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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| IPI147N12N3GAKSA1 DISTI # V99:2348_06384034 | Infineon Technologies AG | Trans MOSFET N-CH 120V 56A Automotive 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant | 300 |
|
| IPI147N12N3GAKSA1 DISTI # IPI147N12N3GAKSA1-ND | Infineon Technologies AG | MOSFET N-CH 120V 56A TO262-3 RoHS: Compliant Min Qty: 500 Container: Tube | Temporarily Out of Stock |
|
| IPI147N12N3GAKSA1 DISTI # 26197739 | Infineon Technologies AG | Trans MOSFET N-CH 120V 56A Automotive 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant | 300 |
|
| IPI147N12N3GAKSA1 DISTI # IPI147N12N3GAKSA1 | Infineon Technologies AG | Trans MOSFET N-CH 120V 56A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI147N12N3GAKSA1) RoHS: Compliant Min Qty: 1000 Container: Tube | Americas - 0 |
|
| IPI147N12N3GAKSA1 DISTI # SP000652744 | Infineon Technologies AG | Trans MOSFET N-CH 120V 56A 3-Pin(3+Tab) TO-262 (Alt: SP000652744) RoHS: Compliant Min Qty: 1 | Europe - 0 |
|
| IPI147N12N3G | Infineon Technologies AG | Power Field-Effect Transistor, 56A I(D), 120V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant | 15175 |
|
| IPI147N12N3GAKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 56A I(D), 120V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant | 14000 |
|
| IPI147N12N3 G DISTI # 726-IPI147N12N3G | Infineon Technologies AG | MOSFET N-Ch 120V 56A I2PAK-3 OptiMOS 3 RoHS: Compliant | 1000 |
|
| IPI147N12N3GAKSA1 DISTI # C1S322000525386 | Infineon Technologies AG | Trans MOSFET N-CH 120V 56A Automotive 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant | 300 |
|
| 圖片 | 型號 | 描述 |
|---|---|---|
|
Mfr.#: IPI147N12N3 G OMO.#: OMO-IPI147N12N3-G |
MOSFET N-Ch 120V 56A I2PAK-3 OptiMOS 3 |
|
Mfr.#: IPI147N12N3GAKSA1 |
MOSFET N-CH 120V 56A TO262-3 |
|
Mfr.#: IPI147N12N3G OMO.#: OMO-IPI147N12N3G-1190 |
Power Field-Effect Transistor, 56A I(D), 120V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
|
|
Mfr.#: IPI147N12N3 G OMO.#: OMO-IPI147N12N3-G-124 |
Darlington Transistors MOSFET N-Ch 120V 56A I2PAK-3 OptiMOS 3 |
