TPN2R304PL,L1Q

Mfr. #:: TPN2R304PL,L1Q
製造商:: Toshiba
描述:: MOSFET 40 Volt N-Channel
生命週期:: 製造商新產品
數據表:: TPN2R304PL,L1Q 數據表
交貨:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: TPN2R304PL,L1Q Datasheet TPN2R304PL,L1Q Datasheet (P4-P6)TPN2R304PL,L1Q Datasheet (P7-P9)TPN2R304PL,L1Q Datasheet (P10)
ECAD Model:

產品屬性
屬性值

製造商：: 東芝

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: TSON-Advance-8

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 40 V

Id - 連續漏極電流：: 80 A

Rds On - 漏源電阻：: 4 mOhms

Vgs th - 柵源閾值電壓：: 1.4 V

Vgs - 柵源電壓：: 20 V

Qg - 門電荷：: 41 nC

最低工作溫度：: - 55 C

最高工作溫度：: + 175 C

Pd - 功耗：: 104 W

配置：: 單身的

頻道模式：: 增強

打包：: 捲軸

高度：: 0.85 mm

長度：: 3.1 mm

系列：: TPN2R304PL

晶體管類型：: 1 N-Channel

寬度：: 3.1 mm

品牌：: 東芝

秋季時間：: 12.2 ns

產品類別：: MOSFET

上升時間：: 7.8 ns

出廠包裝數量：: 5000

子類別：: MOSFET

典型關斷延遲時間：: 37 ns

典型的開啟延遲時間：: 17.5 ns

Tags: TPN2R3, TPN2R, TPN2, TPN

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TPN2R304PL,L1Q 描述

***ical: Trans MOSFET N-CH Si 40V 100A 8-Pin TSON Advance

***el Electronic: IC BUFFER NON-INVERT SOT5

***i-Key: MOSFET N-CH 40V 80A 8TSON

***: TRANSISTOR PD=140W F=1MHZ

***ure Electronics: Single N-Channel 40 V 2.2 mOhm 37 nC OptiMOS Power Mosfet - TDSON-8

***ark: MOSFET, N-CH, 40V, 100A, 150DEG C, 69W; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

***ineon SCT: OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops, PG-TDSON-8, RoHS

***nell: MOSFET, N-CH, 40V, 100A, TDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0018ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 69W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: OptiMOS 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applictions; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Isolated DC-DC converters; Motor control; Or-ing switches

***(Formerly Allied Electronics): IRFR7440PBF N-channel MOSFET Transistor; 90 A; 40 V; 3-Pin DPAK

***ineon SCT: 40V Single N-Channel HEXFET Power MOSFET in a Lead Free D-Pak package, DPAK-3, RoHS

*** Source Electronics: MOSFET N CH 40V 90A DPAK / Trans MOSFET N-CH Si 40V 180A 3-Pin(2+Tab) DPAK T/R

***ure Electronics: Single N-Channel 40 V 2.4 mOhm 89 nC HEXFET® Power Mosfet - TO-252AA

*** Stop Electro: Power Field-Effect Transistor, 90A I(D), 40V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***nell: MOSFET, N-CH, 40V, 90A, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 90A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0019ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 140W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C

***ineon: Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: AC-DC; Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull

***ure Electronics: Single N-Channel 40 V 2.4 mOhm 92 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

***ineon SCT: 40V Single N-Channel HEXFET Power MOSFET in a Lead Free PQFN 5x6mm package, PG-TDSON-8, RoHS

***ark: T&R / MOSFET, 40V, 85A, 2.4 mOhm, 92 nC Qg, PQFN56

*** Source Electronics: Trans MOSFET N-CH Si 40V 159A 8-Pin QFN EP T/R / MOSFET N-CH 40V 85A 8PQFN

***roFlash: Power Field-Effect Transistor, 85A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***Yang: Trans MOSFET N-CH 40V 85A 8-Pin PQFN T/R 4k - Tape and Reel

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: PQFN-8 (3x3) Polarity: N Variants: Enhancement mode Power dissipation: 104 W

***ineon: Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Push-Pull

***nell: MOSFET, N-CH, 40V, 85A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:85A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PQFN; No. of Pins:5; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C

***ical: Trans MOSFET N-CH 40V 31A Automotive 8-Pin PowerDI EP T/R

***des Inc SCT: 40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS

***ure Electronics: MOSFET BVDSS: 31V~40V PowerDI5060-8 T&R 2.5K

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 31A I(D), 40V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***el Electronic: MOSFET N-CH 40V 31A PWRDI5060-8

***ical: Trans MOSFET N-CH 40V 26A Automotive 8-Pin PowerDI EP T/R

***ark: Mosfet, N-Ch, 40V, 90A, Powerdi 5060 Rohs Compliant: Yes

***des Inc SCT: 60V N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS

***et: MOSFET BVDSS: 31V~40V POWERDI5060-8 T&R 2.5K

***ark: Mosfet, N-Ch, 40V, 100A, Powerdi 5060 Rohs Compliant: Yes

***ical: Trans MOSFET N-CH 40V 31A 8-Pin PowerDI EP T/R

***des Inc SCT: 40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS

***ure Electronics: MOSFET BVDSS: 31V~40V PowerDI5060-8 T&R 2.5K

Market price

型號	製造商	描述	庫存	價格
TPN2R304PL,L1Q DISTI # TPN2R304PLL1QCT-ND	Toshiba America Electronic Components	MOSFET N-CH 40V 80A TSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	19990In Stock	1000:$0.3280 500:$0.4099 100:$0.5534 10:$0.7170 1:$0.8200
TPN2R304PL,L1Q DISTI # TPN2R304PLL1QDKR-ND	Toshiba America Electronic Components	MOSFET N-CH 40V 80A TSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	19990In Stock	1000:$0.3280 500:$0.4099 100:$0.5534 10:$0.7170 1:$0.8200
TPN2R304PL,L1Q DISTI # TPN2R304PLL1QTR-ND	Toshiba America Electronic Components	MOSFET N-CH 40V 80A TSON RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	15000In Stock	5000:$0.2786
TPN2R304PLL1Q DISTI # TPN2R304PL,L1Q	Toshiba America Electronic Components	Pb-F POWER MOSFET TRANSISTOR TSON-ADV PD=140W F=1MHZ - Tape and Reel (Alt: TPN2R304PL,L1Q) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$0.3109 10000:$0.2929 20000:$0.2759 30000:$0.2619 50000:$0.2549
TPN2R304PLL1Q(M DISTI # TPN2R304PL,L1Q(M	Toshiba America Electronic Components	Trans MOSFET N 40V 80A 8-Pin TSON (Alt: TPN2R304PL,L1Q(M) RoHS: Compliant Min Qty: 5000	Asia - 0
TPN2R304PL,L1Q DISTI # 757-TPN2R304PLL1Q	Toshiba America Electronic Components	MOSFET 40 Volt N-Channel RoHS: Compliant	94020	1:$0.9100 10:$0.7100 100:$0.4580 1000:$0.3670 5000:$0.3090 10000:$0.2710 25000:$0.2590

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