We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
型號 | 製造商 | 描述 | 庫存 | 價格 |
---|---|---|---|---|
SPA16N50C3 DISTI # SPA16N50C3 | Infineon Technologies AG | Trans MOSFET N-CH 560V 16A 3-Pin TO-220FP Tube - Bulk (Alt: SPA16N50C3) RoHS: Not Compliant Min Qty: 264 Container: Bulk | Americas - 0 |
|
SPB16N50C3 DISTI # SPB16N50C3 | Infineon Technologies AG | Trans MOSFET N-CH 500V 16A 3-Pin TO-263 T/R - Bulk (Alt: SPB16N50C3) RoHS: Compliant Min Qty: 272 Container: Bulk | Americas - 0 |
|
SPP16N50C3 DISTI # SPP16N50C3 | Infineon Technologies AG | Trans MOSFET N-CH 560V 16A 3-Pin TO-220AB Tube - Bulk (Alt: SPP16N50C3) RoHS: Not Compliant Min Qty: 272 Container: Bulk | Americas - 0 |
|
SPW16N50C3 DISTI # SPW16N50C3 | Infineon Technologies AG | Trans MOSFET N-CH 560V 16A 3-Pin TO-247 Tube - Bulk (Alt: SPW16N50C3) RoHS: Not Compliant Min Qty: 218 Container: Bulk | Americas - 0 |
|
SPI16N50C3 DISTI # SPI16N50C3 | Infineon Technologies AG | Trans MOSFET N-CH 560V 16A 3-Pin TO-262 Tube - Bulk (Alt: SPI16N50C3) RoHS: Not Compliant Min Qty: 321 Container: Bulk | Americas - 0 |
|
FQPF6N50C DISTI # FQPF6N50C | ON Semiconductor | - Bulk (Alt: FQPF6N50C) Min Qty: 511 Container: Bulk | Americas - 0 |
|
SPA16N50C3XK DISTI # SPA16N50C3XKSA1 | Infineon Technologies AG | Trans MOSFET N-CH 560V 16A 3-Pin(3+Tab) TO-220FP - Rail/Tube (Alt: SPA16N50C3XKSA1) RoHS: Compliant Min Qty: 500 Container: Tube | Americas - 0 |
|
SPI16N50C3IN DISTI # SPI16N50C3IN | Infineon Technologies AG | - Bulk (Alt: SPI16N50C3IN) Min Qty: 658 Container: Bulk | Americas - 0 |
|
SIHG16N50C-E3 DISTI # SIHG16N50C-E3 | Vishay Intertechnologies | Trans MOSFET N-CH 500V 16A 3-Pin(3+Tab) TO-247AC - Tape and Reel (Alt: SIHG16N50C-E3) RoHS: Not Compliant Min Qty: 500 Container: Reel | Americas - 0 |
|
SIHB16N50C-E3 DISTI # SIHB16N50C-E3 | Vishay Intertechnologies | Trans MOSFET N-CH 500V 16A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: SIHB16N50C-E3) RoHS: Not Compliant Min Qty: 1000 Container: Reel | Americas - 0 |
|
SPB16N50C3ATMA1 DISTI # SPB16N50C3ATMA1 | Infineon Technologies AG | - Bulk (Alt: SPB16N50C3ATMA1) RoHS: Compliant Min Qty: 272 Container: Bulk | Americas - 0 |
|
SPW16N50C3FKSA1 DISTI # SPW16N50C3FKSA1 | Infineon Technologies AG | Trans MOSFET N-CH 560V 16A 3-Pin TO-247 Tube - Rail/Tube (Alt: SPW16N50C3FKSA1) RoHS: Compliant Min Qty: 240 Container: Tube | Americas - 0 |
|
SPW16N50C3FKSA1 DISTI # SPW16N50C3FKSA1 | Infineon Technologies AG | Trans MOSFET N-CH 560V 16A 3-Pin TO-247 Tube - Bulk (Alt: SPW16N50C3FKSA1) RoHS: Compliant Min Qty: 218 Container: Bulk | Americas - 0 |
|
SIPC26N50C3X1SA2 DISTI # SIPC26N50C3X1SA2 | Infineon Technologies AG | HIGH POWER_PRICE/PERFORM - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: SIPC26N50C3X1SA2) RoHS: Compliant Min Qty: 169 Container: Waffle Pack | Americas - 0 |
|
SIPC26N50C3X1SA2 DISTI # SIPC26N50C3X1SA2 | Infineon Technologies AG | HIGH POWER_PRICE/PERFORM - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: SIPC26N50C3X1SA2) RoHS: Compliant Min Qty: 169 Container: Waffle Pack | Americas - 0 | |
SPA16N50C3XKSA1 DISTI # 47W3750 | Infineon Technologies AG | MOSFET, N CHANNEL, 560V, 16A, TO220FP,Transistor Polarity:N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:560V,On Resistance Rds(on):0.25ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,MSL:- RoHS Compliant: Yes | 0 |
|
SPW16N50C3FKSA1 DISTI # 33P8231 | Infineon Technologies AG | MOSFET, N CHANNEL, 560V, 16A, TO-247-3,Transistor Polarity:N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:560V,On Resistance Rds(on):0.25ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,MSL:- RoHS Compliant: Yes | 50 |
|
SPP16N50C3XKSA1 DISTI # 22AC8558 | Infineon Technologies AG | MOSFET, N, COOLMOS, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:560V,On Resistance Rds(on):0.25ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes | 0 |
|
FQD6N50CTM DISTI # 60J0817 | ON Semiconductor | TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,4.5A I(D),TO-252AA ROHS COMPLIANT: YES | 0 |
