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BSZ100N03MSGATMA1

BSZ100N03MSGATMA1
Mfr. #:
BSZ100N03MSGATMA1
製造商:
Infineon Technologies
描述:
MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M
生命週期:
製造商新產品
數據表:
BSZ100N03MSGATMA1 數據表
交貨:
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ECAD Model:
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
TSDSON-8
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
30 V
Id - 連續漏極電流：
40 A
Rds On - 漏源電阻：
7.3 mOhms
Vgs th - 柵源閾值電壓：
1 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
23 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
30 W
配置：
單身的
頻道模式：
增強
商品名：
優化MOS
打包：
捲軸
高度：
1.1 mm
長度：
3.3 mm
系列：
OptiMOS 3M
晶體管類型：
1 N-Channel
寬度：
3.3 mm
品牌：
英飛凌科技
正向跨導 - 最小值：
26 S
秋季時間：
2.4 ns
產品類別：
MOSFET
上升時間：
2.8 ns
出廠包裝數量：
5000
子類別：
MOSFET
典型關斷延遲時間：
16 ns
典型的開啟延遲時間：
3.8 ns
第 # 部分別名：
BSZ100N03MS BSZ1N3MSGXT G SP000311510
單位重量：
0.001270 oz
Tags
BSZ100N03MSG, BSZ100N03M, BSZ100N03, BSZ100, BSZ10, BSZ1, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 9.1 mOhm 17 nC OptiMOS™ Power Mosfet - TSDSON-8
***ment14 APAC
MOSFET, N CH, 40A, 30V, PG-TSDSON-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:30W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:40A; Power Dissipation Pd:30W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TSDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 3mm X 3mm PQFN package, PQFN 3X3 8L, RoHS
***(Formerly Allied Electronics)
MOSFET, 30V, 16A, 7.1 MOHM, 9.6 NC QG, PQFN33
***Yang
Trans MOSFET N-CH 30V 16A 8-Pin QFN T/R - Tape and Reel
***ark
Transistor; Continuous Drain Current, Id:16A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V; Power Dissipation, Pd:2.8W ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Low RDS(on); 100% Rg tested; Compatible with Existing Surface Mount Techniques; Very Low Gate Charge; Low Junction to PCB Thermal Resistance; Fully Characterized Avalanche Voltage and Current; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
***et Japan
Transistor MOSFET Array Dual N-CH 30V 60A/145A 8-Pin Power 56 T/R
***emi
Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V
***ure Electronics
Dual N-Channel 30 V 8 /1.8 mO 21 / 62 nC PowerTrench Asymmetric Mosfet - Power56
*** Stop Electro
Small Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
***nell
MOSFET, DUAL N CH, 30V, 60A, POWER 56-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:2.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:-; SVHC:No SVHC (20-Jun-2013)
***emi
Power MOSFET 25V 72A 8 mOhm Single N-Channel DPAK
***Yang
Trans MOSFET N-CH 25V 32A 3-Pin(2+Tab) DPAK T/R - Tape and Reel
***r Electronics
Power Field-Effect Transistor, 32A I(D), 25V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ser
MOSFETs- Power and Small Signal 25V 75A N-Channel
***ment14 APAC
N CHANNEL MOSFET, 25V, 75A, D-PAK
***ure Electronics
Single N-Channel 30 V 8.7 mOhm 12 nC HEXFET® Power Mosfet - PQFN-5 x 6 mm
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PQFN 5X6 8L, RoHS
***(Formerly Allied Electronics)
MOSFET, 30V, 14A, 8.7 MOHM, 8.1 NC QG, PQFN56
***ment14 APAC
MOSFET, N CH, 30V, 14A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Current Id Max:15A; Package / Case:PQFN; Power Dissipation Pd:3.1W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ineon
Benefits: RoHS Compliant; Industry-leading quality; 100% Rg tested; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Fully Characterized Avalanche Voltage and Current | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Point of Load ControlFET
***ure Electronics
Single N-Channel 30 V 6 mOhm 15 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS
***et
Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R
***nell
MOSFET,N CH,DIODE,30V,21A,PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Current Id Max:21A; Voltage Vgs Max:20V
***ineon
Benefits: RoHS Compliant; Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
***emi
PowerTrench® MOSFET, N-Channel, 25V, 35A, 8.5mΩ
***ure Electronics
N-Channel 25 V 35 A 8.5 mOhm PowerTrench® MOSFET- TO-252AA
*** Stop Electro
Power Field-Effect Transistor, 35A I(D), 25V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***el Electronic
Rectangular Connectors - Headers, Receptacles, Female Sockets 2 Socket Solder Beryllium Copper Through Hole Bulk Gold Polycyclohexylenedimethylene Terephthalate (PCT), Polyester, Glass Filled 10 CONN SOCKET 10POS 0.1 GOLD PCB
