IS43TR85120AL-125KBL-TR

IS43TR85120AL-125KBL-TR
Mfr. #:
IS43TR85120AL-125KBL-TR
製造商:
ISSI
描述:
DRAM 4G, 1.35V, 1600MT/s 512M x 8 DDR3L
生命週期:
製造商新產品
數據表:
IS43TR85120AL-125KBL-TR 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
IS43TR85120AL-125KBL-TR 更多信息
產品屬性
屬性值
製造商:
國際空間站
產品分類:
動態隨機存取存儲器
RoHS:
Y
類型:
SDRAM - DDR3L
數據總線寬度:
8 bit
組織:
512 M x 8
包裝/案例:
BGA-78
內存大小:
4 Gbit
最大時鐘頻率:
933 MHz
訪問時間:
-
電源電壓 - 最大值:
1.45 V
電源電壓 - 最小值:
1.283 V
電源電流 - 最大值:
230 mA
最低工作溫度:
0 C
最高工作溫度:
+ 95 C
系列:
IS43TR85120AL
打包:
捲軸
品牌:
國際空間站
安裝方式:
貼片/貼片
濕氣敏感:
是的
產品類別:
動態隨機存取存儲器
出廠包裝數量:
1500
子類別:
內存和數據存儲
Tags
IS43TR85120AL-12, IS43TR85120AL, IS43TR85120A, IS43TR85, IS43TR8, IS43T, IS43, IS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
4G, 1.35V, DDR3L, 512Mx8, 1600MT/s @ 11-11-11, 78 ball BGA (9mm x10.5mm) RoHS, T&R
***et
DRAM Chip DDR3 SDRAM 4G-Bit 512M x 8 1.35V 78-Pin TW-BGA T/R
***i-Key
IC DRAM 4G PARALLEL 78TWBGA
4GBit DDR3 SDRAM
ISSI 4GBit DDR3 SDRAM delivers high speed SDRAM in compact BGA-78 and BGA-96 packages. ISSI 4GBit DDR3 SDRAM features 256Mx16 organization and supply voltage at either 1.45V or 1.3V with a maximum clock frequency of 666MHz or 800MHz. This SDRAM has 8 internal banks for concurrent operation and 8nBit pre-fetch architecture. Applications include Telecom and Networking, Automotive, and Industrial embedded computing.
DDR3 SDRAM
ISSI DDR3 SDRAM delivers high-speed data transfer rates up to 2133Mbps in a small BGA-96 or BGA-78 package. ISSI DDR3 SDRAM is available in a 64Mx16, 128Mx8, 128Mx16, 256Mx8, or  256Mx16 organization. Features include bidirectional differential data strobe, data masking per byte on Write commands, programmable burst length of 4 or 8, and programmable CAS latency. The ISSI DDR3 SDRAMs are well-suited for telecom & networking, automotive, and industrial embedded computing.
圖片 型號 描述
IS43TR85120AL-125KBL-TR

Mfr.#: IS43TR85120AL-125KBL-TR

OMO.#: OMO-IS43TR85120AL-125KBL-TR

DRAM 4G, 1.35V, 1600MT/s 512M x 8 DDR3L
IS43TR85120BL-125KBLI-TR

Mfr.#: IS43TR85120BL-125KBLI-TR

OMO.#: OMO-IS43TR85120BL-125KBLI-TR

DRAM 4G, 1.35V, DDR3L, 512Mx8, 1600MT/s @ 11-11-11, 78 ball BGA (9mm x10.5mm) RoHS, IT, T&R
IS43TR85120A-125KBLI-TR

Mfr.#: IS43TR85120A-125KBLI-TR

OMO.#: OMO-IS43TR85120A-125KBLI-TR

DRAM 4G, 1.5V, 1600MT/s 512M x 8 DDR3
IS43TR85120A-15HBLI-TR

Mfr.#: IS43TR85120A-15HBLI-TR

OMO.#: OMO-IS43TR85120A-15HBLI-TR

DRAM 4G, 1.5V, 1333MT/s 512M x 8 DDR3
IS43TR85120AL-125KBLI-TR

Mfr.#: IS43TR85120AL-125KBLI-TR

OMO.#: OMO-IS43TR85120AL-125KBLI-TR

DRAM 4G, 1.35V, 1600MT/s 512M x 8 DDR3L
IS43TR85120A-15HBLI

Mfr.#: IS43TR85120A-15HBLI

OMO.#: OMO-IS43TR85120A-15HBLI

DRAM 4G, 1.5V, 1333MT/s 512M x 8 DDR3
IS43TR85120B-125KBL

Mfr.#: IS43TR85120B-125KBL

OMO.#: OMO-IS43TR85120B-125KBL

DRAM 4G, 1.5V, DDR3, 512Mx8, 1600MT/s @ 11-11-11, 78 ball BGA (9mm x10.5mm) RoHS
IS43TR85120A-125KBL-TR

Mfr.#: IS43TR85120A-125KBL-TR

OMO.#: OMO-IS43TR85120A-125KBL-TR-INTEGRATED-SILICON-SOLUTION

DRAM 4G, 1.5V, 1600MT/s 512M x 8 DDR3
IS43TR85120AL-125KBL

Mfr.#: IS43TR85120AL-125KBL

OMO.#: OMO-IS43TR85120AL-125KBL-INTEGRATED-SILICON-SOLUTION

DRAM 4G, 1.35V, 1600MT/s 512M x 8 DDR3L
IS43TR85120A-125KBLI-

Mfr.#: IS43TR85120A-125KBLI-

OMO.#: OMO-IS43TR85120A-125KBLI--1190

全新原裝
可用性
庫存:
Available
訂購:
4500
輸入數量:
IS43TR85120AL-125KBL-TR的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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