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IPP60R099C7XKSA1

IPP60R099C7XKSA1
Mfr. #:
IPP60R099C7XKSA1
製造商:
Infineon Technologies
描述:
MOSFET HIGH POWER_NEW
生命週期:
製造商新產品
數據表:
IPP60R099C7XKSA1 數據表
交貨:
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ECAD Model:
更多信息:
IPP60R099C7XKSA1 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-220-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
600 V
Id - 連續漏極電流：
22 A
Rds On - 漏源電阻：
85 mOhms
Vgs th - 柵源閾值電壓：
3 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
42 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
110 W
配置：
單身的
頻道模式：
增強
商品名：
酷摩
打包：
管子
高度：
15.65 mm
長度：
10 mm
系列：
CoolMOS C7
晶體管類型：
1 N-Channel
寬度：
4.4 mm
品牌：
英飛凌科技
秋季時間：
4.5 ns
產品類別：
MOSFET
上升時間：
8 ns
出廠包裝數量：
500
子類別：
MOSFET
典型關斷延遲時間：
54 ns
典型的開啟延遲時間：
11.8 ns
第 # 部分別名：
IPP60R099C7 SP001298000
單位重量：
0.211644 oz
Tags
IPP60R099C, IPP60R099, IPP60R09, IPP60R0, IPP60R, IPP60, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 99 mOhm 42 nC CoolMOS™ Power Mosfet - TO-220-3
***ark
Mosfet, N-Ch, 600V, 22A, 150Deg C, 110W; Transistor Polarity:n Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:22A; On Resistance Rds(On):0.085Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***ineon
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
型號 製造商 描述 庫存 價格
IPP60R099C7XKSA1
DISTI # V99:2348_06377510		Infineon Technologies AGTrans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		1500
  • 500:$3.1380
  • 250:$3.5250
  • 100:$3.7530
  • 10:$4.3660
  • 1:$5.7035
IPP60R099C7XKSA1
DISTI # V36:1790_06377510		Infineon Technologies AGTrans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		0
  • 500000:$2.3090
  • 250000:$2.3140
  • 50000:$2.9460
  • 5000:$4.2350
  • 500:$4.4600
IPP60R099C7XKSA1
DISTI # IPP60R099C7XKSA1-ND		Infineon Technologies AGMOSFET N-CH 600V 22A TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube		482In Stock
  • 2500:$2.7538
  • 500:$3.4370
  • 100:$4.0375
  • 25:$4.6588
  • 10:$4.9280
  • 1:$5.4900
IPP60R099C7XKSA1
DISTI # 33725814		Infineon Technologies AGTrans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		1500
  • 3:$5.7035
IPP60R099C7XKSA1
DISTI # 33925793		Infineon Technologies AGTrans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		500
  • 500:$4.8594
IPP60R099C7XKSA1
DISTI # IPP60R099C7XKSA1		Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Rail/Tube (Alt: IPP60R099C7XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 3000:$2.4900
  • 5000:$2.4900
  • 2000:$2.5900
  • 1000:$2.6900
  • 500:$2.7900
IPP60R099C7XKSA1
DISTI # IPP60R099C7		Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: IPP60R099C7)
RoHS: Compliant
Min Qty: 500		Asia - 0
  • 25000:$2.4961
  • 12500:$2.5281
  • 5000:$2.5609
  • 2500:$2.5946
  • 1500:$2.6647
  • 1000:$2.7388
  • 500:$2.8170
IPP60R099C7XKSA1
DISTI # SP001298000		Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: SP001298000)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€2.0900
  • 500:€2.2900
  • 100:€2.3900
  • 50:€2.4900
  • 25:€2.5900
  • 10:€2.6900
  • 1:€2.8900
IPP60R099C7XKSA1
DISTI # 13AC9081		Infineon Technologies AGMOSFET, N-CH, 600V, 22A, TO-220-3,Transistor Polarity:N Channel,Continuous Drain Current Id:22A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.085ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes0
  • 500:$3.3000
  • 250:$3.6800
  • 100:$3.8800
  • 50:$4.0800
  • 25:$4.2800
  • 10:$4.4700
  • 1:$5.2700
IPP60R099C7XKSA1Infineon Technologies AGSingle N-Channel 600 V 99 mOhm 42 nC CoolMOS Power Mosfet - TO-220-3
RoHS: Compliant		500Tube
  • 5:$4.9600
  • 25:$4.0200
  • 50:$3.8400
  • 100:$3.6700
  • 250:$3.4600
IPP60R099C7XKSA1
DISTI # 726-IPP60R099C7XKSA1		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		479
  • 1:$5.2200
  • 10:$4.4300
  • 100:$3.8400
  • 250:$3.6400
  • 500:$3.2700
IPP60R099C7XKSA1
DISTI # 2726067		Infineon Technologies AGMOSFET, N-CH, 600V, 22A, TO-220-3
RoHS: Compliant		0
  • 2500:$4.1700
  • 500:$5.1800
  • 100:$6.0900
  • 25:$7.0300
  • 10:$7.4300
  • 1:$8.2700
IPP60R099C7XKSA1
DISTI # 2726067		Infineon Technologies AGMOSFET, N-CH, 600V, 22A, TO-220-31490
  • 500:£2.5200
  • 250:£2.8100
  • 100:£2.9600
  • 10:£3.4100
  • 1:£4.4600
IPP60R099C7XKSA1
DISTI # XSFP00000050344		Infineon Technologies AG 
RoHS: Compliant		1000 in Stock0 on Order
  • 1000:$6.6100
  • 500:$7.0900
IPP60R099C7XKSA1
DISTI # IPP60R099C7		Infineon Technologies AGN-Ch 600V 22A 110W 0,099R TO220
RoHS: Compliant		0
  • 1:€6.8100
  • 10:€3.8100
  • 50:€2.8100
  • 100:€2.5800
圖片 型號 描述
FCP099N65S3