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
***nell
MOSFET, N CH, 25V, 35A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.0065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 50W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
型號 製造商 描述 庫存 價格
BSZ100N03MSGATMA1
DISTI # V72:2272_06391002		Infineon Technologies AGTrans MOSFET N-CH 30V 10A 8-Pin TSDSON EP T/R
RoHS: Compliant		13892
  • 6000:$0.2354
  • 3000:$0.2493
  • 1000:$0.2562
  • 500:$0.2928
  • 250:$0.3045
  • 100:$0.3111
  • 25:$0.4256
  • 10:$0.4506
  • 1:$0.5167
BSZ100N03MSGATMA1
DISTI # BSZ100N03MSGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 40A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		5000In Stock
  • 5000:$0.2784
BSZ100N03MSGATMA1
DISTI # BSZ100N03MSGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 30V 40A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5000In Stock
  • 1000:$0.3399
  • 500:$0.4249
  • 100:$0.5736
  • 10:$0.7440
  • 1:$0.8500
BSZ100N03MSGATMA1
DISTI # BSZ100N03MSGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 30V 40A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5000In Stock
  • 1000:$0.3399
  • 500:$0.4249
  • 100:$0.5736
  • 10:$0.7440
  • 1:$0.8500
BSZ100N03MSGATMA1
DISTI # 26195701		Infineon Technologies AGTrans MOSFET N-CH 30V 10A 8-Pin TSDSON EP T/R
RoHS: Compliant		13892
  • 6000:$0.2350
  • 3000:$0.2489
  • 1000:$0.2558
  • 500:$0.2923
  • 250:$0.3039
  • 100:$0.3106
  • 31:$0.4245
BSZ100N03MSGATMA1
DISTI # 31291407		Infineon Technologies AGTrans MOSFET N-CH 30V 10A 8-Pin TSDSON EP T/R
RoHS: Compliant		10000
  • 5000:$0.1968
BSZ100N03MSGATMA1
DISTI # BSZ100N03MSGATMA1		Infineon Technologies AGTrans MOSFET N-CH 30V 10A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ100N03MSGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.2159
  • 10000:$0.2079
  • 20000:$0.1999
  • 30000:$0.1939
  • 50000:$0.1899
BSZ100N03MSGATMA1
DISTI # SP000311510		Infineon Technologies AGTrans MOSFET N-CH 30V 10A 8-Pin TSDSON T/R (Alt: SP000311510)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 5000:€0.2949
  • 10000:€0.2409
  • 20000:€0.2209
  • 30000:€0.2039
  • 50000:€0.1899
BSZ100N03MSGATMA1
DISTI # 97Y1269		Infineon Technologies AGMOSFET, N-CH, 30V, 40A, PG-TSDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0091ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes0
  • 1:$0.7000
  • 10:$0.5820
  • 25:$0.5130
  • 50:$0.4440
  • 100:$0.3750
  • 250:$0.3500
  • 500:$0.3250
  • 1000:$0.3000
BSZ100N03MSGATMA1
DISTI # 726-BSZ100N03MSGATMA		Infineon Technologies AGMOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M
RoHS: Compliant		8354
  • 1:$0.7000
  • 10:$0.5820
  • 100:$0.3750
  • 1000:$0.3000
  • 5000:$0.2540
BSZ100N03MS G
DISTI # 726-BSZ100N03MSG		Infineon Technologies AGMOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M
RoHS: Compliant		3964
  • 1:$0.7200
  • 10:$0.6000
  • 100:$0.3900
  • 1000:$0.3100
  • 5000:$0.2600
BSZ100N03MSGATMA1
DISTI # 1336711		Infineon Technologies AGMOSFET OPTIMOS3 30V 40A 11.4MOHM TSDSON8, RL9980
  • 5000:£0.1930
  • 15000:£0.1850
BSZ100N03MSGATMA1
DISTI # 2617466		Infineon Technologies AGMOSFET, N-CH, 30V, 40A, PG-TSDSON-8
RoHS: Compliant		2484
  • 5:£0.4430
  • 25:£0.3650
  • 100:£0.2870
  • 250:£0.2670
  • 500:£0.2480
BSZ100N03MSGATMA1
DISTI # C1S322000523616		Infineon Technologies AGMOSFETs
RoHS: Compliant		13892
  • 250:$0.3039
  • 100:$0.3106
  • 25:$0.4245
  • 10:$0.4495
BSZ100N03MSGATMA1
DISTI # C1S322000306189		Infineon Technologies AGTrans MOSFET N-CH 30V 10A 8-Pin TSDSON EP T/R
RoHS: Compliant		10000
  • 5000:$0.2640
BSZ100N03MSGATMA1
DISTI # 2617466		Infineon Technologies AGMOSFET, N-CH, 30V, 40A, PG-TSDSON-8
RoHS: Compliant		2479
  • 1:$1.3600
  • 10:$1.1900
  • 100:$0.9150
  • 500:$0.6780
  • 1000:$0.5420
圖片 型號 描述
STTH802SF

Mfr.#: STTH802SF

OMO.#: OMO-STTH802SF

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STTH15RQ06G2-TR

Mfr.#: STTH15RQ06G2-TR

OMO.#: OMO-STTH15RQ06G2-TR

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IXTP100N15X4

Mfr.#: IXTP100N15X4

OMO.#: OMO-IXTP100N15X4

 MOSFET DISCMSFT NCH HIPERFET-QCLASS
STTH802SF

Mfr.#: STTH802SF

OMO.#: OMO-STTH802SF-STMICROELECTRONICS

 200V ULTRAFAST RECOVERY DIODE
可用性
庫存:
Available
訂購:
1990
輸入數量:
BSZ100N03MSGATMA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$0.70
US$0.70
10
US$0.58
US$5.82
100
US$0.38
US$37.50
1000
US$0.30
US$300.00
從...開始
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