SIDR668DP-T1-GE3

Mfr. #:: SIDR668DP-T1-GE3
製造商:: Vishay / Siliconix
描述:: MOSFET 100V Vds 20V Vgs PowerPAK SO-8DC
生命週期:: 製造商新產品
數據表:: SIDR668DP-T1-GE3 數據表
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HTML Datasheet:: SIDR668DP-T1-GE3 Datasheet SIDR668DP-T1-GE3 Datasheet (P4-P6)SIDR668DP-T1-GE3 Datasheet (P7-P8)
ECAD Model:
更多信息:: SIDR668DP-T1-GE3 更多信息

產品屬性
屬性值

製造商：: 威世

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: PowerPAK-SO-8DC-8

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 100 V

Id - 連續漏極電流：: 95 A

Rds On - 漏源電阻：: 5.05 mOhms

Vgs th - 柵源閾值電壓：: 2 V

Vgs - 柵源電壓：: 7.5 V

Qg - 門電荷：: 72 nC

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 125 W

配置：: 單身的

頻道模式：: 增強

商品名：: 溝槽場效應晶體管

打包：: 捲軸

系列：: 標準識別碼

晶體管類型：: 1 N-Channel

品牌：: 威世 / Siliconix

秋季時間：: 28 ns

產品類別：: MOSFET

上升時間：: 25 ns

出廠包裝數量：: 3000

子類別：: MOSFET

典型關斷延遲時間：: 38 ns

典型的開啟延遲時間：: 22 ns

Tags: SIDR6, SIDR, SID

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIDR668DP-T1-GE3 更多信息

TrenchFET® Gen IV Top-Side Double Cooling MOSFETs: Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET Gen IV MOSFETs: Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.

Market price

型號	製造商	描述	庫存	價格
SIDR668DP-T1-GE3 DISTI # 29499188	Vishay Intertechnologies	N-Channel 100 V (D-S) MOSFET	3000	3000:$1.4091
SIDR668DP-T1-GE3 DISTI # SIDR668DP-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 100V RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5839In Stock	1000:$1.4819 500:$1.7885 100:$2.1769 10:$2.7080 1:$3.0100
SIDR668DP-T1-GE3 DISTI # SIDR668DP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 100V RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5839In Stock	1000:$1.4819 500:$1.7885 100:$2.1769 10:$2.7080 1:$3.0100
SIDR668DP-T1-GE3 DISTI # SIDR668DP-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 100V RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	6000:$1.3230 3000:$1.3395
SIDR668DP-T1-GE3 DISTI # 59AC7340	Vishay Intertechnologies	N-CHANNEL 100-V (D-S) MOSFET	0	10000:$1.1900 6000:$1.2300 4000:$1.2800 2000:$1.4200 1000:$1.5000 1:$1.5900
SIDR668DP-T1-GE3 DISTI # 78AC6505	Vishay Intertechnologies	MOSFET, N-CH, 100V, 95A, 150DEG C, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:95A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.4V,Power RoHS Compliant: Yes	0	500:$1.6700 250:$1.7900 100:$1.9100 50:$2.0900 25:$2.2700 10:$2.4500 1:$2.9600
SIDR668DP-T1-GE3 DISTI # 78-SIDR668DP-T1-GE3	Vishay Intertechnologies	MOSFET 100V Vds 20V Vgs PowerPAK SO-8DC RoHS: Compliant	9739	1:$2.9300 10:$2.4300 100:$1.8900 500:$1.6500 1000:$1.3700 3000:$1.2700 6000:$1.2200
SIDR668DP-T1-GE3 DISTI # 2932900	Vishay Intertechnologies	MOSFET, N-CH, 100V, 95A, 150DEG C, 125W	6000	500:£1.2100 250:£1.3000 100:£1.3800 10:£1.7800 1:£2.4200
SIDR668DP-T1-GE3 DISTI # 2932900	Vishay Intertechnologies	MOSFET, N-CH, 100V, 95A, 150DEG C, 125W RoHS: Compliant	6000	1000:$2.5300 500:$2.6800 250:$2.8400 100:$3.1000 10:$3.5700 1:$4.1000

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