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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| SI6433BDQ-T1-E3 DISTI # SI6433BDQ-T1-E3TR-ND | Vishay Siliconix | MOSFET P-CH 12V 4A 8-TSSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SI6433BDQ-T1-E3 DISTI # SI6433BDQ-T1-E3CT-ND | Vishay Siliconix | MOSFET P-CH 12V 4A 8-TSSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| SI6433BDQ-T1-E3 DISTI # SI6433BDQ-T1-E3DKR-ND | Vishay Siliconix | MOSFET P-CH 12V 4A 8-TSSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| SI6433BDQ-T1-GE3 DISTI # SI6433BDQ-T1-GE3TR-ND | Vishay Siliconix | MOSFET P-CH 12V 4A 8-TSSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SI6433BDQ-T1-GE3 DISTI # SI6433BDQ-T1-GE3CT-ND | Vishay Siliconix | MOSFET P-CH 12V 4A 8-TSSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| SI6433BDQ-T1-GE3 DISTI # SI6433BDQ-T1-GE3DKR-ND | Vishay Siliconix | MOSFET P-CH 12V 4A 8-TSSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| SI6433BDQ-T1-GE3 DISTI # 781-SI6433BDQ-T1-GE3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI6423DQ-T1-GE3 RoHS: Compliant | 0 | |
| SI6433BDQ-T1-E3 DISTI # 781-SI6433BDQ-T1-E3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI6423DQ-T1-GE3 RoHS: Compliant | 0 | |
| SI6433BDQ-T1 | Vishay Intertechnologies | 970 | ||
| SI6433BDQ-T1-GE3 | Vishay Intertechnologies | 1100 | ||
| SI6433BDQ-T1-GE3 DISTI # 1690240 | Vishay Intertechnologies | P CHANNEL MOSFET, -12V, 4.8A, TSSOP RoHS: Compliant | 0 |
|
| SI6433BDQT1E3 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 4A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 9000 |
| 圖片 | 型號 | 描述 |
|---|---|---|
|
Mfr.#: SI6441DQ-T1-GE3 OMO.#: OMO-SI6441DQ-T1-GE3 |
MOSFET 30V 8.0A 1.75W 15mohm @ 10V |
|
Mfr.#: SI6404DQ-T1 OMO.#: OMO-SI6404DQ-T1-1190 |
MOSFET RECOMMENDED ALT 781-SI3410DV-GE3 |
|
Mfr.#: SI6404DQ-T1-GE3 OMO.#: OMO-SI6404DQ-T1-GE3-VISHAY |
MOSFET N-CH 30V 8.6A 8TSSOP |
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Mfr.#: SI6415DQT1E3 OMO.#: OMO-SI6415DQT1E3-1190 |
全新原裝 |
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Mfr.#: SI6415DQT1GE3 OMO.#: OMO-SI6415DQT1GE3-1190 |
Power Field-Effect Transistor, 6.5A I(D), 30V, 0.019ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: SI6426OQ-T1 OMO.#: OMO-SI6426OQ-T1-1190 |
全新原裝 |
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Mfr.#: SI6463DQ-T1 OMO.#: OMO-SI6463DQ-T1-1190 |
MOSFET RECOMMENDED ALT 78-SIS407ADN-T1-GE3 |
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Mfr.#: SI6465DQT1 OMO.#: OMO-SI6465DQT1-1190 |
Power Field-Effect Transistor, 8.8A I(D), 8V, 0.012ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: SI6466ADQT1GE3 OMO.#: OMO-SI6466ADQT1GE3-1190 |
Small Signal Field-Effect Transistor, 6.8A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: SI6467DY-T1 OMO.#: OMO-SI6467DY-T1-1190 |
全新原裝 |