IXFR15N100Q3

Mfr. #:: IXFR15N100Q3
製造商:: Littelfuse
描述:: MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/10A
生命週期:: 製造商新產品
數據表:: IXFR15N100Q3 數據表
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HTML Datasheet:: IXFR15N100Q3 Datasheet IXFR15N100Q3 Datasheet (P4-P5)
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更多信息:: IXFR15N100Q3 更多信息

產品屬性
屬性值

製造商：: IXYS

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 通孔

包裝/案例：: TO-247-3

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 1 kV

Id - 連續漏極電流：: 10 A

Rds On - 漏源電阻：: 1.2 Ohms

Vgs - 柵源電壓：: 30 V

Qg - 門電荷：: 64 nC

Pd - 功耗：: 400 W

配置：: 單身的

商品名：: 高功率場效應晶體管

打包：: 管子

系列：: IXFR15N100

晶體管類型：: 1 N-Channel

品牌：: IXYS

產品類別：: MOSFET

上升時間：: 250 ns

出廠包裝數量：: 30

子類別：: MOSFET

單位重量：: 0.056438 oz

Tags: IXFR15N1, IXFR15N, IXFR15, IXFR1, IXFR, IXF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IXFR15N100Q3 描述

***ure Electronics: N-Channel 1 kV 10 A 64 nC Through Hole Q3-Class HiPerFET Mosfet - ISOPLUS-247

***trelec: MOSFET, Single - N-Channel, 1kV, 10A, 40W, ISOPLUS247

*** Electronics: MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/10A

***i-Key: MOSFET N-CH 1000V 10A ISOPLUS247

*** Services: CoC and 2-years warranty / RFQ for pricing

***icroelectronics: Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package

***ure Electronics: N-Channel 1200 V 520 mO 22 nC Silicon Carbide power Mosfet - HiP247

***ical: Trans MOSFET N-CH SiC 1.2KV 12A 3-Pin(3+Tab) HIP-247 Tube

***nell: MOSFET, N-CH, 1.2KV, 12A, 150W, HIP247; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 1.2kV; On Resistance Rds(on): 0.5ohm; Rds(on) Test Voltage Vgs: 20V; Threshold Voltage Vgs: 3.

***r Electronics: Power Field-Effect Transistor, 12A I(D), 1200V, 0.69ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET

***r Electronics: Power Field-Effect Transistor, 6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***icroelectronics: N-channel 1050 V, 1 Ohm typ., 6 A MDmesh K5 Power MOSFETs in TO-247 package

***ical: Trans MOSFET N-CH 1.05KV 6A 3-Pin(3+Tab) TO-247 Tube

***icroelectronics SCT: Power MOSFETs, 1050V, 6A, TO-247, Tube

***icroelectronics: N-channel 800 V, 0.19 Ohm typ., 19.5 A SuperMESH(TM) 5 Power MOSFET in TO-247 package

*** Source Electronics: Trans MOSFET N-CH 800V 19.5A 3-Pin(3+Tab) TO-247 Tube / MOSFET N-CH 800V 19.5A TO247

***ark: MOSFET, N-CH, 800V, 19.5A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:19.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 19.5A I(D), 800V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

***emi: N-Channel Power MOSFET, SUPERFET® II, 800 V, 58 A, 60 mΩ, TO-247

***r Electronics: Power Field-Effect Transistor, 58A I(D), 800V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

***el Electronic: Aluminum Electrolytic Capacitors 680μF Radial, Can - SMD ±20% Tape & Reel (TR) FT 0.413 10.50mm Surface Mount Automotive, High Temperature Reflow CAP ALUM 680UF 20% 35V SMD

***nell: MOSFET, N CHANNEL, 800V, 58A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 58A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 0.054ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4

***rchild Semiconductor: SuperFET®II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology istailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

***ure Electronics: SCT3080KL Series 1200 V 31 A 104 mOhm N-Channel SiC Power Mosfet - TO-247N

***ical: Trans MOSFET N-CH SiC 1.2KV 31A 3-Pin(3+Tab) TO-247N Tube

***ment14 APAC: MOSFET, N-CH, 31A, 1.2KV, TO-247N; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Source Voltage Vds:1.2kV; On Resistance

***roFlash: Power Field-Effect Transistor, 31A I(D), 1200V, 0.104ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247

***nell: MOSFET, N-CH, 31A, 1.2KV, TO-247N; Transistor Polarity: N Channel; Continuous Drain Current Id: 31A; Drain Source Voltage Vds: 1.2kV; On Resistance Rds(on): 0.08ohm; Rds(on) Test Voltage Vgs: 18V; Threshold Voltage Vgs: 5.6V; Power Dissipation Pd: 165W; Transistor Case Style: TO-247N; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)

IXFR15N100Q3 更多信息

HiPerFET Power MOSFETs - EXPANSION: IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances.Learn more.These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.View all HiPerFET MOSFETs.

Electrical Vehicle DC Fast Chargers: DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs: IXYS Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

Market price

型號	製造商	描述	庫存	價格
IXFR15N100Q3 DISTI # IXFR15N100Q3-ND	IXYS Corporation	MOSFET N-CH 1000V 10A ISOPLUS247 RoHS: Compliant Min Qty: 1 Container: Tube	56In Stock	120:$13.1648 30:$14.3263 1:$17.0400
IXFR15N100Q3 DISTI # 747-IXFR15N100Q3	IXYS Corporation	MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/10A RoHS: Compliant	26	1:$17.8100 10:$16.1900 25:$14.9700 50:$13.7800 100:$13.4400 250:$12.3200 500:$11.1800
IXFR15N100Q3 DISTI # 8011430P	IXYS Corporation	MOSFET 1000V 10A Q3 HIPERFET ISOPLUS247, TU	4	5:£12.7500 10:£12.1800 25:£11.7600

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