Mfr.#: FCP099N65S3

OMO.#: OMO-FCP099N65S3

 MOSFET SuperFET3 650V 99 mOhm,TO220 PKG
UCC28951QPWRQ1

Mfr.#: UCC28951QPWRQ1

OMO.#: OMO-UCC28951QPWRQ1

 Switching Controllers GREEN PHASE-SHIFTED FULL-BRIDGE CONTROLL
LM5161QPWPRQ1

Mfr.#: LM5161QPWPRQ1

OMO.#: OMO-LM5161QPWPRQ1

 Switching Voltage Regulators LM5161-Q1
BBB01-SC-505

Mfr.#: BBB01-SC-505

OMO.#: OMO-BBB01-SC-505

 Single Board Computers Beaglebone Black Rev C
LM5161QPWPRQ1

Mfr.#: LM5161QPWPRQ1

OMO.#: OMO-LM5161QPWPRQ1-TEXAS-INSTRUMENTS

 IC REG BCK FLYBCK ADJ 14HTSSOP
GT06-111-049

Mfr.#: GT06-111-049

OMO.#: OMO-GT06-111-049-1190

 Pulse Transformers Gate Drive Transforme
FCP099N65S3

Mfr.#: FCP099N65S3

OMO.#: OMO-FCP099N65S3-ON-SEMICONDUCTOR

 MOSFET N-CH 650V 30A TO220-3
TG111-MSCE13LF

Mfr.#: TG111-MSCE13LF

OMO.#: OMO-TG111-MSCE13LF-1190

 (Alt: TG111-MSCE13LF)
BBB01-SC-505

Mfr.#: BBB01-SC-505

OMO.#: OMO-BBB01-SC-505-GHI-ELECTRONICS

 Beagle Bone Black
UCC28951QPWRQ1

Mfr.#: UCC28951QPWRQ1

OMO.#: OMO-UCC28951QPWRQ1-TEXAS-INSTRUMENTS

 IC REG CTRLR FULL-BRIDGE 24TSSOP
可用性
庫存:
472
訂購:
2455
輸入數量:
IPP60R099C7XKSA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$5.22
US$5.22
10
US$4.43
US$44.30
100
US$3.84
US$384.00
250
US$3.64
US$910.00
500
US$3.27
US$1 635.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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