|
SPA16N50C3XKSA1. DISTI # 28AC3055 | Infineon Technologies AG | MOSFET, N CHANNEL, 560V, 16A, TO220FP,Transistor Polarity:N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:560V,On Resistance Rds(on):0.25ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,MSL:- RoHS Compliant: Yes | 0 |
|
SIHG16N50C-E3 DISTI # 23T8468 | Vishay Intertechnologies | MOSFET,N CHANNEL,DIODE,500V,16A,TO-247AC,Transistor Polarity:N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:500V,On Resistance Rds(on):0.317ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,MSL:- RoHS Compliant: Yes | 403 | |
SPA16N50C3 | Infineon Technologies AG | Power Field-Effect Transistor, 16A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB RoHS: Compliant | 55 |
|
SPA16N50C3XKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 16A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB RoHS: Compliant | 4 |
|
SPB16N50C3 | Infineon Technologies AG | Power Field-Effect Transistor, 16A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 11 |
|
SPB16N50C3ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 16A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 201 |
|
SPI16N50C3IN | Infineon Technologies AG | RoHS: Not Compliant | 448 |
|
SPW16N50C3FKSA1 | Infineon Technologies AG | RoHS: Not Compliant | 30 |
|
SPP16N50C3 | Infineon Technologies AG | Power Field-Effect Transistor, 16A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | 46 |
|
SPW16N50C3 | Infineon Technologies AG | Power Field-Effect Transistor, 16A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AD RoHS: Compliant | 480 |
|
SPI16N50C3 | Infineon Technologies AG | Power Field-Effect Transistor, 16A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant | 300 |
|
SPP16N50C3HKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 16A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | 282 |
|
SPP16N50C3XKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 16A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | 3500 |
|
FQD6N50CTF | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 8937 |
|
FQD6N50CTM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 123182 |
|
FQP6N50C | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 5.5A I(D), 500V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | 2224 |
|
FQPF6N50C | Fairchild Semiconductor Corporation | RoHS: Not Compliant | 1000 |
|
SPB16N50C3 | Infineon Technologies AG | 1333 | ||
SPP16N50C3HKSA1 | Infineon Technologies AG | 450 | ||
SPA16N50C3XKSA1 DISTI # 1107465P | Infineon Technologies AG | MOSFET N-CHAN COOLMOS 500V 16A TO220, TU | 180 |
|
SPB16N50C3ATMA1 DISTI # 7533150P | Infineon Technologies AG | MOSFET N-CHANNEL 500V 16A COOLMOS TO263, RL | 514 |
|
SPW16N50C3FKSA1 DISTI # 7533217P | Infineon Technologies AG | MOSFET N-CHANNEL 560V 16A COOLMOS TO247, TU | 153 |
|
SPW16N50C3FKSA1 DISTI # 7533217 | Infineon Technologies AG | MOSFET N-CHANNEL 560V 16A COOLMOS TO247, EA | 24 |
|
SPA16N50C3XKSA1 DISTI # 2212873 | Infineon Technologies AG | MOSFET, N-CH, 560V, 16A, TO220FP RoHS: Compliant | 187 |
|
SPB16N50C3ATMA1 DISTI # 2480730 | Infineon Technologies AG | MOSFET, N-CH, 560V, 16A, TO-263-3 RoHS: Compliant | 461 |
|
SPB16N50C3ATMA1 DISTI # 2480730RL | Infineon Technologies AG | MOSFET, N-CH, 560V, 16A, TO-263-3 RoHS: Compliant | 0 |
|
SPW16N50C3FKSA1 DISTI # 1664136 | Infineon Technologies AG | MOSFET, N, TO-247 RoHS: Compliant | 290 |
|
圖片 | 型號 | 描述 |
---|---|---|
Mfr.#: 6N50000374 OMO.#: OMO-6N50000374-1190 |
全新原裝 | |
Mfr.#: 6N50E10 OMO.#: OMO-6N50E10-1190 |
全新原裝 | |
Mfr.#: 6N50L OMO.#: OMO-6N50L-1190 |
全新原裝 | |
Mfr.#: 6N50L-TA3-T OMO.#: OMO-6N50L-TA3-T-1190 |
全新原裝 | |
Mfr.#: 6N50PFAZB OMO.#: OMO-6N50PFAZB-1190 |
全新原裝 | |
Mfr.#: 6N50W-20 OMO.#: OMO-6N50W-20-1190 |
全新原裝 | |
Mfr.#: 6N50WR-06M OMO.#: OMO-6N50WR-06M-1190 |
ATTENUATOR - FIXED COAXIAL | |
Mfr.#: 6N548 OMO.#: OMO-6N548-1190 |
全新原裝 | |
Mfr.#: 6N5W-30 OMO.#: OMO-6N5W-30-1190 |
ATTENUATOR - FIXED COAXIAL | |
Mfr.#: 6N5W-04M OMO.#: OMO-6N5W-04M-1190 |
ATTENUATOR - FIXED COAXIAL |