IKB20N60TATMA1

Mfr. #:: IKB20N60TATMA1
製造商:: Infineon Technologies
描述:: IGBT Transistors Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop
生命週期:: 製造商新產品
數據表:: IKB20N60TATMA1 數據表
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ECAD Model:

產品屬性
屬性值

製造商：: 英飛凌

產品分類：: IGBT晶體管

技術：: 矽

包裝/案例：: TO-263-3

系列：: 止溝IGBT

打包：: 捲軸

品牌：: 英飛凌科技

產品類別：: IGBT晶體管

子類別：: IGBT

商品名：: 戰壕

第 # 部分別名：: IKB20N60T IKB2N6TXT SP000054883

Tags: IKB20N60TA, IKB20N60T, IKB20N60, IKB2, IKB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IKB20N60TATMA1 描述

***ical: Trans IGBT Chip N-CH 600V 40A 166000mW Automotive 3-Pin(2+Tab) D2PAK T/R

***ment14 APAC: IGBT+ DIODE,600V,20A,TO263; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:166W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:166W

***ineon SCT: The 600 V, 20 A hard-switching TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO263 D2Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO263-3, RoHS

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications

Market price

型號	製造商	描述	庫存	價格
IKB20N60TATMA1 DISTI # V36:1790_06377893	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 40A 166000mW Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	2000:$1.5580 1000:$1.6510
IKB20N60TATMA1 DISTI # V72:2272_06377893	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 40A 166000mW Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	0
IKB20N60TATMA1 DISTI # IKB20N60TATMA1TR-ND	Infineon Technologies AG	IGBT 600V 40A 166W TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	1000In Stock	2000:$1.5761 1000:$1.6549
IKB20N60TATMA1 DISTI # IKB20N60TATMA1CT-ND	Infineon Technologies AG	IGBT 600V 40A 166W TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1000In Stock	500:$2.0211 100:$2.3742 10:$2.8980 1:$3.2300
IKB20N60TATMA1 DISTI # IKB20N60TATMA1DKR-ND	Infineon Technologies AG	IGBT 600V 40A 166W TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1000In Stock	500:$2.0211 100:$2.3742 10:$2.8980 1:$3.2300
IKB20N60TATMA1 DISTI # 33791205	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 40A 166000mW Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	1000:$1.3287
IKB20N60TATMA1 DISTI # 33138843	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 40A 166000mW Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	1000:$1.6510
IKB20N60TATMA1 DISTI # SP000054883	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 41A 3-Pin TO-263 T/R (Alt: SP000054883) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	10000:€1.0900 6000:€1.1900 4000:€1.2900 2000:€1.3900 1000:€1.6900
IKB20N60TXT DISTI # IKB20N60TATMA1	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 40A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IKB20N60TATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	6000:$1.3900 10000:$1.3900 2000:$1.4900 4000:$1.4900 1000:$1.5900
IKB20N60T DISTI # 726-IKB20N60T	Infineon Technologies AG	IGBT Transistors LOW LOSS DuoPack 600V 20A RoHS: Compliant	1198	1:$2.9800 10:$2.5300 100:$2.1900 250:$2.0800 500:$1.8600 1000:$1.5700 2000:$1.4900 5000:$1.4400
IKB20N60TATMA1 DISTI # 1832364	Infineon Technologies AG	IGBT+ DIODE,600V,20A,TO263	1000	500:£1.2200 250:£1.2500 100:£1.2800 10:£1.3000 1:£1.3300

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