S29GL512S11TFB010

Mfr. #:: S29GL512S11TFB010
製造商:: Cypress Semiconductor
描述:: NOR Flash Nor
生命週期:: 製造商新產品
數據表:: S29GL512S11TFB010 數據表
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更多信息:: S29GL512S11TFB010 更多信息 S29GL512S11TFB010 Product Details

產品屬性
屬性值

製造商：: 賽普拉斯半導體

產品分類：: NOR閃存

RoHS：: Y

安裝方式：: 貼片/貼片

包裝/案例：: TSOP-56

系列：: S29GL512S

內存大小：: 512 Mbit

接口類型：: 平行線

組織：: 64 M x 8

計時類型：: 異步

數據總線寬度：: 8 bit

電源電壓 - 最小值：: 2.7 V

電源電壓 - 最大值：: 3.6 V

電源電流 - 最大值：: 100 mA

資質：: AEC-Q100

打包：: 托盤

內存類型：: 也不

速度：: 110 ns

建築學：: MirrorBit Eclipse

品牌：: 賽普拉斯半導體

濕氣敏感：: 是的

產品類別：: NOR閃存

標準：: 通用閃存接口 (CFI)

出廠包裝數量：: 91

子類別：: 內存和數據存儲

Tags: S29GL512S11TFB01, S29GL512S11TFB, S29GL512S11T, S29GL512S11, S29GL512S, S29GL5, S29GL, S29G, S29

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

S29GL512S11TFB010 描述

***ress Semiconductor SCT: Parallel NOR Flash Memory, 512 Mbit Density, 110 ns Initial Access Time, TSOP-56, RoHS

***ark: Tray Pkged / 512 Mbit, 3V, 110Ns, 56-Lead Tsop, Page Mode Flash Memory Featuring 65 Nm Mirrorbit Process Technology, Highest Address Sector Protected

***i-Key: IC FLASH 512MBIT PARALLEL 56TSOP

***pmh: NON-VOLATILE SRAM, 64KX8 PDSO16

***ress Semiconductor SCT: Parallel NOR Flash Memory, 16 Mbit Density, 70 ns Initial Access Time, TSOP-48, RoHS

*** Source Electronics: IC FLASH 16MBIT 70NS 48TSOP / NOR Flash Parallel 3V/3.3V 16M-bit 2M x 8/1M x 16 70ns 48-Pin TSOP Tray

***ure Electronics: S29AL016J Series 16 Mb (2M x 8) 70 ns CMOS 3 V-Only Flash Memory - TSOP-48

*** Electronics: Non-Volatile FLASH 16Mb (2M x 8, 1M x 16) Parallel TSOP-48 FLASH RoHS

***ment14 APAC: IC, MEMORY, FLASH, 16M, 3V, 48TSOP; Memory Type:Boot Sector Flash; Memory Size:16MB; Memory Configuration:2M x 8, 1M x 16; Interface Type:CFI; Supply Voltage Range:2.7V to 3.6V; Memory Case Style:TSOP; No. of Pins:48; Operating Temperature Range:-40°C to +85°C; Access Time:70ns; Interface:Parallel; Memory Configuration:2M x 8b / 1M x 16b; Memory Type:Flash

***ure Electronics: GL-N Series 32 M (4M x 8, 2M x 16) 3.6 V Surface Mount Flash Memory - TSOP-56

***ress Semiconductor SCT: Parallel NOR Flash Memory, 32 Mbit Density, 90 ns Initial Access Time, TSOP-56, RoHS

***et: NOR Flash Parallel 3V/3.3V 32Mbit 4M/2M x 8bit/16bit 90ns 56-Pin TSOP Tray

***trelec: Flash mem. Operating temperature: -40...+85 °C Power supply: 2.7...3.6 V Boot Block: Uniform (Low Protected) Organisation: 4 M x 8/2 M x 16 Package: TSOP-56 Memory size: 32 Mbit

***ark: MirrorBit Flash Memory; Memory Type:Flash; Interface Type:CFI; Memory Size:4MB; Memory Voltage, Vcc:3.0 V; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Termination Type:SMD; Package/Case:56-TSOP; No. of Pins:56

