TGF2978-SM

TGF2978-SM
Mfr. #:
TGF2978-SM
製造商:
Qorvo
描述:
RF JFET Transistors 8-12GHz 20W GaN PAE 50% Gain 11dB
生命週期:
製造商新產品
數據表:
TGF2978-SM 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
TGF2978-SM 更多信息
產品屬性
屬性值
製造商:
科沃
產品分類:
射頻 JFET 晶體管
RoHS:
Y
晶體管類型:
HEMT
技術:
氮化鎵碳化矽
獲得:
13 dB
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
32 V
Vgs - 柵源擊穿電壓:
- 2.7 V
Id - 連續漏極電流:
326 mA
輸出功率:
6 W
最高工作溫度:
+ 225 C
Pd - 功耗:
8.4 W
安裝方式:
貼片/貼片
包裝/案例:
QFN-16
打包:
托盤
配置:
單身的
高度:
0.203 mm
長度:
3 mm
工作頻率:
DC to 12 GHz
類型:
氮化鎵碳化矽 HEMT
寬度:
3 mm
品牌:
科沃
通道數:
1 Channel
開發套件:
TGF2977-SMEVB1
濕氣敏感:
是的
產品類別:
射頻 JFET 晶體管
出廠包裝數量:
50
子類別:
晶體管
第 # 部分別名:
1127257
單位重量:
0.002014 oz
Tags
TGF297, TGF29, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC - 12 GHz, 20 W, 11 dB, 32 V, GaN, Plastic QFN
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
TGF297x GaN RF Transistor
Qorvo TGF297x GaN RF Transistors have a frequency range of DC to 12GHz. The TGF2970 transistors offer output power from 6W up to 22W. The TGF2970 transistors are constructed using a TQGaN25 process, which features field plate techniques to optimize power and efficiency at high drain bias operation. Learn More
型號 製造商 描述 庫存 價格
TGF2978-SM
DISTI # 772-TGF2978-SM
QorvoRF JFET Transistors 8-12GHz 20W GaN PAE 50% Gain 11dB
RoHS: Compliant
143
  • 1:$49.6000
  • 25:$42.9000
  • 100:$37.1000
TGF2978-SM-EVB
DISTI # 772-TGF2978-SM-EVB
QorvoRF Development Tools
RoHS: Compliant
0
  • 1:$875.0000
圖片 型號 描述
C1608X7R2A102K080AA

Mfr.#: C1608X7R2A102K080AA

OMO.#: OMO-C1608X7R2A102K080AA-TDK

Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 1000pF 100volts X7R 10%
可用性
庫存:
143
訂購:
2126
輸入數量:
TGF2978-SM的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$49.60
US$49.60
25
US$42.90
US$1 072.50
100
US$37.10
US$3 710.00
250
US$34.51
US$8 627.50
由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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