CY7C2170KV18-400BZXC

Mfr. #:: CY7C2170KV18-400BZXC
製造商:: Cypress Semiconductor
描述:: SRAM 18MB (512Kx36) 1.8v 400MHz DDR II SRAM
生命週期:: 製造商新產品
數據表:: CY7C2170KV18-400BZXC 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:: CY7C2170KV18-400BZXC 更多信息 CY7C2170KV18-400BZXC Product Details

產品屬性
屬性值

製造商：: 賽普拉斯半導體

產品分類：: 靜態隨機存取存儲器

RoHS：: Y

內存大小：: 18 Mbit

組織：: 512 k x 36

最大時鐘頻率：: 400 MHz

接口類型：: 平行線

電源電壓 - 最大值：: 1.9 V

電源電壓 - 最小值：: 1.7 V

電源電流 - 最大值：: 640 mA

最低工作溫度：: 0 C

最高工作溫度：: + 70 C

安裝方式：: 貼片/貼片

包裝/案例：: FBGA-165

打包：: 托盤

內存類型：: DDR

系列：: CY7C2170KV18

類型：: 同步

品牌：: 賽普拉斯半導體

濕氣敏感：: 是的

產品類別：: 靜態隨機存取存儲器

出廠包裝數量：: 136

子類別：: 內存和數據存儲

Tags: CY7C2170K, CY7C217, CY7C21, CY7C2, CY7C, CY7

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CY7C2170KV18-400BZXC 評級和評論

M***h

Good quality, corresponds to the description.

2019-01-29

M***v

2 months shipping

2019-06-04

CY7C2170KV18-400BZXC 描述

***ical: SRAM Chip Sync Dual 1.8V 18M-bit 512K x 36 0.45ns 165-Pin FBGA Tray

***ress Semiconductor SCT: DDR-II+ CIO, 18 Mbit Density, BGA-165, RoHS

***ponent Stockers USA: 512K X 36 DDR SRAM 0.45 ns PBGA165

***or: DDR SRAM, 512KX36, 0.45NS PBGA16

***DA Technology Co., Ltd.: Product Description Demo for Development.

***i-Key: IC SRAM 18MBIT PARALLEL 165FBGA

***ure Electronics: SRAM Chip Sync Single 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin FBGA Tray

***ress Semiconductor SCT: DDR-II+ CIO, 18 Mbit Density, BGA-165, RoHS

***or: DDR SRAM, 512KX36, 0.45NS PBGA16

***i-Key: IC SRAM 18MBIT PARALLEL 165FBGA

***et: SRAM Chip Sync Single 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin FBGA Tray

***ress Semiconductor SCT: DDR-II+ CIO, 18 Mbit Density, BGA-165

***i-Key: IC SRAM 18MBIT PARALLEL 165FBGA

***ical: SRAM Chip Sync Dual 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin FBGA Tray

***ress Semiconductor SCT: Synchronous SRAM, QDR-II+, 18432 Kb Density, 400 MHz Frequency, BGA-165

***i-Key: IC SRAM 18MBIT PARALLEL 165FBGA

***et: SRAM Chip Sync Single 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin LFBGA

***i-Key: IC SRAM 18MBIT PARALLEL 165LFBGA

***et: SRAM Chip Sync Single 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin LFBGA

***I SCT: 1Mx18, 250Mhz, SRAM, FBGA-165

***i-Key: IC SRAM 18MBIT PARALLEL 165LFBGA

***enic: LFBGA-165(15x17) SRAM ROHS

CY7C2170KV18-400BZXC 更多信息

Synchronous SRAM: Cypress Synchronous SRAM offers true random memory access capabilities required for networking and other high performance applications. The Cypress Synchronous SRAM portfolio is available with a number of features designed to solve networking and high performance computing challenges. The portfolio includes standard synchronous SRAM, No Bus Latency SRAM, and QDR® SRAM with a variety of speeds, word widths, densities, and packages. Cypress Synchronous SRAM devices areideal for a wide range of applications including high-speed network switches & routers, communications infrastructure, test equipment, imaging & video and high performance computing.Learn More

Cypress QDR-II+ DDR-II+ Sync SRAM: Cypress' QDR-II+ is a high performance, dual-port SRAM memory. QDR-II+ SRAM offers a maximum speed of 550 MHz, densities up to 144 Mb, read latencies of 2 or 2.5 cycles, burst length of 2 or 4, and is available in an industry-standard 165-ball FBGA package. QDR-II+ products also offer optional programmable On-Die Termination (ODT). The QDR-II+ family also includes double data rate (DDR-II+) devices. DDR-II+ devices are similar to QDR-II+ devices except that all DDR devices have a burst length of 2 and a single data rate address bus. Additionally, DDR-II+ is available in SIO (separate I/O) or CIO (common I/O) options. SIO devices provide independent read and write ports, eliminating the data bus "turnaround" time found in CIO devices. CIO devices provide a single port for reads and writes, reducing the number of required data pin connections.Learn More

Market price

型號	製造商	描述	庫存	價格
CY7C2170KV18-400BZXC DISTI # CY7C2170KV18-400BZXC-ND	Cypress Semiconductor	IC SRAM 18M PARALLEL 165FBGA RoHS: Compliant Min Qty: 1 Container: Tray	95In Stock	272:$32.7783 136:$33.7082 50:$38.4868 25:$39.4684 10:$40.9150 1:$44.1200
CY7C2170KV18-400BZXC	Cypress Semiconductor	DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165 RoHS: Compliant	442	1000:$37.2200 500:$39.1800 100:$40.7900 25:$42.5400 1:$45.8100
CY7C2170KV18-400BZXC DISTI # 727-7C2170KV400BZXC	Cypress Semiconductor	SRAM 18MB (512Kx36) 1.8v 400MHz DDR II SRAM RoHS: Compliant	0	136:$32.0100

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