***ress Semiconductor SCT: Parallel NOR Flash Memory, 32 Mbit Density, 90 ns Initial Access Time, TSOP-48, RoHS

***ure Electronics: GL-N Series 32 M (4 M x 8/2 M x 16) 3.6 V Page Mode Flash Memory - TSOP-48

***et: NOR Flash Parallel 3V/3.3V 32Mbit 4M/2M x 8bit/16bit 90ns 48-Pin TSOP Tray

***enic: 32Mb (4M x 8 2M x 16) Parallel FLASH Non-Volatile TSOP-48 NOR FLASH ROHS

***rochip SCT: Parallel Flash, 2.7 - 3.6 V, 64 Mbit, x16, 70 ns, -40°C to +85°C, TSOP-48, RoHS

***ical: NOR Flash Parallel 3.3V 64M-bit 4M x 16 70ns 48-Pin TSSOP Tray

***et: Flash Parallel 3.3V 64Mbit 4M x 16bit 48-Pin TSOP

***et: SLC NAND Flash Parallel 3.3V 1Gbit 128M x 8Bit 48-Pin TSOP-I

***-Wing Technology: 3A991.B.1.A Surface Mount MT29F1G08 Tray ic memory 25ns 18.4mm 35mA 1Gb

***i-Key: IC FLASH 1GBIT PARALLEL 48TSOP I

*** Services: CoC and 2-years warranty / RFQ for pricing

***DA Technology Co., Ltd.: Product Description Demo for Development.

***nell: FLASH MEMORY, 1GBIT, -40 TO 85DEG C; Flash Memory Type: SLC NAND; Memory Size: 1Gbit; Flash Memory Configuration: 128M x 8bit; IC Interface Type: Parallel; Memory Case Style: TSOP-I; No. of Pins: 48Pins; Clock Frequency: -; Access Time: 25ns; Supply Voltage Min: 2.7V; Supply Voltage Max: 3.6V; Operating Temperature Min: -40°C; Operating Temperature Max: 85°C; Product Range: 3.3V SLC NAND Flash Memories; SVHC: No SVHC (27-Jun-2018)

***Yang: Flash Mem Parallel 3.3V 1Mbit 512K x 8-Bit 70ns 32-Pin TSOP T/R - Tape and Reel

***rochip SCT: Parallel Flash, 2.7 - 3.6 V, 4 Mbit, x8, 70 ns, -40°C to +85°C, TSOP-32, RoHS

***rochip: 2.7V to 3.6V 4Mbit Multi-Purpose Flash

Market price

型號	製造商	描述	庫存	價格
S29GL512S11TFB010 DISTI # S29GL512S11TFB010-ND	Cypress Semiconductor	IC FLASH 512M PARALLEL 56TSOP RoHS: Compliant Min Qty: 91 Container: Tray	Temporarily Out of Stock	91:$9.9267
S29GL512S11TFB010 DISTI # 51Y2119	Cypress Semiconductor	TRAY PKGED / 512 MBIT, 3V, 110NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, HIGHEST ADDRESS SECTOR PROTECTED	0	500:$7.5400 250:$7.7800 100:$8.8800 50:$9.4000 25:$10.4400 10:$10.7300 1:$11.4900
S29GL512S11TFB010 DISTI # 727-S29GL512S11TFB01	Cypress Semiconductor	NOR Flash Nor RoHS: Compliant	0	1:$12.7600 10:$11.6000 25:$10.7300 50:$9.8600
S29GL512S11TFB010YZK000 DISTI # 727-S29GL512S11TFB00	Cypress Semiconductor	NOR Flash Nor RoHS: Compliant	0	1:$11.2700 10:$10.2400 25:$9.4700 50:$8.7000
S29GL512S11TFB010YZK001 DISTI # 727-S29GL51211010001	Cypress Semiconductor	NOR Flash NOR RoHS: Compliant	0	91:$12.8200 273:$11.6900 546:$10.9300
S29GL512S11TFB010	Spansion	Flash, 64MX8, 110ns, PDSO56 RoHS: Not Compliant	90	1000:$8.7800 500:$9.2400 100:$9.6200 25:$10.0300 1:$10.8000

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