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ESR is quite variable. Some caps measured as low as 0.02 ohms (20 milliohms) and some up to 0.06 ohms (60 milliohms). They are branded as Sanyo WG series but (low ESR) WG caps don't go above 20 milliohms and also, WG series never came in 35v version like these, haha. I didn't expect them to be genuine Sanyo and they are probably going to be ok for most jobs but I wouldn't go as far as using them in motherboards or high current switch mode supplies or they will run hot and die. For general purpose use, probably will be fine.
2019-07-23
All as ordered 34 days .......
2019-09-21| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| MT40A512M8RH-062E:B TR DISTI # MT40A512M8RH-062E:BTR-ND | Micron Technology Inc | IC DRAM 4G PARALLEL 78FBGA RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| MT40A512M8RH-062E:B DISTI # MT40A512M8RH-062E:B-ND | Micron Technology Inc | IC DRAM 4G PARALLEL 1.6GHZ RoHS: Not compliant Min Qty: 1260 Container: Bulk | Limited Supply - Call | |
| MT40A512M8RH-062E:B | Micron Technology Inc | *** FREE SHIPPING ORDERS OVER $100 *** | 2 |
|
| 圖片 | 型號 | 描述 |
|---|---|---|
|
Mfr.#: MT40A512M16JY-083E IT:B OMO.#: OMO-MT40A512M16JY-083E-IT-B |
DRAM DDR4 8G 512MX16 FBGA |
|
|
Mfr.#: MT40A512M16JY-062E IT:B OMO.#: OMO-MT40A512M16JY-062E-IT-B |
DRAM DDR4 8G 512MX16 FBGA |
|
Mfr.#: MT40A512M8RH-083EIT:B |
全新原裝 |
|
|
Mfr.#: MT40A512M16JY-083E AAT:B |
DRAM Chip DDR4 SDRAM 8Gbit 512Mx16 1.2V Automotive 96-Pin FBGA |
|
|
Mfr.#: MT40A512M16LY-062E:E |
DDR4 8G 512MX16 FBGA |
|
|
Mfr.#: MT40A512M8RH-083E AAT:B TR |
IC DRAM 4G PARALLEL 1.2GHZ |
|
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Mfr.#: MT40A512M8SA-062E AUT:F |
IC DRAM 4G PARALLEL 78FBGA |
|
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Mfr.#: MT40A512M16HA-083E OMO.#: OMO-MT40A512M16HA-083E-1190 |
全新原裝 |
|
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Mfr.#: MT40A512M16JY-075E:B |
IC DRAM 8G PARALLEL 1.33GHZ |
|
Mfr.#: MT40A512M8HX-093E:A |
IC DRAM 4G PARALLEL 78FBGA |
