I/O 133 MHz 16-SOIC

***ress Semiconductor SCT: Serial NOR Flash Memory, 256 Mbit Density, SOIC-16, RoHS

***p One Stop: NOR Flash Serial (SPI, Dual SPI, Quad SPI) 1.8V 128M-bit 16M x 8 8ns 8-Pin SOIC Tube

***ress Semiconductor SCT: Serial NOR Flash Memory, 128 Mbit Density, SOIC-8, RoHS

***-Wing Technology: Surface Mount Tube 32MX4 FLASH - NOR ic memory 133MHz 8ns 2.159mm 65mA

***p One Stop: NOR Flash Serial (SPI, Dual SPI, Quad SPI) 1.8V 128M-bit 16M x 8 8ns 8-Pin SOIC Tray

***ure Electronics: FLASH - NOR Memory IC 128Mb (16M x 8) SPI - Quad I/O, QPI 133MHz 8-SOIC

***ress Semiconductor SCT: Serial NOR Flash Memory, 128 Mbit Density, SOIC-8, RoHS

***ark: IC, MEMORY, FLASH, 128MBIT, 1.8V, 8SOIC; Flash Memory Type:Serial NOR; Memory Size:128Mbit; Flash Memory Configuration:16M x 8bit; IC Interface Type:SPI; Memory Case Style:SOIC; No. of Pins:8Pins; Clock Frequency:133MHz; Access RoHS Compliant: Yes

***ow.cn: NOR Flash Serial (SPI, Dual SPI, Quad SPI) 2.5V/3V/3.3V 128M-bit 16M x 8 8ns 16-Pin SOIC W

***-Wing Technology: 3A991.B.1.A Surface Mount Bulk 128MX1 ic memory 133MHz 1ms 7.5mm 0.000065A

***ark: 128Mb Qpi/Qspi, 16-Pin Sop 300Mil, Rohs |Integrated Silicon Solution (Issi) IS25LP128-JMLE

S25FL128SAGMFVG01 更多信息

S25FL128S NOR Flash Memory Devices: Cypress S25FL128S FL-S NOR is a 2.7V - 3.6V / 1.65V - 3.6V VIO Volt Flash Non-volatile Memory Device using 65nm MirrorBit technology. Designed using the Eclipse architecture with a Page Programming Buffer, the 128-Mb S25FL128S FL-S NOR allows users to program up to 128 words (256 bytes) in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via a Serial Peripheral Interface (SPI) and supports traditional SPI single bit serial input and output (Single I/O or SIO), optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. As part of the FL-S family, S25FL128S FL-S NOR provides support for Double Data Rate (DDR) read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL128S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. Cypress S25FL128S FL-S NOR is ideal for code shadowing, XIP, and data storage.

S25FL MirroBit Flash Non-Volatile Memory: Cypress S25FL128S / S25FL256S MirroBit® Flash Non-Volatile Memory devices employ MirrorBit technology that stores two data bits in each memory array transistor. These Cypress devices feature 65nm process lithography as well as Eclipse architecture that dramatically improves program and erase performance. S25FL128S and S25FL256S Flash Non-Volatile Memory devices offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP, and data storage.

S25FLxS FL-S NOR Flash Memory Devices: Cypress S25FLxS FL-S NOR Flash Memory Devices are 2.7V-3.6V or 1.65V-3.6V VIO Volt Flash Non-volatile Memory Devices. The S25FLxS FL-S NOR Flash Memory Devices use 65nm MirrorBit® technology. Featuring the Eclipse™ architecture with a Page Programming Buffer, 256-Mb S25FLxS FL-S NOR allows users to program up to 256-words. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The devices connect to a host system via an SPI and support traditional SPI single bit serial input and output.The S25FLxS FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO. The S25FLxS FL-S NOR transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands. The S25FLxS NOR instruction read transfer rate can match a traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FLxS FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. S25FLxS FL-S NOR memory devices are ideal for code shadowing, XIP, and data storage.

Market price

型號	製造商	描述	庫存	價格
S25FL128SAGMFVG01 DISTI # S25FL128SAGMFVG01-ND	Cypress Semiconductor	IC FLASH 128M SPI 133MHZ 16SOIC RoHS: Compliant Min Qty: 188 Container: Tube	Temporarily Out of Stock	188:$2.9378
S25FL128SAGMFVG01 DISTI # 727-S25FL128SAGMFVG0	Cypress Semiconductor	NOR Flash Nor RoHS: Compliant	0	1:$4.8700 10:$4.3500 25:$3.9200 100:$3.5700 250:$3.2200 500:$2.6100

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