IRF8513PBF

Mfr. #:: IRF8513PBF
製造商:: Infineon Technologies
描述:: MOSFET 2N-CH 30V 8A/11A 8-SOIC
生命週期:: 製造商新產品
數據表:: IRF8513PBF 數據表
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ECAD Model:

產品屬性
屬性值

製造商: 英飛凌科技

產品分類: FET - 陣列

系列: -

打包: 管替代包裝

包裝盒: 8-SOIC (0.154", 3.90mm Width)

工作溫度: -55°C ~ 175°C (TJ)

安裝型: 表面貼裝

供應商-設備-包: 8-SO

FET型: 2 N-Channel (Dual)

最大功率: 1.5W, 2.4W

漏源電壓 Vdss: 30V

輸入電容-Ciss-Vds: 766pF @ 15V

FET-Feature: 邏輯電平門

Current-Continuous-Drain-Id-25°C: 8A, 11A

Rds-On-Max-Id-Vgs: 15.5 mOhm @ 8A, 10V

Vgs-th-Max-Id: 2.35V @ 25μA

柵極電荷-Qg-Vgs: 8.6nC @ 4.5V

Tags: IRF85, IRF8, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF8513PBF 描述

***ure Electronics: Dual N-Channel 30 V 15.5 mOhm 5.7 nC HEXFET® Power Mosfet - SOIC-8

***ernational Rectifier: 30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package

***ark: ; Continuous Drain Current, Id:8A; On Resistance, Rds(on):15.5mohm; No. of Pins:8

***nell: DUAL N CH MOSFET, 30V, 8A, SOIC

***et: Trans MOSFET N-CH 30V 8A/11A 8-Pin SO

***ment14 APAC: MOSFET, DUAL N-CH 30V 8A/11A SO8; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):15.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.4W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:8mA; Package / Case:SOIC; Power Dissipation Pd:2.4W; Power Dissipation Pd:2.4W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V

Market price

型號	製造商	描述	庫存	價格
IRF8513PBF DISTI # IRF8513PBF-ND	Infineon Technologies AG	MOSFET 2N-CH 30V 8A/11A 8-SOIC RoHS: Compliant Min Qty: 3800 Container: Tube	Limited Supply - Call
IRF8513PBF DISTI # 70018021	Infineon Technologies AG	MOSFET,DUAL N-CHANNEL,30V,11A,SO-8 RoHS: Compliant	0	3800:$1.0600 7600:$1.0390 19000:$1.0070 38000:$0.9650 95000:$0.9010
IRF8513PBF DISTI # 942-IRF8513PBF	Infineon Technologies AG	MOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC RoHS: Compliant	0
IRF8513PBF	Infineon Technologies AG	Dual N-Channel 30 V 15.5 mOhm 5.7 nC HEXFET Power Mosfet - SOIC-8 RoHS: Compliant	42Tube	25:$0.4750 300:$0.4150 1250:$0.3600
IRF8513PBF	International Rectifier	RoHS: Compliant	Europe - 455

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